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Seongjae Cho
Seongjae Cho
Department of Electronic and Electrical Engineering, Ewha Womans University
在 ewha.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs
S Cho, KR Kim, BG Park, IM Kang
IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011
2112011
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power …
S Kim, S Jung, MH Kim, S Cho, BG Park
Applied Physics Letters 106 (21), 212106, 2015
1092015
Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors
S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang
IEEE transactions on electron devices 58 (12), 4164-4171, 2011
1032011
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
912018
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
KS Kim, YJ Ji, KH Kim, S Choi, DH Kang, K Heo, S Cho, S Yim, S Lee, ...
Nature communications 10 (1), 1-10, 2019
842019
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications
SC H Yoo, K Heo, MHR Ansari
Nanomaterials 11 (4), 832-1-832-21, 2021
572021
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering
JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ...
IEEE Access 8, 130678-130686, 2020
542020
Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation
S Cho, I Man Kang, TI Kamins, BG Park, JS Harris
Applied Physics Letters 99 (24), 2011
542011
Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation
MW Kwon, MH Baek, S Hwang, K Park, T Jang, T Kim, J Lee, S Cho, ...
Journal of Applied Physics 124 (15), 152107, 2018
492018
Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors
JS Lee, JH Seo, S Cho, JH Lee, SW Kang, JH Bae, ES Cho, IM Kang
Current Applied Physics 13 (6), 1143-1149, 2013
462013
Characterization and optimization of inverted-T FinFET under nanoscale dimensions
E Yu, K Heo, S Cho
IEEE Transactions on Electron Devices 65 (8), 3521-3527, 2018
452018
Fully Si compatible SiN resistive switching memory with large self-rectification ratio
S Kim, S Cho, BG Park
AIP Advances 6 (1), 015021, 2016
412016
Effects of ZrO2 doping on HfO2 resistive switching memory characteristics
SW Ryu, S Cho, J Park, J Kwac, HJ Kim, Y Nishi
Applied Physics Letters 105 (7), 2014
402014
Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure
S Kim, S Cho, KC Ryoo, BG Park
Journal of Vacuum Science & Technology B 33 (6), 2015
392015
Nano-cone resistive memory for ultralow power operation
S Kim, S Jung, MH Kim, TH Kim, S Bang, S Cho, BG Park
Nanotechnology 28 (12), 125207, 2017
382017
3D stacked array having cut-off gate line and fabrication method thereof
B Park, S Cho, WB Shim
US Patent 8,786,004, 2014
362014
Fabrication and characterization of a thin-body poly-si 1T DRAM with charge-trap effect
JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho
IEEE Electron Device Letters 40 (4), 566-569, 2019
352019
Design optimization of a type-I heterojunction tunneling field-effect transistor (I-HTFET) for high performance logic technology
S Cho, MC Sun, G Kim, TI Kamins, BG Park, JS Harris Jr
J. Semiconductor Technology and Science 11 (3), 182-189, 2011
342011
Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications
S Kim, H Kim, S Jung, MH Kim, SH Lee, S Cho, BG Park
Journal of Alloys and Compounds 663, 419-423, 2016
332016
Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications
S Kim, S Jung, MH Kim, S Cho, BG Park
Solid-State Electronics 114, 94-97, 2015
332015
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