Bidirectional photocurrent in p–n heterojunction nanowires D Wang, X Liu, Y Kang, X Wang, Y Wu, S Fang, H Yu, MH Memon, ... Nature Electronics 4 (9), 645-652, 2021 | 159 | 2021 |
Pt/AlGaN nanoarchitecture: Toward high responsivity, self-powered ultraviolet-sensitive photodetection D Wang, X Liu, S Fang, C Huang, Y Kang, H Yu, Z Liu, H Zhang, R Long, ... Nano Letters 21 (1), 120-129, 2020 | 146 | 2020 |
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review Z Ren, H Yu, Z Liu, D Wang, C Xing, H Zhang, C Huang, S Long, H Sun Journal of Physics D: Applied Physics 53 (7), 073002, 2019 | 137 | 2019 |
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics H Zhang, C Huang, K Song, H Yu, C Xing, D Wang, Z Liu, H Sun Reports on Progress in Physics 84 (4), 044401, 2021 | 126 | 2021 |
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm H Yu, MH Memon, D Wang, Z Ren, H Zhang, C Huang, M Tian, H Sun, ... Optics Letters 46 (13), 3271-3274, 2021 | 124 | 2021 |
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system C Huang, H Zhang, H Sun Nano Energy 77, 105149, 2020 | 119 | 2020 |
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W H Zhang, F Liang, K Song, C Xing, D Wang, H Yu, C Huang, Y Sun, ... Applied Physics Letters 118 (24), 2021 | 100 | 2021 |
Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity D Wang, C Huang, X Liu, H Zhang, H Yu, S Fang, BS Ooi, Z Mi, JH He, ... Advanced Optical Materials 9 (4), 2000893, 2021 | 98 | 2021 |
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier H Yu, Z Ren, H Zhang, J Dai, C Chen, S Long, H Sun Optics express 27 (20), A1544-A1553, 2019 | 66 | 2019 |
Tuning the charge transfer dynamics of the nanostructured GaN photoelectrodes for efficient photoelectrochemical detection in the ultraviolet band S Fang, D Wang, X Wang, X Liu, Y Kang, H Yu, H Zhang, W Hu, JH He, ... Advanced Functional Materials 31 (29), 2103007, 2021 | 61 | 2021 |
Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall M Tian, H Yu, MH Memon, Z Xing, C Huang, H Jia, H Zhang, D Wang, ... Optics Letters 46 (19), 4809-4812, 2021 | 59 | 2021 |
Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires D Wang, W Wu, S Fang, Y Kang, X Wang, W Hu, H Yu, H Zhang, X Liu, ... Light: Science & Applications 11 (1), 227, 2022 | 51 | 2022 |
Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors L Yang, H Zhang, Y Sun, K Hu, Z Xing, K Liang, S Fang, D Wang, H Yu, ... Applied Physics Letters 120 (9), 091103, 2022 | 44 | 2022 |
Demonstration of photoelectrochemical‐type photodetectors using seawater as electrolyte for portable and wireless optical communication Y Luo, D Wang, Y Kang, X Liu, S Fang, MH Memon, H Yu, H Zhang, ... Advanced Optical Materials 10 (10), 2102839, 2022 | 43 | 2022 |
Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection X Liu, D Wang, Y Kang, S Fang, H Yu, H Zhang, MH Memon, JH He, ... Advanced Functional Materials 32 (5), 2104515, 2022 | 42 | 2022 |
Deep‐Ultraviolet LEDs Incorporated with SiO2‐Based Microcavities Toward High‐Speed Ultraviolet Light Communication H Yu, MH Memon, H Jia, Y Ding, S Xiao, X Liu, Y Kang, D Wang, H Zhang, ... Advanced Optical Materials 10 (23), 2201738, 2022 | 30 | 2022 |
A 10× 10 deep ultraviolet light-emitting micro-LED array H Yu, MH Memon, H Jia, H Zhang, M Tian, S Fang, D Wang, Y Kang, ... Journal of Semiconductors 43 (6), 062801, 2022 | 27 | 2022 |
Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection S Fang, D Wang, Y Kang, X Liu, Y Luo, K Liang, L Li, H Yu, H Zhang, ... Advanced Functional Materials 32 (28), 2202524, 2022 | 26 | 2022 |
Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping K Song, H Zhang, H Fu, C Yang, R Singh, Y Zhao, H Sun, S Long Journal of Physics D: Applied Physics 53 (34), 345107, 2020 | 26 | 2020 |
Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with step-like quantum barriers C Xing, H Yu, Z Ren, H Zhang, J Dai, C Chen, H Sun IEEE Journal of Quantum Electronics 56 (1), 1-6, 2019 | 24 | 2019 |