| Resistance random access memory TC Chang, KC Chang, TM Tsai, TJ Chu, SM Sze Materials Today 19 (5), 254-264, 2016 | 528 | 2016 |
| Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ... Nanoscale research letters 10, 1-27, 2015 | 157 | 2015 |
| Functionally complete Boolean logic in 1T1R resistive random access memory ZR Wang, YT Su, Y Li, YX Zhou, TJ Chu, KC Chang, TC Chang, TM Tsai, ... IEEE Electron Device Letters 38 (2), 179-182, 2016 | 116 | 2016 |
| Characteristics and mechanisms of silicon-oxide-based resistance random access memory KC Chang, TM Tsai, TC Chang, HH Wu, JH Chen, YE Syu, GW Chang, ... IEEE electron device letters 34 (3), 399-401, 2013 | 75 | 2013 |
| Charge quantity influence on resistance switching characteristic during forming process TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ... IEEE Electron Device Letters 34 (4), 502-504, 2013 | 71 | 2013 |
| Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ... IEEE electron device letters 34 (5), 677-679, 2013 | 59 | 2013 |
| Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ... IEEE electron device letters 34 (7), 864-866, 2013 | 55 | 2013 |
| Characteristics of hafnium oxide resistance random access memory with different setting compliance current YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ... Applied Physics Letters 103 (16), 2013 | 54 | 2013 |
| Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory PH Chen, KC Chang, TC Chang, TM Tsai, CH Pan, TJ Chu, MC Chen, ... IEEE Electron Device Letters 37 (3), 280-283, 2016 | 50 | 2016 |
| Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ... IEEE electron device letters 35 (6), 633-635, 2014 | 49 | 2014 |
| A method to reduce forming voltage without degrading device performance in hafnium oxide-based 1T1R resistive random access memory YT Su, HW Liu, PH Chen, TC Chang, TM Tsai, TJ Chu, CH Pan, CH Wu, ... IEEE Journal of the Electron Devices Society 6, 341-345, 2018 | 45 | 2018 |
| Dual ion effect of the lithium silicate resistance random access memory KC Chang, TM Tsai, TC Chang, KH Chen, R Zhang, ZY Wang, JH Chen, ... IEEE electron device letters 35 (5), 530-532, 2014 | 44 | 2014 |
| Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ... Applied Physics Letters 103 (8), 2013 | 44 | 2013 |
| Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor YJ Chen, KC Chang, TC Chang, HL Chen, TF Young, TM Tsai, R Zhang, ... IEEE Electron Device Letters 35 (10), 1016-1018, 2014 | 43 | 2014 |
| Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ... IEEE electron device letters 34 (5), 617-619, 2013 | 42 | 2013 |
| Hydrogen induced redox mechanism in amorphous carbon resistive random access memory YJ Chen, HL Chen, TF Young, TC Chang, TM Tsai, KC Chang, R Zhang, ... Nanoscale research letters 9, 1-5, 2014 | 41 | 2014 |
| Low Temperature Improvement Method on Resistive Random Access Memory Devices KC Chang, TM Tsai, TC Chang, HH Wu, KH Chen, JH Chen, TF Young, ... IEEE electron device letters 34 (4), 511-513, 2013 | 40 | 2013 |
| An electronic synapse device based on solid electrolyte resistive random access memory W Zhang, Y Hu, TC Chang, KC Chang, TM Tsai, HL Chen, YT Su, TJ Chu, ... IEEE Electron Device Letters 36 (8), 772-774, 2015 | 28 | 2015 |
| Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ... Applied Physics Letters 105 (22), 2014 | 28 | 2014 |
| Resistive random access memory TC Chang, K Chang, TM Tsai, TJ Chu, CH Pan US Patent App. 14/559,112, 2016 | 26 | 2016 |
