| ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors L Lee, J Hwang, JW Jung, J Kim, HI Lee, S Heo, M Yoon, S Choi, ... Nature communications 10 (1), 1998, 2019 | 92 | 2019 |
| Effect of oxygen content on current stress-induced instability in bottom-gate amorphous InGaZnO thin-film transistors S Choi, JY Kim, H Kang, D Ko, J Rhee, SJ Choi, DM Kim, DH Kim Materials 12 (19), 3149, 2019 | 55 | 2019 |
| Systematic decomposition of the positive bias stress instability in self-aligned coplanar InGaZnO thin-film transistors S Choi, J Jang, H Kang, JH Baeck, JU Bae, KS Park, SY Yoon, IB Kang, ... IEEE Electron Device Letters 38 (5), 580-583, 2017 | 47 | 2017 |
| Ultrasensitive electrical detection of hemagglutinin for point-of-care detection of influenza virus based on a CMP-NANA probe and top-down processed silicon nanowire field … M Uhm, JM Lee, J Lee, JH Lee, S Choi, BG Park, DM Kim, SJ Choi, ... Sensors 19 (20), 4502, 2019 | 33 | 2019 |
| Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin … S Choi, J Park, SH Hwang, C Kim, YS Kim, S Oh, JH Baeck, JU Bae, ... Advanced Electronic Materials 8 (5), 2101062, 2022 | 31 | 2022 |
| Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the … DH Kim, S Choi, J Jang, H Kang, DM Kim, SJ Choi, YS Kim, S Oh, ... Journal of the Society for Information Display 25 (2), 98-107, 2017 | 30 | 2017 |
| Total subgap range density of states-based analysis of the effect of oxygen flow rate on the bias stress instabilities in a-IGZO TFTs GW Yang, J Park, S Choi, C Kim, DM Kim, SJ Choi, JH Bae, IH Cho, ... IEEE Transactions on Electron Devices 69 (1), 166-173, 2021 | 26 | 2021 |
| The effect of gate and drain fields on the competition between donor-like state creation and local electron trapping in In–Ga–Zn–O thin film transistors under current stress S Choi, H Kim, C Jo, HS Kim, SJ Choi, DM Kim, J Park, DH Kim IEEE Electron Device Letters 36 (12), 1336-1339, 2015 | 24 | 2015 |
| Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices JT Jang, D Ko, S Choi, H Kang, JY Kim, HR Yu, G Ahn, H Jung, J Rhee, ... Solid-State Electronics 140, 115-121, 2018 | 22 | 2018 |
| Effect of simultaneous mechanical and electrical stress on the electrical performance of flexible In-Ga-Zn-O thin-film transistors Y Seo, HS Jeong, HY Jeong, S Park, JT Jang, S Choi, DM Kim, SJ Choi, ... Materials 12 (19), 3248, 2019 | 20 | 2019 |
| Method to extract interface and bulk trap separately over the full sub-gap range in amorphous InGaZnO thin-film transistors by using various channel thicknesses S Choi, JY Kim, J Rhee, H Kang, S Park, DM Kim, SJ Choi, DH Kim IEEE Electron Device Letters 40 (4), 574-577, 2019 | 18 | 2019 |
| Positive bias stress instability of InGaZnO TFTs with self-aligned top-gate structure in the threshold-voltage compensated pixel S Choi, S Park, J Kim, Y Seo, HJ Shin, YS Jeong, JU Bae, CH Oh, DM Kim, ... IEEE Electron Device Letters 41 (1), 50-53, 2019 | 17 | 2019 |
| Complementary hybrid semiconducting superlattices with multiple channels and mutual stabilization J Kim, CTT Huong, NV Long, M Yoon, MJ Kim, JK Jeong, S Choi, DH Kim, ... Nano Letters 20 (7), 4864-4871, 2020 | 16 | 2020 |
| Experimental extraction of stern-layer capacitance in biosensor detection using silicon nanowire field-effect transistors S Choi, HS Mo, J Kim, S Kim, SM Lee, SJ Choi, DM Kim, DW Park, ... Current Applied Physics 20 (6), 828-833, 2020 | 15 | 2020 |
| Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors S Choi, S Kim, J Jang, G Ahn, JT Jang, J Yoon, TJ Park, BG Park, DM Kim, ... Sensors and Actuators B: Chemical 296, 126616, 2019 | 15 | 2019 |
| The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress J Rhee, S Choi, H Kang, JY Kim, D Ko, G Ahn, H Jung, SJ Choi, DM Kim, ... Solid-State Electronics 140, 90-95, 2018 | 15 | 2018 |
| Modeling and characterization of the abnormal hump in n-channel amorphous-InGaZnO thin-film transistors after high positive bias stress J Lee, S Choi, SK Kim, SJ Choi, DH Kim, J Park, DM Kim IEEE Electron Device Letters 36 (10), 1047-1049, 2015 | 15 | 2015 |
| Influence of the gate/drain voltage configuration on the current stress instability in amorphous indium-zinc-oxide thin-film transistors with self-aligned top-gate structure S Choi, S Park, JY Kim, J Rhee, H Kang, DM Kim, SJ Choi, DH Kim IEEE Electron Device Letters 40 (9), 1431-1434, 2019 | 12 | 2019 |
| A study on the degradation of In-Ga–Zn-O thin-film transistors under current stress by local variations in density of states and trapped charge distribution S Choi, H Kim, C Jo, HS Kim, SJ Choi, DM Kim, J Park, DH Kim IEEE Electron Device Letters 36 (7), 690-692, 2015 | 12 | 2015 |
| Oxygen content and bias influence on amorphous InGaZnO TFT-based temperature sensor performance S Choi, S Kim, J Jang, J Kim, DM Kim, SJ Choi, HS Mo, SM Lee, DH Kim IEEE Electron Device Letters 40 (10), 1666-1669, 2019 | 9 | 2019 |
