| Two-dimensional SnS: A phosphorene analogue with strong in-plane electronic anisotropy Z Tian, C Guo, M Zhao, R Li, J Xue ACS nano 11 (2), 2219-2226, 2017 | 288 | 2017 |
| Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se C Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, H Peng, Y Sun, X Xu, ... Science advances 4 (9), eaat8355, 2018 | 214 | 2018 |
| Discovery of Superconductivity in 2M WS2 with Possible Topological Surface States Y Fang, J Pan, D Zhang, D Wang, HT Hirose, T Terashima, S Uji, Y Yuan, ... Advanced Materials 31 (30), 1901942, 2019 | 143 | 2019 |
| Exchange bias in van der Waals CrCl3/Fe3GeTe2 heterostructures R Zhu, W Zhang, W Shen, PKJ Wong, Q Wang, Q Liang, Z Tian, Y Zhai, ... Nano Letters, 2020 | 107 | 2020 |
| Field-effect transistors of high-mobility few-layer SnSe2 C Guo, Z Tian, Y Xiao, Q Mi, J Xue Applied Physics Letters 109 (20), 203104, 2016 | 98 | 2016 |
| Interlayer decoupling in 30° twisted bilayer graphene quasicrystal B Deng, B Wang, N Li, R Li, Y Wang, J Tang, Q Fu, Z Tian, P Gao, J Xue, ... ACS nano 14 (2), 1656-1664, 2020 | 81 | 2020 |
| Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response M Zhao, W Xia, Y Wang, M Luo, Z Tian, Y Guo, W Hu, J Xue ACS nano 13 (9), 10705-10710, 2019 | 56 | 2019 |
| Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe Z Tian, M Zhao, X Xue, W Xia, C Guo, Y Guo, Y Feng, J Xue ACS applied materials & interfaces 10 (15), 12831-12838, 2018 | 45 | 2018 |
| Photoemission study of the electronic structure of valence band convergent SnSe CW Wang, YYY Xia, Z Tian, J Jiang, BH Li, ST Cui, HF Yang, AJ Liang, ... Physical Review B 96 (16), 165118, 2017 | 34 | 2017 |
| Isotropic charge screening of anisotropic black phosphorus revealed by potassium adatoms Z Tian, Y Gan, T Zhang, B Wang, H Ji, Y Feng, J Xue Physical Review B 100 (8), 085440, 2019 | 12 | 2019 |
