RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs S Cho, KR Kim, BG Park, IM Kang IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011 | 211 | 2011 |
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power … S Kim, S Jung, MH Kim, S Cho, BG Park Applied Physics Letters 106 (21), 212106, 2015 | 109 | 2015 |
Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang IEEE transactions on electron devices 58 (12), 4164-4171, 2011 | 103 | 2011 |
Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018 | 91 | 2018 |
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction KS Kim, YJ Ji, KH Kim, S Choi, DH Kang, K Heo, S Cho, S Yim, S Lee, ... Nature communications 10 (1), 1-10, 2019 | 84 | 2019 |
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications SC H Yoo, K Heo, MHR Ansari Nanomaterials 11 (4), 832-1-832-21, 2021 | 57 | 2021 |
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020 | 54 | 2020 |
Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation S Cho, I Man Kang, TI Kamins, BG Park, JS Harris Applied Physics Letters 99 (24), 2011 | 54 | 2011 |
Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation MW Kwon, MH Baek, S Hwang, K Park, T Jang, T Kim, J Lee, S Cho, ... Journal of Applied Physics 124 (15), 152107, 2018 | 49 | 2018 |
Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors JS Lee, JH Seo, S Cho, JH Lee, SW Kang, JH Bae, ES Cho, IM Kang Current Applied Physics 13 (6), 1143-1149, 2013 | 46 | 2013 |
Characterization and optimization of inverted-T FinFET under nanoscale dimensions E Yu, K Heo, S Cho IEEE Transactions on Electron Devices 65 (8), 3521-3527, 2018 | 45 | 2018 |
Fully Si compatible SiN resistive switching memory with large self-rectification ratio S Kim, S Cho, BG Park AIP Advances 6 (1), 015021, 2016 | 41 | 2016 |
Effects of ZrO2 doping on HfO2 resistive switching memory characteristics SW Ryu, S Cho, J Park, J Kwac, HJ Kim, Y Nishi Applied Physics Letters 105 (7), 2014 | 40 | 2014 |
Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure S Kim, S Cho, KC Ryoo, BG Park Journal of Vacuum Science & Technology B 33 (6), 2015 | 39 | 2015 |
Nano-cone resistive memory for ultralow power operation S Kim, S Jung, MH Kim, TH Kim, S Bang, S Cho, BG Park Nanotechnology 28 (12), 125207, 2017 | 38 | 2017 |
3D stacked array having cut-off gate line and fabrication method thereof B Park, S Cho, WB Shim US Patent 8,786,004, 2014 | 36 | 2014 |
Fabrication and characterization of a thin-body poly-si 1T DRAM with charge-trap effect JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho IEEE Electron Device Letters 40 (4), 566-569, 2019 | 35 | 2019 |
Design optimization of a type-I heterojunction tunneling field-effect transistor (I-HTFET) for high performance logic technology S Cho, MC Sun, G Kim, TI Kamins, BG Park, JS Harris Jr J. Semiconductor Technology and Science 11 (3), 182-189, 2011 | 34 | 2011 |
Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications S Kim, H Kim, S Jung, MH Kim, SH Lee, S Cho, BG Park Journal of Alloys and Compounds 663, 419-423, 2016 | 33 | 2016 |
Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications S Kim, S Jung, MH Kim, S Cho, BG Park Solid-State Electronics 114, 94-97, 2015 | 33 | 2015 |