| High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 221107, 2017 | 253 | 2017 |
| Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector AS Pratiyush, S Krishnamoorthy, S Kumar, Z Xia, R Muralidharan, ... Japanese Journal of Applied Physics 57 (6), 060313, 2018 | 80 | 2018 |
| Advances in Ga2O3 solar-blind UV photodetectors AS Pratiyush, S Krishnamoorthy, R Muralidharan, S Rajan, DN Nath Gallium Oxide, 369-399, 2019 | 67 | 2019 |
| MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ... IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018 | 62 | 2018 |
| Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics P Jaiswal, U Ul Muazzam, AS Pratiyush, N Mohan, S Raghavan, ... Applied Physics Letters 112 (2), 021105, 2018 | 48 | 2018 |
| Optical Float-Zone Grown Bulk b-Ga2O3-based Linear MSM Array of UV-C Photodetectors AS Pratiyush, UU Muazzam, S Kumar, P Vijayakumar, S Ganesamoorthy, ... IEEE Photonics Technology Letters, 2019 | 45 | 2019 |
| UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107 S Kumar, AS Pratiyush, SB Dolmanan, S Tripathy, R Muralidharan, ... Applied Physics Letters 111 (25), 251103, 2017 | 44 | 2017 |
| A performance comparison between\b {eta}-Ga2O3 and GaN High Electron Mobility Transistors S Kumar, AS Pratiyush, R Muralidharan, DN Nath arXiv preprint arXiv:1802.02313, 2018 | 37* | 2018 |
| Investigation of Ta2O5 as an alternative high\k {appa} dielectric for InAlN/GaN MOS HEMT on Si H Kumar, S Vura, AS Pratiyush, VS Charan, SB Dolmanan, S Tripathy, ... arXiv preprint arXiv:1806.03291, 2018 | 22* | 2018 |
| High-responsivity (In0. 26Ga0. 74) 2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition UU Muazzam, MS Raghavan, AS Pratiyush, R Muralidharan, S Raghavan, ... Journal of Alloys and Compounds 828, 154337, 2020 | 17 | 2020 |
| Optically coupled electrically isolated, monolithically integrated switch using AlxGa1-xN/GaN high electron mobility transistor structures on Si (111) S Kumar, AS Pratiyush, SB Dolmanan, HR Tan, S Tripathy, ... ACS Applied Electronic Materials, 2019 | 8 | 2019 |
| Extraction of Output Conductance Parameters From Simple DC IV Measurements for a Compact Model S Turuvekere, AS Pratiyush, S Srihari, A Sundaram 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | | 2022 |
| Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si DNN Sandeep Kumar, Himanshu Kumar, Sandeep Vura, Anamika Singh Pratiyush ... IEEE Transactions on Electron Devices 66 (3), 1-6, 2019 | | 2019 |
Digbijoy NathAssociate Professor at Indian Institute of Science在 iisc.ac.in 的电子邮件经过验证
