| Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi, J Brugger, AM Ionescu Nature Electronics 6 (9), 658-668, 2023 | 42 | 2023 |
| Subthermionic negative capacitance ion sensitive field-effect transistor F Bellando, CK Dabhi, A Saeidi, C Gastaldi, YS Chauhan, AM Ionescu Applied Physics Letters 116 (17), 2020 | 26 | 2020 |
| Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures S Kamaei, A Saeidi, C Gastaldi, T Rosca, L Capua, M Cavalieri, ... npj 2D Materials and Applications 5 (1), 76, 2021 | 23 | 2021 |
| Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process M Cavalieri, E O’Connor, C Gastaldi, I Stolichnov, AM Ionescu ACS Applied Electronic Materials 2 (6), 1752-1758, 2020 | 20 | 2020 |
| Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor C Gastaldi, M Cavalieri, A Saeidi, E O'Connor, S Kamaei, T Rosca, ... Applied Physics Letters 118 (19), 2021 | 17 | 2021 |
| Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1− xZrxO2-based structures I Stolichnov, M Cavalieri, C Gastaldi, M Hoffmann, U Schroeder, ... Applied Physics Letters 117 (17), 2020 | 13 | 2020 |
| Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs C Gastaldi, A Saeidi, M Cavalieri, I Stolichnov, P Muralt, AM Ionescu 2019 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2019 | 12 | 2019 |
| Evidences of areal switching in Vacancy-Modulated Conductive Oxide (VMCO) memory U Celano, C Gastaldi, B Govoreanu, O Richard, H Bender, L Goux, ... Microelectronic Engineering 178, 122-124, 2017 | 10 | 2017 |
| Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer C Gastaldi, M Cavalieri, A Saeidi, E O’Connor, F Bellando, I Stolichnov, ... IEEE Transactions on Electron Devices 69 (5), 2680-2685, 2022 | 9 | 2022 |
| Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures. npj 2D Mater S Kamaei, A Saeidi, C Gastaldi, T Rosca, L Capua, M Cavalieri, ... Appl 5, 1-10, 2021 | 9 | 2021 |
| Non-filamentary (VMCO) memory: A two-and three-dimensional study on switching and failure modes U Celano, C Gastaldi, S Subhechha, B Govoreanu, G Donadio, ... 2017 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2017 | 6 | 2017 |
| Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+ y thin films R Paul, V Conti, M Zamani, S Escobar-Steinvall, H Sánchez-Martín, ... Solar Energy Materials and Solar Cells 252, 112194, 2023 | 5 | 2023 |
| Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse C Gastaldi, S Kamaei, M Cavalieri, A Saeidi, I Stolichnov, I Radu, ... IEEE Electron Device Letters 44 (4), 678-681, 2023 | 5 | 2023 |
| Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage S Kamaei, M Ghini, A Gilani, C Gastaldi, E Collette, AM Ionescu IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Fully integrated Si: HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs S Kamaei, A Saeidi, X Liu, C Gastaldi, C Moldovan, J Brugger, ... ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC …, 2022 | 1 | 2022 |
| A Study of Ferroelectric Polarization Switching and Negative Capacitance Effect for Enhanced Energy Storage in on-Chip Electrostatic Supercapacitors S Kamaei, M Ghini, A Gilani, C Gastaldi, AM Ionescu 2023 22nd International Conference on Solid-State Sensors, Actuators and …, 2023 | | 2023 |
| A hybrid technology platform integrating 2D materials and ferroelectric gate stacks: from steep slope logic switches to neuromorphic applications S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi, J Brugger, A Ionescu | | 2022 |
| Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2 C Gastaldi EPFL, 2022 | | 2022 |
| Group ID U10328 Affiliated authors Abelé, Nicolas D Acquaviva, C Alper, E Ansari, ST Bartsch, A Bazigos, P Beaud, ... | | |
