| Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ... IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019 | 40 | 2019 |
| Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy AE Naclerio, DN Zakharov, J Kumar, B Rogers, CL Pint, M Shrivastava, ... ACS applied materials & interfaces 12 (13), 15844-15854, 2020 | 22 | 2020 |
| Stone–Wales defect and vacancy-assisted enhanced atomic orbital interactions between graphene and ambient gases: A first-principles insight J Kumar, Ansh, M Shrivastava ACS omega 5 (48), 31281-31288, 2020 | 21 | 2020 |
| MoS2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation K Hemanjaneyulu, J Kumar, M Shrivastava IEEE Transactions on Electron Devices 66 (7), 3224-3228, 2019 | 18 | 2019 |
| Chalcogen-assisted enhanced atomic orbital interaction at TMD–Metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs J Kumar, G Sheoran, HB Variar, R Mishra, H Kuruva, A Meersha, A Mishra, ... IEEE Transactions on Electron Devices 67 (2), 717-724, 2020 | 15 | 2020 |
| Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors Ansh, J Kumar, G Sheoran, M Shrivastava npj 2D Materials and Applications 4 (1), 37, 2020 | 14 | 2020 |
| Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering J Kumar, G Sheoran, R Mishra, S Raghavan, M Shrivastava IEEE Transactions on Electron Devices 67 (1), 383-388, 2019 | 11 | 2019 |
| Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition A Ansh, U Patbhaje, J Kumar, A Meersha, M Shrivastava Communications Materials 4 (1), 8, 2023 | 8 | 2023 |
| Carbon vacancy assisted contact resistance engineering in graphene FETs J Kumar, A Meersha, HB Variar, A Mishra, M Shrivastava IEEE Transactions on Electron Devices 69 (4), 2066-2073, 2022 | 8 | 2022 |
| Defect assisted metal-TMDs interface engineering: A first principle insight J Kumar, A Ansh, H Kuruva, M Shrivastava 2020 Device Research Conference (DRC), 1-2, 2020 | 8 | 2020 |
| Role of chalcogen defect introducing metal-induced Gap states and Its implications for metal–TMDs’ interface chemistry J Kumar, M Shrivastava ACS omega 8 (11), 10176-10184, 2023 | 7 | 2023 |
| First-principles molecular dynamics insight into the atomic level degradation pathway of phosphorene J Kumar, M Shrivastava ACS omega 7 (1), 696-704, 2022 | 7 | 2022 |
| Time dependent shift in SOA boundary and early breakdown of epi-stack in AlGaN/GaN HEMTs under fast cyclic transient stress B Shankar, S Shikha, A Singh, J Kumar, A Soni, SD Gupta, S Raghavan, ... IEEE Transactions on Device and Materials Reliability 20 (3), 562-569, 2020 | 7 | 2020 |
| Unveiling unintentional fluorine doping in TMDs during the reactive ion etching: Root cause analysis, physical insights, and solution K Hemanjaneyulu, A Meersha, J Kumar, M Shrivastava IEEE Transactions on Electron Devices 69 (4), 1956-1963, 2022 | 5 | 2022 |
| First Insights into Electro-Thermal Stress Driven Time-Dependent Permanent Degradation Failure of CVD Monolayer MoS2 Channel A Ansh, G Sheoran, J Kumar, M Shrivastava 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 5 | 2020 |
| H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors J Kumar, RK Mishra, S Raghavan, M Shrivastava arXiv preprint arXiv:1901.02148, 2019 | 4 | 2019 |
| Breathing mode’s temperature coefficient estimation and interlayer phonon scattering model of few-layer phosphorene J Kumar, U Patbhaje, M Shrivastava ACS omega 7 (48), 43462-43467, 2022 | 3 | 2022 |
| Unified Mechanism for Graphene FET’s Electrothermal Breakdown and Its Implications on Safe Operating Limits A Mishra, A Meersha, NK Kranthi, J Kumar, NSV Bellamkonda, HB Variar, ... IEEE Transactions on Electron Devices 68 (5), 2530-2537, 2021 | 3 | 2021 |
| Introduction of Near to Far Infrared Range Direct Band Gaps in Graphene: A First Principle Insight J Kumar, Ansh, M Shrivastava ACS omega 6 (8), 5619-5626, 2021 | 3 | 2021 |
| Physical insights into phosphorene transistor degradation under exposure to atmospheric conditions and electrical stress J Kumar, A Yadav, A Singh, A Naclerio, D Zakharov, P Kidambi, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 3 | 2020 |
