| The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide-semiconductor … HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ... Applied Physics Letters 97 (4), 2010 | 131 | 2010 |
| The roles of threading dislocations on electrical properties of AlGaN/GaN heterostructure grown by MBE YY Wong, EY Chang, TH Yang, JR Chang, JT Ku, MK Hudait, WC Chou, ... Journal of The Electrochemical Society 157 (7), H746, 2010 | 79 | 2010 |
| Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ... IEEE Transactions on electron devices 61 (8), 2774-2778, 2014 | 45 | 2014 |
| Controlled growth of silicon nanowires synthesized via solid–liquid–solid mechanism YY Wong, M Yahaya, MM Salleh, BY Majlis Science and Technology of Advanced Materials 6 (3-4), 330, 2005 | 43 | 2005 |
| Effects of wet chemical and trimethyl aluminum treatments on the interface properties in atomic layer deposition of Al2O3 on InAs HD Trinh, EY Chang, YY Wong, CC Yu, CY Chang, YC Lin, HQ Nguyen, ... Japanese Journal of Applied Physics 49 (11R), 111201, 2010 | 41 | 2010 |
| Electrical Characterization of /n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments HD Trinh, G Brammertz, EY Chang, CI Kuo, CY Lu, YC Lin, HQ Nguyen, ... IEEE Electron Device Letters 32 (6), 752-754, 2011 | 39 | 2011 |
| Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures WC Huang, CM Chu, YY Wong, KW Chen, YK Lin, CH Wu, WI Lee, ... Materials Science in Semiconductor Processing 45, 1-8, 2016 | 37 | 2016 |
| Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO2 on n-InAs/InGaAs metal–oxide–semiconductor capacitors HD Trinh, YC Lin, HC Wang, CH Chang, K Kakushima, H Iwai, ... Applied Physics Express 5 (2), 021104, 2012 | 28 | 2012 |
| Growth of free-standing GaN layer on Si (1 1 1) substrate TH Yang, JT Ku, JR Chang, SG Shen, YC Chen, YY Wong, WC Chou, ... Journal of crystal growth 311 (7), 1997-2001, 2009 | 27 | 2009 |
| Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires SK Chong, BT Goh, YY Wong, HQ Nguyen, H Do, I Ahmad, Z Aspanut, ... Journal of Luminescence 132 (6), 1345-1352, 2012 | 23 | 2012 |
| Study of the inversion behaviors of Al2O3/InxGa1− xAs metal–oxide–semiconductor capacitors with different In contents YC Wu, EY Chang, YC Lin, CC Kei, MK Hudait, M Radosavljevic, ... Solid-state electronics 54 (1), 37-41, 2010 | 22 | 2010 |
| AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications YK Lin, S Noda, HC Lo, SC Liu, CH Wu, YY Wong, QH Luc, PC Chang, ... IEEE Electron Device Letters 37 (11), 1395-1398, 2016 | 21 | 2016 |
| Growth and fabrication of AlGaN/GaN HEMT on SiC substrate YY Wong, YS Chiu, TT Luong, TM Lin, YT Ho, YC Lin, EY Chang 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012 | 21 | 2012 |
| The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy YY Wong, EY Chang, TH Yang, JR Chang, YC Chen, JT Ku, CT Lee, ... Journal of crystal growth 311 (6), 1487-1492, 2009 | 19 | 2009 |
| Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy HW Yu, EY Chang, Y Yamamoto, B Tillack, WC Wang, CI Kuo, YY Wong, ... Applied Physics Letters 99 (17), 2011 | 17 | 2011 |
| Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy YH Wu, YY Wong, WC Chen, DS Tsai, CY Peng, JS Tian, L Chang, ... Materials Research Express 1 (1), 015904, 2014 | 16 | 2014 |
| Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In0. 5Ga0. 5As and In0. 3Ga0. 7As on GaAs substrate by using metal organic chemical vapor … HQ Nguyen, EY Chang, HW Yu, HD Trinh, CF Dee, YY Wong, CH Hsu, ... Applied Physics Express 5 (5), 055503, 2012 | 16 | 2012 |
| Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy YY Wong, EY Chang, YH Wu, MK Hudait, TH Yang, JR Chang, JT Ku, ... Thin Solid Films 519 (19), 6208-6213, 2011 | 16 | 2011 |
| Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD TT Luong, YT Ho, YY Wong, S Chang, EY Chang Microelectronics Reliability 83, 286-292, 2018 | 14 | 2018 |
| Effect of substrate misorientation on the material properties of GaAs/Al0. 3Ga0. 7As tunnel diodes HW Yu, EY Chang, HQ Nguyen, JT Chang, CC Chung, CI Kuo, YY Wong, ... Applied physics letters 97 (23), 2010 | 14 | 2010 |
