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Yuanyuan Pan
Yuanyuan Pan
China University of Petroleum
在 pku.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ...
Scientific reports 6 (1), 21786, 2016
2982016
Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene
Y Wang, P Huang, M Ye, R Quhe, Y Pan, H Zhang, H Zhong, J Shi, J Lu
Chemistry of Materials 29 (5), 2191-2201, 2017
2662017
Monolayer phosphorene–metal contacts
Y Pan, Y Wang, M Ye, R Quhe, H Zhong, Z Song, X Peng, D Yu, J Yang, ...
Chemistry of Materials 28 (7), 2100-2109, 2016
2142016
Robust NiCoP/CoP heterostructures for highly efficient hydrogen evolution electrocatalysis in alkaline solution
H Liu, X Ma, H Hu, Y Pan, W Zhao, J Liu, X Zhao, J Wang, Z Yang, Q Zhao, ...
ACS applied materials & interfaces 11 (17), 15528-15536, 2019
1472019
Lattice distortion induced internal electric field in TiO2 photoelectrode for efficient charge separation and transfer
Y Hu, Y Pan, Z Wang, T Lin, Y Gao, B Luo, H Hu, F Fan, G Liu, L Wang
Nature Communications 11 (1), 2129, 2020
1312020
Research on the aging and rejuvenation mechanisms of asphalt using atomic force microscopy
A Chen, G Liu, Y Zhao, J Li, Y Pan, J Zhou
Construction and Building Materials 167, 177-184, 2018
1262018
Sub-10 nm two-dimensional transistors: Theory and experiment
R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ...
Physics Reports 938, 1-72, 2021
1132021
Graphdiyne–metal contacts and graphdiyne transistors
Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ...
Nanoscale 7 (5), 2116-2127, 2015
1112015
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ...
Reports on Progress in Physics 84 (5), 056501, 2021
1072021
Schottky barriers in bilayer phosphorene transistors
Y Pan, Y Dan, Y Wang, M Ye, H Zhang, R Quhe, X Zhang, J Li, W Guo, ...
ACS applied materials & interfaces 9 (14), 12694-12705, 2017
1012017
Hierarchically micro-and meso-porous Fe-N4O-doped carbon as robust electrocatalyst for CO2 reduction
X Wang, Y Pan, H Ning, H Wang, D Guo, W Wang, Z Yang, Q Zhao, ...
Applied Catalysis B: Environmental 266, 118630, 2020
952020
Intrinsic defect-rich hierarchically porous carbon architectures enabling enhanced capture and catalytic conversion of polysulfides
L Guan, H Hu, L Li, Y Pan, Y Zhu, Q Li, H Guo, K Wang, Y Huang, ...
ACS nano 14 (5), 6222-6231, 2020
942020
Monolayer tellurene–metal contacts
J Yan, X Zhang, Y Pan, J Li, B Shi, S Liu, J Yang, Z Song, H Zhang, M Ye, ...
Journal of Materials Chemistry C 6 (23), 6153-6163, 2018
922018
Sub 10 nm Bilayer Bi2O2Se Transistors
J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ...
Advanced Electronic Materials 5 (3), 1800720, 2019
832019
The pleiotropic regulator AdpA‐L directly controls the pathway‐specific activator of nikkomycin biosynthesis in Streptomyces ansochromogenes
Y Pan, G Liu, H Yang, Y Tian, H Tan
Molecular microbiology 72 (3), 710-723, 2009
832009
Interfacial Properties of Monolayer MoSe2–Metal Contacts
Y Pan, S Li, M Ye, R Quhe, Z Song, Y Wang, J Zheng, F Pan, W Guo, ...
The Journal of Physical Chemistry C 120 (24), 13063-13070, 2016
802016
Three-layer phosphorene-metal interfaces
X Zhang, Y Pan, M Ye, R Quhe, Y Wang, Y Guo, H Zhang, Y Dan, Z Song, ...
Nano Research 11, 707-721, 2018
782018
Monolayer bismuthene-metal contacts: a theoretical study
Y Guo, F Pan, M Ye, X Sun, Y Wang, J Li, X Zhang, H Zhang, Y Pan, ...
ACS applied materials & interfaces 9 (27), 23128-23140, 2017
782017
Electrical contacts in monolayer arsenene devices
Y Wang, M Ye, M Weng, J Li, X Zhang, H Zhang, Y Guo, Y Pan, L Xiao, ...
ACS Applied Materials & Interfaces 9 (34), 29273-29284, 2017
752017
Excellent device performance of sub‐5‐nm monolayer tellurene transistors
J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ...
Advanced Electronic Materials 5 (7), 1900226, 2019
722019
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