| Negative luminescence from In1− xAlxSb and CdxHg1− xTe diodes T Ashley, CT Elliott, NT Gordon, RS Hall, AD Johnson, GJ Pryce Infrared physics & technology 36 (7), 1037-1044, 1995 | 76 | 1995 |
| Uncooled InSb/In1−xAlxSb mid‐infrared emitter T Ashley, CT Elliott, NT Gordon, RS Hall, AD Johnson, GJ Pryce Applied physics letters 64 (18), 2433-2435, 1994 | 75 | 1994 |
| Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices CT Elliott, NT Gordon, RS Hall, TJ Phillips, AM White, CL Jones, ... Journal of Electronic Materials 25 (8), 1139-1145, 1996 | 72 | 1996 |
| Reverse breakdown in long wavelength lateral collection CdxHg1−xTe diodes CT Elliott, NT Gordon, RS Hall, G Crimes Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (2 …, 1990 | 61 | 1990 |
| Back contacts materials used in thin film CdTe solar cells—A review RS Hall, D Lamb, SJC Irvine Energy Science & Engineering 9 (5), 606-632, 2021 | 54 | 2021 |
| 1/f noise studies in uncooled narrow gap Hg1− xCdxTe non-equilibrium diodes CT Elliott, NT Gordon, RS Hall, TJ Phillips, CL Jones, A Best Journal of Electronic Materials 26 (6), 643-648, 1997 | 52 | 1997 |
| High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates DJ Hall, L Buckle, NT Gordon, J Giess, JE Hails, JW Cairns, RM Lawrence, ... Applied physics letters 85 (11), 2113-2115, 2004 | 47 | 2004 |
| Applications of negative luminescence T Ashley, CT Elliott, NT Gordon, TJ Phillips, RS Hall Infrared physics & technology 38 (3), 145-151, 1997 | 43 | 1997 |
| Room temperature narrow gap semiconductor diodes as sources and detectors in the 5–10 μm wavelength region T Ashley, CT Elliott, NT Gordon, RS Hall, AD Johnson, GJ Pryce Journal of crystal growth 159 (1-4), 1100-1103, 1996 | 36 | 1996 |
| Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures OJ Pooley, AM Gilbertson, PD Buckle, RS Hall, L Buckle, MT Emeny, ... New Journal of Physics 12 (5), 053022, 2010 | 28 | 2010 |
| Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes RS Hall, NT Gordon, J Giess, JE Hails, A Graham, DC Herbert, DJ Hall, ... Infrared Technology and Applications XXXI 5783, 412-423, 2005 | 28 | 2005 |
| MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band NT Gordon, RS Hall, CL Jones, CD Maxey, NE Metcalfe, RA Catchpole, ... Journal of Electronic Materials 29 (6), 818-822, 2000 | 27 | 2000 |
| Room‐temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes T Ashley, CT Elliott, NR Gordon, RS Hall, CD Maxey, BE Matthews Applied physics letters 65 (18), 2314-2316, 1994 | 26 | 1994 |
| Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1− xSb heterostructures OJ Pooley, AM Gilbertson, PD Buckle, RS Hall, MT Emeny, M Fearn, ... Semiconductor Science and Technology 25 (12), 125005, 2010 | 22 | 2010 |
| Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates DJ Hall, L Buckle, NT Gordon, J Giess, JE Hails, JW Cairns, RM Lawrence, ... Infrared Technology and Applications XXX 5406, 317-322, 2004 | 18 | 2004 |
| Effect of device processing on 1/f noise in uncooled, Auger-suppressed CdHgTe diodes CL Jones, NE Metcalfe, A Best, R Catchpole, CD Maxey, NT Gordon, ... Journal of electronic materials 27 (6), 733-739, 1998 | 18 | 1998 |
| Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg1-xCdxTe CT Elliott, NT Gordon, RS Hall, TJ Phillips, CL Jones, BE Matthews, ... Infrared Technology XX 2269, 648-657, 1994 | 18 | 1994 |
| Thermal sensing system having a fast response calibration device T Ashley, CT Elliott, NT Gordon, RS Hall US Patent 6,127,679, 2000 | 14 | 2000 |
| Improved control of composition and electrical properties of liquid phase epitaxial (CdHg) Te layers MG Astles, N Shaw, G Blackmore, RS Hall Journal of crystal growth 117 (1-4), 213-217, 1992 | 10 | 1992 |
| Thermal imaging system T Ashley, CT Elliott, NT Gordon, RS Hall US Patent 6,175,113, 2001 | 8 | 2001 |
Neil T. GordonAston Institute of Photonic Technology, Aston University在 aston.ac.uk 的电子邮件经过验证
