| High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling S Bangsaruntip, GM Cohen, A Majumdar, Y Zhang, SU Engelmann, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 609 | 2009 |
| Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ... 2010 symposium on VLSI technology, 21-22, 2010 | 307 | 2010 |
| Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma D Metzler, RL Bruce, S Engelmann, EA Joseph, GS Oehrlein Journal of Vacuum Science & Technology A 32 (2), 2014 | 209 | 2014 |
| Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication H Tsai, JW Pitera, H Miyazoe, S Bangsaruntip, SU Engelmann, CC Liu, ... ACS nano 8 (5), 5227-5232, 2014 | 177 | 2014 |
| Experimental realization of deep-subwavelength confinement in dielectric optical resonators S Hu, M Khater, R Salas-Montiel, E Kratschmer, S Engelmann, ... Science advances 4 (8), eaat2355, 2018 | 174 | 2018 |
| Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond S Bangsaruntip, K Balakrishnan, SL Cheng, J Chang, M Brink, I Lauer, ... 2013 IEEE international electron devices meeting, 20.2. 1-20.2. 4, 2013 | 120 | 2013 |
| A novel approach to photonic packaging leveraging existing high-throughput microelectronic facilities T Barwicz, Y Taira, TW Lichoulas, N Boyer, Y Martin, H Numata, JW Nah, ... IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 455-466, 2016 | 115 | 2016 |
| Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein Journal of Vacuum Science & Technology A 34 (1), 2016 | 114 | 2016 |
| An O-band metamaterial converter interfacing standard optical fibers to silicon nanophotonic waveguides T Barwicz, A Janta-Polczynski, M Khater, Y Thibodeau, R Leidy, J Maling, ... Optical Fiber Communication Conference, Th3F. 3, 2015 | 105 | 2015 |
| Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node JB Chang, M Guillorn, PM Solomon, CH Lin, SU Engelmann, A Pyzyna, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 12-13, 2011 | 94 | 2011 |
| Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation D Nest, DB Graves, S Engelmann, RL Bruce, F Weilnboeck, GS Oehrlein, ... Applied Physics Letters 92 (15), 2008 | 80 | 2008 |
| Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕ Ar discharges and energetic ion beams S Engelmann, RL Bruce, T Kwon, R Phaneuf, GS Oehrlein, YC Bae, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 79 | 2007 |
| Study of ion and vacuum ultraviolet-induced effects on styrene-and ester-based polymers exposed to argon plasma RL Bruce, S Engelmann, T Lin, T Kwon, RJ Phaneuf, GS Oehrlein, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 77 | 2009 |
| Understanding the roughening and degradation of 193 nm photoresist during plasma processing: synergistic roles of vacuum ultraviolet radiation and ion bombardment D Nest, TY Chung, DB Graves, S Engelmann, RL Bruce, F Weilnboeck, ... Plasma processes and polymers 6 (10), 649-657, 2009 | 72 | 2009 |
| Nanowire FET with trapezoid gate structure JW Sleight, S Bangsaruntip, SU Engelmann, Y Zhang US Patent 8,298,881, 2012 | 68 | 2012 |
| Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation JJ Vegh, D Nest, DB Graves, R Bruce, S Engelmann, T Kwon, RJ Phaneuf, ... Applied Physics Letters 91 (23), 2007 | 67 | 2007 |
| Studies of plasma surface interactions during short time plasma etching of 193 and 248nm photoresist materials X Hua, S Engelmann, GS Oehrlein, P Jiang, P Lazzeri, E Iacob, M Anderle Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 62 | 2006 |
| An integrated silicon photonics technology for O-band datacom NB Feilchenfeld, FG Anderson, T Barwicz, S Chilstedt, Y Ding, ... 2015 IEEE International Electron Devices Meeting (IEDM), 25.7. 1-25.7. 4, 2015 | 60 | 2015 |
| Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching SU Engelmann, RL Bruce, M Nakamura, D Metzler, SG Walton, ... ECS Journal of Solid State Science and Technology 4 (6), N5054, 2015 | 59 | 2015 |
| Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry F Weilnboeck, RL Bruce, S Engelmann, GS Oehrlein, D Nest, TY Chung, ... Journal of Vacuum Science & Technology B 28 (5), 993-1004, 2010 | 59 | 2010 |
