| MoS2 Transistors with 1-nanometer gate length SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ... Science 354, 99-102, 0 | 1446* | |
| Ultralow contact resistance between semimetal and monolayer semiconductors PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ... Nature 593 (7858), 211-217, 2021 | 753 | 2021 |
| Energy-efficient abundant-data computing: The N3XT 1,000 x MMS Aly, M Gao, G Hills, CS Lee, G Pitner, MM Shulaker, TF Wu, ... Computer 48 (12), 24-33, 2015 | 282 | 2015 |
| Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes T Lei, LL Shao, YQ Zheng, G Pitner, G Fang, C Zhu, S Li, R Beausoleil, ... Nature communications 10 (1), 2161, 2019 | 188 | 2019 |
| Removable and recyclable conjugated polymers for highly selective and high-yield dispersion and release of low-cost carbon nanotubes T Lei, X Chen, G Pitner, HSP Wong, Z Bao Journal of the American Chemical Society 138 (3), 802-805, 2016 | 186 | 2016 |
| Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors. S Park, G Pitner, G Giri, JH Koo, J Park, K Kim, H Wang, R Sinclair, ... Advanced Materials (Deerfield Beach, Fla.) 27 (16), 2656-2662, 2015 | 152 | 2015 |
| Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor. S Park, SJ Kim, JH Nam, G Pitner, TH Lee, AL Ayzner, H Wang, SW Fong, ... Advanced Materials (Deerfield Beach, Fla.) 27 (4), 759-765, 2014 | 148 | 2014 |
| VLSI-compatible carbon nanotube doping technique with low work-function metal oxides L Suriyasena Liyanage, X Xu, G Pitner, Z Bao, HSP Wong Nano letters 14 (4), 1884-1890, 2014 | 90 | 2014 |
| Fast Spiking of a Mott VO2–Carbon Nanotube Composite Device SM Bohaichuk, S Kumar, G Pitner, CJ McClellan, J Jeong, MG Samant, ... Nano letters 19 (10), 6751-6755, 2019 | 73 | 2019 |
| High-performance carbon nanotube field-effect transistors MM Shulaker, G Pitner, G Hills, M Giachino, HSP Wong, S Mitra 2014 IEEE International Electron Devices Meeting, 33.6. 1-33.6. 4, 2014 | 72 | 2014 |
| Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT S Park, G Giri, L Shaw, G Pitner, J Ha, JH Koo, X Gu, J Park, TH Lee, ... Proceedings of the National Academy of Sciences 112 (18), 5561-5566, 2015 | 64 | 2015 |
| Universal selective dispersion of semiconducting carbon nanotubes from commercial sources using a supramolecular polymer A Chortos, I Pochorovski, P Lin, G Pitner, X Yan, TZ Gao, JWF To, T Lei, ... ACS nano 11 (6), 5660-5669, 2017 | 63 | 2017 |
| Low-temperature side contact to carbon nanotube transistors: Resistance distributions down to 10 nm contact length G Pitner, G Hills, JP Llinas, KM Persson, R Park, J Bokor, S Mitra, ... Nano letters 19 (2), 1083-1089, 2019 | 54 | 2019 |
| Dispersion of High‐Purity Semiconducting Arc‐Discharged Carbon Nanotubes Using Backbone Engineered Diketopyrrolopyrrole (DPP)‐Based Polymers T Lei, G Pitner, X Chen, G Hong, S Park, P Hayoz, RT Weitz, HSP Wong, ... Advanced Electronic Materials 2 (1), 1500299, 2016 | 43 | 2016 |
| Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ... 2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015 | 40 | 2015 |
| Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube SM Bohaichuk, M Muñoz Rojo, G Pitner, CJ McClellan, F Lian, J Li, ... ACS nano 13 (10), 11070-11077, 2019 | 34 | 2019 |
| High on-current 2D nFET of 390 μA/μm at VDS= 1V using monolayer CVD MoS2 without intentional doping AS Chou, PC Shen, CC Cheng, LS Lu, WC Chueh, MY Li, G Pitner, ... 2020 Ieee Symposium on Vlsi Technology, 1-2, 2020 | 31 | 2020 |
| Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm gate length G Pitner, Z Zhang, Q Lin, SK Su, C Gilardi, C Kuo, H Kashyap, T Weiss, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2020 | 16 | 2020 |
| Perspective on low-dimensional channel materials for extremely scaled CMOS SK Su, E Chen, TYT Hung, MZ Li, G Pitner, CC Cheng, H Wang, J Cai, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 15 | 2022 |
| Bandgap extraction at 10 K to enable leakage control in carbon nanotube MOSFETs Q Lin, G Pitner, C Gilardi, SK Su, Z Zhang, E Chen, P Bandaru, A Kummel, ... IEEE Electron Device Letters 43 (3), 490-493, 2022 | 12 | 2022 |
