| Improved quantitative description of Auger recombination in crystalline silicon A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas Phys. Rev. B 86, 165202/1-14, 2012 | 1043 | 2012 |
| Silicon surface passivation by atomic-layer-deposited Al2O3 B Hoex, J Schmidt, P Pohl, MCM van de Sanden, WMM Kessels Journal of Applied Physics 104, 044903, 2008 | 631 | 2008 |
| Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels Progress in photovoltaics: research and applications 16 (6), 461-466, 2008 | 609 | 2008 |
| Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon J Schmidt, K Bothe Physical review B 69 (2), 024107, 2004 | 580 | 2004 |
| Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 2007 | 515 | 2007 |
| Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon C Schinke, P Peest, R Brendel, J Schmidt, K Bothe, M Vogt, I Kröger, ... AIP Advances 5, 067168, 2015 | 497 | 2015 |
| Electronically activated boron-oxygen-related recombination centers in crystalline silicon K Bothe, J Schmidt Journal of Applied Physics 99 (1), 2006 | 464 | 2006 |
| Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation T Lauinger, J Schmidt, AG Aberle, R Hezel Applied physics letters 68 (9), 1232-1234, 1996 | 431 | 1996 |
| Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon K Bothe, R Sinton, J Schmidt Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005 | 388 | 2005 |
| Surface passivation of crystalline silicon solar cells: Present and future J Schmidt, R Peibst, R Brendel Sol. En. Mat. Sol. Cells 187, 39-54, 2018 | 384 | 2018 |
| Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks J Schmidt, M Kerr, A Cuevas Semiconductor science and technology 16 (3), 164, 2001 | 355 | 2001 |
| Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide MJ Kerr, J Schmidt, A Cuevas, JH Bultman Journal of applied physics 89 (7), 3821-3826, 2001 | 348 | 2001 |
| Investigation of carrier lifetime instabilities in Cz-grown silicon J Schmidt, AG Aberle, R Hezel Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists …, 1997 | 348 | 1997 |
| 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon JH Petermann, D Zielke, J Schmidt, F Haase, EG Rojas, R Brendel Progress in Photovoltaics: Research and Applications 20 (1), 1-5, 2012 | 322 | 2012 |
| Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon J Schmidt, A Cuevas Journal of Applied Physics 86 (6), 3175-3180, 1999 | 308 | 1999 |
| Electronic and chemical properties of the c-Si/Al2O3 interface F Werner, B Veith, D Zielke, L Kühnemund, C Tegenkamp, M Seibt, ... Journal of Applied Physics 109 (11), 2011 | 277 | 2011 |
| Industrial silicon solar cells applying the passivated emitter and rear cell (PERC) concept – a review T Dullweber, J Schmidt IEEE Journal of Photovoltaics 6, 1366, 2016 | 253 | 2016 |
| Accurate method for the determination of bulk minority-carrier lifetimes of mono-and multicrystalline silicon wafers J Schmidt, AG Aberle Journal of Applied Physics 81 (9), 6186-6199, 1997 | 250 | 1997 |
| Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition J Schmidt, AG Aberle Journal of Applied Physics 85, 3626-3633, 1999 | 232 | 1999 |
| Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks J Schmidt, B Veith, R Brendel physica status solidi (RRL)–Rapid Research Letters 3 (9), 287-289, 2009 | 227 | 2009 |
Karsten BotheGroup Leader Solar Cell Characterisation and simulation, Institut für Solarenergieforschung在 isfh.de 的电子邮件经过验证
