| Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam RSC advances 8 (62), 35528-35533, 2018 | 39 | 2018 |
| Efficiency improvement of deep‐ultraviolet light emitting diodes with gradient electron blocking layers B So, J Kim, E Shin, T Kwak, T Kim, O Nam physica status solidi (a) 215 (10), 1700677, 2018 | 35 | 2018 |
| Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method J Kim, U Choi, J Pyeon, B So, O Nam Scientific reports 8 (1), 935, 2018 | 28 | 2018 |
| Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition T Kwak, J Lee, B So, U Choi, O Nam Journal of Crystal Growth 510, 50-55, 2019 | 25 | 2019 |
| Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate T Kwak, J Lee, U Choi, B So, G Yoo, S Kim, O Nam Diamond and Related Materials 114, 108335, 2021 | 18 | 2021 |
| The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor U Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam physica status solidi (a) 217 (7), 1900694, 2020 | 15 | 2020 |
| Large area deep ultraviolet light of Al0. 47Ga0. 53N/Al0. 56Ga0. 44N multi quantum well with carbon nanotube electron beam pumping ST Yoo, B So, HI Lee, O Nam, K Chang Park AIP Advances 9 (7), 2019 | 14 | 2019 |
| Phys. Status Solidi (A) Appl HW Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam Mater. Sci 217, 1900694, 2020 | 13 | 2020 |
| Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate K Ko, K Lee, B So, C Heo, K Lee, T Kwak, SW Han, HY Cha, O Nam Japanese Journal of Applied Physics 56 (1), 015502, 2016 | 12 | 2016 |
| Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy S Woo, M Kim, B So, G Yoo, J Jang, K Lee, O Nam Journal of crystal growth 407, 6-10, 2014 | 11 | 2014 |
| Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy Y Won, B So, S Woo, D Lee, M Kim, K Nam, S Im, KB Shim, O Nam Journal of Ceramic Processing Research 15 (2), 61-65, 2014 | 11 | 2014 |
| Large-area far ultraviolet-C emission of Al0. 73Ga0. 27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping J Lee, ST Yoo, B So, KC Park, O Nam Thin Solid Films 711, 138292, 2020 | 7 | 2020 |
| Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, ... physica status solidi (a) 217 (7), 1900695, 2020 | 7 | 2020 |
| Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity J Lee, H Jang, T Kwak, U Choi, B So, O Nam Solid-State Electronics 165, 107751, 2020 | 7 | 2020 |
| Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer B So, C Cheon, J Lee, J Lee, T Kwak, U Choi, JD Song, J Chang, O Nam Thin Solid Films 708, 138103, 2020 | 5 | 2020 |
| Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, ... Japanese Journal of Applied Physics 58 (12), 121003, 2019 | 5 | 2019 |
| Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses T Kim, B So, J Lee, O Nam Thin Solid Films 680, 31-36, 2019 | 5 | 2019 |
| Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition T Kwak, J Lee, G Yoo, H Shin, U Choi, B So, S Kim, O Nam physica status solidi (a) 217 (12), 1900973, 2020 | 4 | 2020 |
| Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam AIP Advances 11 (4), 2021 | 3 | 2021 |
| Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method J Lee, H Jang, T Kwak, U Choi, B So, O Nam physica status solidi (a) 217 (7), 1900722, 2020 | 3 | 2020 |
Okhyun NamTU KOREA (Tech University of Korea)在 tukorea.ac.kr 的电子邮件经过验证
