| Microelectromechanical tunable fabry-perot wavelength monitor with thermal actuators M Missey, B Pezeshki US Patent App. 09/954,974, 2003 | 181 | 2003 |
| Vertical coupled-cavity microinterferometer on GaAs with deformable-membrane top mirror MC Larson, B Pezeshki, JS Harris IEEE Photonics Technology Letters 7 (4), 382-384, 1995 | 154 | 1995 |
| Electrostatically tunable optical device and optical interconnect for processors B Pezeshki, JS Harris Jr US Patent 5,291,502, 1994 | 135 | 1994 |
| 20-mW widely tunable laser module using DFB array and MEMS selection B Pezeshki, E Vail, J Kubicky, G Yoffe, S Zou, J Heanue, P Epp, S Rishton, ... IEEE Photonics Technology Letters 14 (10), 1457-1459, 2002 | 121 | 2002 |
| Dynamic optical grating device B Pezeshki, JS Harris Jr US Patent 5,222,071, 1993 | 102 | 1993 |
| Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators B Pezeshki, D Thomas, JS Harris Jr Applied physics letters 57 (15), 1491-1492, 1990 | 94 | 1990 |
| Microstructure of AlGaAs‐oxide heterolayers formed by wet oxidation S Guha, F Agahi, B Pezeshki, JA Kash, DW Kisker, NA Bojarczuk Applied physics letters 68 (7), 906-908, 1996 | 93 | 1996 |
| Tapered fabry-perot waveguide optical demultiplexer JA Kash, B Pezeshki, FF Tong US Patent 5,343,542, 1994 | 77 | 1994 |
| Tunable controlled laser array B Pezeshki, J Heanue, E Vail US Patent 6,914,916, 2005 | 74 | 2005 |
| 12nm tunable WDM source using an integrated laser array B Pezeshki, A Mathur, S Zou, HS Jeon, V Agrawal, RL Lang Electronics Letters 36 (9), 1, 2000 | 71 | 2000 |
| Vertical cavity devices as wavelength selective waveguides B Pezeshki, FF Tong, JA Kash, DW Kisker Journal of lightwave technology 12 (10), 1791-1801, 1994 | 66 | 1994 |
| Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections K Bacher, B Pezeshki, SM Lord, JS Harris Jr Applied physics letters 61 (12), 1387-1389, 1992 | 66 | 1992 |
| Variable index distributed mirror SMC Gates, AC Lowe, B Pezeshki US Patent 5,799,231, 1998 | 62 | 1998 |
| Wavelength-selective devices using silicon-on-insulator F Agahi, B Pezeshki, JA Kash, JJ Welser US Patent 5,559,912, 1996 | 60 | 1996 |
| Multiple wavelength optical sources S MacCormack, DM Giltner, VG Dominic, DR Scifres, B Pezeshki, EC Vail, ... US Patent 6,407,855, 2002 | 52 | 2002 |
| Tunable distributed feedback laser M Missey, B Pezeshki, RJ Lang US Patent 6,754,243, 2004 | 50 | 2004 |
| Thickness control of semiconductor device layers in reactive ion etch processes JG Crockett, B Pezeshki, RL Sandstrom US Patent 5,882,468, 1999 | 49 | 1999 |
| Recombination in GaAs at the AlAs oxide‐GaAs interface JA Kash, B Pezeshki, F Agahi, NA Bojarczuk Applied physics letters 67 (14), 2022-2024, 1995 | 44 | 1995 |
| High-power and diffraction-limited red lasers B Pezeshki, M Hagberg, B Lu, M Zelinski, S Zou, EI Kolev In-Plane Semiconductor Lasers IV 3947, 80-90, 2000 | 43 | 2000 |
| Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy SM Lord, B Pezeshki, JS Harris Electronics Letters 13 (28), 1193-1195, 1992 | 43 | 1992 |
James S. Harris, Jr.Professor of Electrical Engineering, Stanford University在 stanford.edu 的电子邮件经过验证
