| Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling M Poljak, V Jovanovic, D Grgec, T Suligoj IEEE transactions on electron devices 59 (6), 1636-1643, 2012 | 94 | 2012 |
| Improving bulk FinFET DC performance in comparison to SOI FinFET M Poljak, V Jovanović, T Suligoj Microelectronic Engineering 86 (10), 2078-2085, 2009 | 60 | 2009 |
| Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects M Poljak, T Suligoj Nano Research 9 (6), 1723-1734, 2016 | 48 | 2016 |
| Influence of edge defects, vacancies, and potential fluctuations on transport properties of extremely scaled graphene nanoribbons M Poljak, EB Song, M Wang, T Suligoj, KL Wang IEEE transactions on electron devices 59 (12), 3231-3238, 2012 | 46 | 2012 |
| SOI vs. bulk FinFET: body doping and corner effects influence on device characteristics M Poljak, V Jovanovic, T Suligoj MELECON 2008-The 14th IEEE Mediterranean Electrotechnical Conference, 425-430, 2008 | 36 | 2008 |
| Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials M Poljak IEEE Electron Device Letters 41 (1), 151-154, 2020 | 33 | 2020 |
| Ultra-high aspect-ratio FinFET technology V Jovanović, T Suligoj, M Poljak, Y Civale, LK Nanver Solid-state electronics 54 (9), 870-876, 2010 | 32 | 2010 |
| Suppression of corner effects in wide-channel triple-gate bulk FinFETs M Poljak, V Jovanović, T Suligoj Microelectronic Engineering 87 (2), 192-199, 2010 | 30 | 2010 |
| Influence of substrate type and quality on carrier mobility in graphene nanoribbons M Poljak, T Suligoj, KL Wang Journal of Applied Physics 114 (5), 053701, 2013 | 28 | 2013 |
| Minimum Contact Resistance in Monoelemental 2D Material Nanodevices with Edge-Contacts M Poljak, M Matić, A Zeljko IEEE Electron Device Letters 42 (8), 1240-1243, 2021 | 26 | 2021 |
| A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors I Berdalovic, M Poljak, T Suligoj Journal of Applied Physics 129 (6), 064303, 2021 | 21 | 2021 |
| Technological constrains of bulk FinFET structure in comparison with SOI FinFET M Poljak, V Jovanovic, T Suligoj 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 21 | 2007 |
| Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts M Poljak, M Matić Materials 14 (13), 3670, 2021 | 20 | 2021 |
| Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons M Poljak, KL Wang, T Suligoj Solid-state electronics, (accepted), 2014 | 18 | 2014 |
| Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications M Poljak, V Jovanović, T Suligoj Solid-state electronics 65, 130-138, 2011 | 17 | 2011 |
| Accelerating simulation of nanodevices based on 2D materials by hybrid CPU-GPU parallel computing M Poljak, M Glavan, S Kuzmić 2019 42nd International Convention on Information and Communication …, 2019 | 16 | 2019 |
| Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects M Poljak, T Suligoj IEEE Transactions on Electron Devices 63 (2), 537-543, 2015 | 16 | 2015 |
| Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETs M Poljak IEEE Transactions on Electron Devices 67 (11), 4705-4708, 2020 | 15 | 2020 |
| The potential of phosphorene nanoribbons as channel material for ultrascaled transistors M Poljak, T Suligoj IEEE Transactions on Electron Devices 65 (1), 290-294, 2017 | 15 | 2017 |
| The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs S Krivec, M Poljak, T Suligoj IEEE Transactions on Electron Devices 65 (7), 2784-2789, 2018 | 14 | 2018 |
Tomislav SuligojProfessor of Electronics, University of Zagreb在 fer.hr 的电子邮件经过验证
