| Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing Q Gao, D Saxena, F Wang, L Fu, S Mokkapati, Y Guo, L Li, J Wong-Leung, ... Nano letters 14 (9), 5206-5211, 2014 | 251 | 2014 |
| Mode profiling of semiconductor nanowire lasers D Saxena, F Wang, Q Gao, S Mokkapati, HH Tan, C Jagadish Nano Letters 15 (8), 5342-5348, 2015 | 97 | 2015 |
| Efficiency enhancement of axial junction InP single nanowire solar cells by dielectric coating Z Zhong, Z Li, Q Gao, Z Li, K Peng, L Li, S Mokkapati, K Vora, J Wu, ... Nano Energy 28, 106-114, 2016 | 81 | 2016 |
| Simultaneous selective-area and vapor–liquid–solid growth of InP nanowire arrays Q Gao, VG Dubrovskii, P Caroff, J Wong-Leung, L Li, Y Guo, L Fu, HH Tan, ... Nano Letters 16 (7), 4361-4367, 2016 | 78 | 2016 |
| Engineering highly interconnected neuronal networks on nanowire scaffolds V Gautam, S Naureen, N Shahid, Q Gao, Y Wang, D Nisbet, C Jagadish, ... Nano letters 17 (6), 3369-3375, 2017 | 74 | 2017 |
| Integration of semiconductor nanowire lasers with polymeric waveguide devices on a mechanically flexible substrate D Jevtics, A Hurtado, B Guilhabert, J McPhillimy, G Cantarella, Q Gao, ... Nano Letters 17 (10), 5990-5994, 2017 | 61 | 2017 |
| Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication B Guilhabert, A Hurtado, D Jevtics, Q Gao, HH Tan, C Jagadish, ... ACS nano 10 (4), 3951-3958, 2016 | 60 | 2016 |
| Broadband phase-sensitive single InP nanowire photoconductive terahertz detectors K Peng, P Parkinson, JL Boland, Q Gao, YC Wenas, CL Davies, Z Li, L Fu, ... Nano Letters 16 (8), 4925-4931, 2016 | 59 | 2016 |
| Spatially resolved doping concentration and nonradiative lifetime profiles in single Si-doped InP nanowires using photoluminescence mapping F Wang, Q Gao, K Peng, Z Li, Z Li, Y Guo, L Fu, LM Smith, HH Tan, ... Nano letters 15 (5), 3017-3023, 2015 | 53 | 2015 |
| Long-lived hot carriers in III–V nanowires D Tedeschi, M De Luca, HA Fonseka, Q Gao, F Mura, HH Tan, S Rubini, ... Nano Letters 16 (5), 3085-3093, 2016 | 50 | 2016 |
| Shape engineering of InP nanostructures by selective area epitaxy N Wang, X Yuan, X Zhang, Q Gao, B Zhao, L Li, M Lockrey, HH Tan, ... ACS nano 13 (6), 7261-7269, 2019 | 49 | 2019 |
| Vertically emitting indium phosphide nanowire lasers WZ Xu, FF Ren, D Jevtics, A Hurtado, L Li, Q Gao, J Ye, F Wang, ... Nano letters 18 (6), 3414-3420, 2018 | 39 | 2018 |
| Radial growth evolution of InGaAs/InP multi-quantum-well nanowires grown by selective-area metal organic vapor-phase epitaxy I Yang, X Zhang, C Zheng, Q Gao, Z Li, L Li, MN Lockrey, H Nguyen, ... ACS nano 12 (10), 10374-10382, 2018 | 33 | 2018 |
| Single n+-i-n+ InP nanowires for highly sensitive terahertz detection K Peng, P Parkinson, Q Gao, JL Boland, Z Li, F Wang, S Mokkapati, L Fu, ... Nanotechnology 28 (12), 125202, 2017 | 33 | 2017 |
| Axial p‐n junction design and characterization for InP nanowire array solar cells Q Gao, Z Li, L Li, K Vora, Z Li, A Alabadla, F Wang, Y Guo, K Peng, ... Progress in Photovoltaics: Research and Applications 27 (3), 237-244, 2019 | 29 | 2019 |
| Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance Z Li, I Yang, L Li, Q Gao, JS Chong, Z Li, MN Lockrey, HH Tan, ... Progress in Natural Science: Materials International 28 (2), 178-182, 2018 | 23 | 2018 |
| In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse Z Li, X Yuan, Q Gao, I Yang, L Li, P Caroff, M Allen, J Allen, HH Tan, ... Nanotechnology 31 (24), 244002, 2020 | 21 | 2020 |
| Value and anisotropy of the electron and hole mass in pure wurtzite InP nanowires D Tedeschi, M De Luca, A Granados del Aguila, Q Gao, G Ambrosio, ... Nano Letters 16 (10), 6213-6221, 2016 | 17 | 2016 |
| Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires F Li, X Xie, Q Gao, L Tan, Y Zhou, Q Yang, J Ma, L Fu, HH Tan, ... Nanotechnology 29 (22), 225703, 2018 | 9 | 2018 |
