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Fangqing Xie
Fangqing Xie
在 kit.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Gate-controlled atomic quantum switch
FQ Xie, L Nittler, C Obermair, T Schimmel
Physical review letters 93 (12), 128303, 2004
1582004
Synthesis of SiC nanofibers by annealing carbon nanotubes covered with Si
JW Liu, DY Zhong, FQ Xie, M Sun, EG Wang, WX Liu
Chemical physics letters 348 (5-6), 357-360, 2001
812001
Independently switchable atomic quantum transistors by reversible contact reconstruction
FQ Xie, R Maul, A Augenstein, C Obermair, EB Starikov, G Schön, ...
Nano letters 8 (12), 4493-4497, 2008
552008
Multilevel atomic-scale transistors based on metallic quantum point contacts
F Xie, R Maul, C Obermair, W Wenzel, G Schön, T Schimmel
Advanced Materials 22 (18), 2033, 2010
412010
Preselectable integer quantum conductance of electrochemically fabricated silver point contacts
FQ Xie, R Maul, S Brendelberger, C Obermair, EB Starikov, W Wenzel, ...
Applied Physics Letters 93 (4), 2008
382008
Conductance of atomic-scale Pb contacts in an electrochemical environment
FQ Xie, F Hüser, F Pauly, C Obermair, G Schön, T Schimmel
Physical Review B—Condensed Matter and Materials Physics 82 (7), 075417, 2010
312010
Switching an electrical current with atoms: the reproducible operation of a multi-atom relay
FQ Xie, C Obermair, T Schimmel
Solid state communications 132 (7), 437-442, 2004
302004
Exchange processes in the contact formation of Pb electrodes
X Lin, A Dasgupta, F Xie, T Schimmel, F Evers, A Groß
Electrochimica Acta 140, 505-510, 2014
252014
The Single-Atom Transistor: perspectives for quantum electronics on the atomic-scale
C Obermair, FQ Xie, T Schimmel
Europhysics News 41 (4), 25-28, 2010
252010
Quasi‐Solid‐State Single‐Atom Transistors
F Xie, A Peukert, T Bender, C Obermair, F Wertz, P Schmieder, ...
Advanced Materials 30 (31), 1801225, 2018
202018
Memory effects in electrochemically gated metallic point contacts
R Maul, FQ Xie, C Obermair, G Schön, T Schimmel, W Wenzel
Applied Physics Letters 100 (20), 2012
132012
Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands
F Xie, P Von Blanckenhagen, J Wu, JW Liu, QZ Zhang, YC Chen, ...
Applied surface science 181 (1-2), 139-144, 2001
132001
Observation of harmonic current oscillations on partially oxidized Si (111) surfaces by scanning tunneling microscopy
F Xie, P von Blanckenhagen
Applied physics letters 75 (20), 3144-3146, 1999
121999
Electronic states of the FO radical. An MRSDCI study
FQ Xie, YX Xia, MB Huang
Chemical physics letters 203 (5-6), 598-602, 1993
121993
Copper atomic-scale transistors
F Xie, MN Kavalenka, M Röger, D Albrecht, H Hölscher, J Leuthold, ...
Beilstein journal of nanotechnology 8 (1), 530-538, 2017
112017
Multiplicity of atomic reconfigurations in an electrochemical Pb single-atom transistor
FQ Xie, XH Lin, A Gross, F Evers, F Pauly, T Schimmel
Physical Review B 95 (19), 195415, 2017
102017
Revealing thermal effects in the electronic transport through irradiated atomic metal point contacts
B Kopp, Z Yi, D Benner, FQ Xie, C Obermair, T Schimmel, J Boneberg, ...
Beilstein Journal of Nanotechnology 3 (1), 703-711, 2012
92012
Gate controlled atomic switch
T Schimmel, F Xie, C Obermair
US Patent 7,960,217, 2011
82011
Comparative study of harmonic oscillations of tunneling current on partially oxidized Si (100) and Si (111) surfaces by scanning tunneling microscopy and spectroscopy
F Xie, M Sun, P von Blanckenhagen
Surface science 454, 1031-1037, 2000
82000
Time-dependent oscillations of tunneling current on partially oxidized Si (111) surfaces
F Xie, P von Blanckenhagen
Applied Physics A 72, S217-S221, 2001
72001
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