| Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ... Microelectronics Reliability 54 (4), 682-697, 2014 | 49 | 2014 |
| Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ... IEEE electron device letters 34 (5), 683-685, 2013 | 47 | 2013 |
| Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ... IEEE transactions on electron devices 60 (2), 833-839, 2012 | 34 | 2012 |
| Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging M Duan, JF Zhang, Z Ji, WD Zhang, D Vigar, A Asenov, L Gerrer, ... IEEE Transactions on Electron Devices 63 (9), 3642-3648, 2016 | 33 | 2016 |
| Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ... IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015 | 25 | 2015 |
| RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov Solid-State Electronics 84, 120-126, 2013 | 22 | 2013 |
| Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013 | 22 | 2013 |
| 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov IEEE transactions on electron devices 60 (12), 4008-4013, 2013 | 21 | 2013 |
| Statistical interactions of multiple oxide traps under BTI stress of nanoscale MOSFETs S Markov, SM Amoroso, L Gerrer, F Adamu-Lema, A Asenov IEEE electron device letters 34 (5), 686-688, 2013 | 19 | 2013 |
| Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’simulation SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 19 | 2012 |
| Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM M Duan, JF Zhang, A Manut, Z Ji, W Zhang, A Asenov, L Gerrer, D Reid, ... 2015 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2015 | 18 | 2015 |
| Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2020 | 15 | 2020 |
| Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale flash memories SM Amoroso, L Gerrer, F Adamu-Lema, S Markov, A Asenov 2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 4.1-3B. 4.6, 2013 | 13 | 2013 |
| Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs L Gerrer, S Markov, SM Amoroso, F Adamu-Lema, A Asenov Microelectronics Reliability 52 (9-10), 1918-1923, 2012 | 13 | 2012 |
| Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance SM Amoroso, VP Georgiev, L Gerrer, E Towie, X Wang, C Riddet, ... IEEE Transactions on Electron Devices 61 (12), 4014-4018, 2014 | 12 | 2014 |
| RTN distribution comparison for bulk, FDSOI and FinFETs devices L Gerrer, SM Amoroso, R Hussin, A Asenov Microelectronics Reliability 54 (9-10), 1749-1752, 2014 | 12 | 2014 |
| Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ... IEEE Transactions on Electron Devices 68 (4), 2017-2024, 2021 | 11 | 2021 |
| Experimental evidences and simulations of trap generation along a percolation path L Gerrer, R Hussin, SM Amoroso, J Franco, P Weckx, M Simicic, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 226-229, 2015 | 11 | 2015 |
| Reliability aware simulation flow: From TCAD calibration to circuit level analysis R Hussin, L Gerrer, J Ding, SM Amaroso, L Wang, M Semicic, P Weckx, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 10 | 2015 |
| 3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs SM Amoroso, L Gerrer, A Asenov 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 10 | 2013 |
a asenovThe University of Glasgow在 glasgow.ac.uk 的电子邮件经过验证
