Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ... Scientific reports 6 (1), 21786, 2016 | 298 | 2016 |
Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene Y Wang, P Huang, M Ye, R Quhe, Y Pan, H Zhang, H Zhong, J Shi, J Lu Chemistry of Materials 29 (5), 2191-2201, 2017 | 266 | 2017 |
Monolayer phosphorene–metal contacts Y Pan, Y Wang, M Ye, R Quhe, H Zhong, Z Song, X Peng, D Yu, J Yang, ... Chemistry of Materials 28 (7), 2100-2109, 2016 | 214 | 2016 |
Robust NiCoP/CoP heterostructures for highly efficient hydrogen evolution electrocatalysis in alkaline solution H Liu, X Ma, H Hu, Y Pan, W Zhao, J Liu, X Zhao, J Wang, Z Yang, Q Zhao, ... ACS applied materials & interfaces 11 (17), 15528-15536, 2019 | 147 | 2019 |
Lattice distortion induced internal electric field in TiO2 photoelectrode for efficient charge separation and transfer Y Hu, Y Pan, Z Wang, T Lin, Y Gao, B Luo, H Hu, F Fan, G Liu, L Wang Nature Communications 11 (1), 2129, 2020 | 131 | 2020 |
Research on the aging and rejuvenation mechanisms of asphalt using atomic force microscopy A Chen, G Liu, Y Zhao, J Li, Y Pan, J Zhou Construction and Building Materials 167, 177-184, 2018 | 126 | 2018 |
Sub-10 nm two-dimensional transistors: Theory and experiment R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ... Physics Reports 938, 1-72, 2021 | 113 | 2021 |
Graphdiyne–metal contacts and graphdiyne transistors Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ... Nanoscale 7 (5), 2116-2127, 2015 | 111 | 2015 |
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ... Reports on Progress in Physics 84 (5), 056501, 2021 | 107 | 2021 |
Schottky barriers in bilayer phosphorene transistors Y Pan, Y Dan, Y Wang, M Ye, H Zhang, R Quhe, X Zhang, J Li, W Guo, ... ACS applied materials & interfaces 9 (14), 12694-12705, 2017 | 101 | 2017 |
Hierarchically micro-and meso-porous Fe-N4O-doped carbon as robust electrocatalyst for CO2 reduction X Wang, Y Pan, H Ning, H Wang, D Guo, W Wang, Z Yang, Q Zhao, ... Applied Catalysis B: Environmental 266, 118630, 2020 | 95 | 2020 |
Intrinsic defect-rich hierarchically porous carbon architectures enabling enhanced capture and catalytic conversion of polysulfides L Guan, H Hu, L Li, Y Pan, Y Zhu, Q Li, H Guo, K Wang, Y Huang, ... ACS nano 14 (5), 6222-6231, 2020 | 94 | 2020 |
Monolayer tellurene–metal contacts J Yan, X Zhang, Y Pan, J Li, B Shi, S Liu, J Yang, Z Song, H Zhang, M Ye, ... Journal of Materials Chemistry C 6 (23), 6153-6163, 2018 | 92 | 2018 |
Sub 10 nm Bilayer Bi2O2Se Transistors J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ... Advanced Electronic Materials 5 (3), 1800720, 2019 | 83 | 2019 |
The pleiotropic regulator AdpA‐L directly controls the pathway‐specific activator of nikkomycin biosynthesis in Streptomyces ansochromogenes Y Pan, G Liu, H Yang, Y Tian, H Tan Molecular microbiology 72 (3), 710-723, 2009 | 83 | 2009 |
Interfacial Properties of Monolayer MoSe2–Metal Contacts Y Pan, S Li, M Ye, R Quhe, Z Song, Y Wang, J Zheng, F Pan, W Guo, ... The Journal of Physical Chemistry C 120 (24), 13063-13070, 2016 | 80 | 2016 |
Three-layer phosphorene-metal interfaces X Zhang, Y Pan, M Ye, R Quhe, Y Wang, Y Guo, H Zhang, Y Dan, Z Song, ... Nano Research 11, 707-721, 2018 | 78 | 2018 |
Monolayer bismuthene-metal contacts: a theoretical study Y Guo, F Pan, M Ye, X Sun, Y Wang, J Li, X Zhang, H Zhang, Y Pan, ... ACS applied materials & interfaces 9 (27), 23128-23140, 2017 | 78 | 2017 |
Electrical contacts in monolayer arsenene devices Y Wang, M Ye, M Weng, J Li, X Zhang, H Zhang, Y Guo, Y Pan, L Xiao, ... ACS Applied Materials & Interfaces 9 (34), 29273-29284, 2017 | 75 | 2017 |
Excellent device performance of sub‐5‐nm monolayer tellurene transistors J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ... Advanced Electronic Materials 5 (7), 1900226, 2019 | 72 | 2019 |