| Demonstration of Highly Robust 5 nm HZO Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality YK Liang, JS Wu, CY Teng, HL Ko, QH Luc, CJ Su, EY Chang, CH Lin IEEE Electron Device Letters 42 (9), 1299-1302, 2021 | 35 | 2021 |
| ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability YK Liang, WL Li, YJ Wang, LC Peng, CC Lu, HY Huang, SH Yeong, ... IEEE Electron Device Letters 43 (9), 1451-1454, 2022 | 24 | 2022 |
| Electrical characteristics of ultrathin InZnO thin-film transistors prepared by atomic layer deposition YK Liang, JW Lin, LC Peng, YM Hua, TT Chou, CC Kei, CC Lu, HY Huang, ... IEEE Transactions on Electron Devices 70 (3), 1067-1072, 2023 | 14 | 2023 |
| Hf-based and Zr-based charge trapping layer engineering for E-mode GaN MIS-HEMT using ferroelectric charge trap gate stack JS Wu, CC Lee, CH Wu, CJ Huang, YK Liang, YC Weng, EY Chang IEEE Journal of the Electron Devices Society 10, 525-531, 2022 | 10 | 2022 |
| Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition YK Liang, YS Huang, LC Peng, TY Yang, BF Young, CC Lu, SH Yeong, ... IEEE Transactions on Nanotechnology 21, 328-331, 2022 | 8 | 2022 |
| Characterization of ferroelectric characteristics for hafnium zirconium oxide capacitors with refractory electrodes YK Liang, JW Lin, YS Huang, WC Lin, BF Young, YC Shih, CC Lu, ... ECS Journal of Solid State Science and Technology 11 (5), 053012, 2022 | 8 | 2022 |
| Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO Interfacial Layer YK Liang, WL Li, YL Lin, DR Hsieh, TY Yang, TT Chou, CC Kei, ... IEEE Transactions on Electron Devices, 2024 | 7 | 2024 |
| Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT JS Wu, PH Liao, SJ Chang, TY Yang, CY Teng, YK Liang, D Panda, ... 2022 IEEE International Electron Devices Meeting (IEDM), 847-850, 2022 | 7 | 2022 |
| Highly stable short channel ultrathin atomic layer deposited indium zinc oxide thin film transistors with excellent electrical characteristics YK Liang, WL Li, JY Zheng, YL Lin, YC Lu, CH Chiu, DR Hsieh, TT Chou, ... IEEE Electron Device Letters, 2023 | 6 | 2023 |
| Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High … YK Liang, JY Zheng, YL Lin, WL Li, YC Lu, DR Hsieh, LC Peng, TT Chou, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 6 | 2023 |
| A normally-off GaN MIS-HEMT fabricated using atomic layer etching to improve device performance uniformity for high power applications TY Yang, HY Huang, YK Liang, JS Wu, MY Kuo, KP Chang, HT Hsu, ... IEEE Electron Device Letters 43 (10), 1629-1632, 2022 | 5 | 2022 |
| Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZn1-xO Channel Thin-Film Transistors YK Liang, JY Zheng, JW Lin, YM Hua, TT Chou, CC Lu, HY Huang, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 3 | 2023 |
| InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window ML Kao, YK Liang, Y Lin, YC Weng, CF Dee, PT Liu, CT Lee, EY Chang IEEE Electron Device Letters 43 (12), 2105-2108, 2022 | 2 | 2022 |
| Demonstration of Wake-up Free 6 nm Ultrathin ZrO2-HfO2 Superlattice Ferroelectric Capacitors with High Endurance against Fatigue YK Liang, Z Liu, Z Cai, X Han, HY Huang, YM Lin, EY Chang, CH Lin, ... IEEE Electron Device Letters, 2024 | 1 | 2024 |
| Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions JW Lin, YK Liang, Y Chen, Z Li, TC Chiang, PT Liu, EY Chang, CH Lin ECS Transactions 104 (3), 31, 2021 | 1 | 2021 |
| (Invited) Polarization Stability Improvement for Hf0.5Zr0.5O2-Based Ferroelectric Capacitor YK Liang, LC Peng, CH Chiu, YY Hsiao, CH Lin Electrochemical Society Meeting Abstracts 245, 1304-1304, 2024 | | 2024 |
| Investigation of In-Sn-Zn Composition on the Characterization of Submicron Channel Length Ultra-Thin Atomic Layer Deposited InSnZnO Channel Transistors YK Liang, LC Peng, YL Lin, JY Zheng, DR Hsieh, TT Chou, HY Huang, ... 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 63-64, 2024 | | 2024 |
| Investigation of HfO2 and ZrO2 Nanolamination Thickness on Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance DR Hsieh, ZY Hong, WJ Yeh, JC Ni, HE Luo, YK Liang, SL Hsieh, ... 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 31-32, 2024 | | 2024 |
| The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs TY Yang, SR Wu, JS Wu, YK Liang, MY Kuo, H Iwai, EY Chang IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel YK Liang, JY Zheng, YL Lin, YC Lu, DR Hsieh, TT Chou, CC Kei, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
