Chamseddine Bouhafs 个人学术档案

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	总计	2019 年至今
引用	199	126
h 指数	7	7
i10 指数	7	4

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Vanya DarakchievaLinkoping University在 ifm.liu.se 的电子邮件经过验证
Mathias SchubertUniversity of Nebraska-Lincoln在 engr.unl.edu 的电子邮件经过验证
Alexei ZakharovReseacher, MAX-laboratory在 maxiv.lu.se 的电子邮件经过验证
Tino HofmannUniversity of North Carolina at Charlotte在 uncc.edu 的电子邮件经过验证
Camilla ColettiCenter for Nanotechnology Innovation CNI@NEST, Center Coordinator在 iit.it 的电子邮件经过验证
Jens ErikssonLinköping University在 ifm.liu.se 的电子邮件经过验证
Ivan G. IvanovAssociate professor in physics, Linköping University在 liu.se 的电子邮件经过验证
Ingemar PerssonThin Film Physics, Linköping University, Sweden在 liu.se 的电子邮件经过验证
Per O.Å. PerssonLinköping University在 liu.se 的电子邮件经过验证
chtourou radhouaneProfesseur在 crten.rnrt.tn 的电子邮件经过验证
N. Ben SedrineAveiro (Portugal), Linköping (Sweden), Lisbon (Portugal), Tunis (Tunisia)在 ua.pt 的电子邮件经过验证
Jean-Christophe Harmand在 c2n.upsaclay.fr 的电子邮件经过验证
Sergio PezziniNEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore在 nano.cnr.it 的电子邮件经过验证
Vaidotas MišeikisTechnologist, Italian Institute of Technology在 iit.it 的电子邮件经过验证
Filippo GiannazzoCNR, Istituto per la Microelettronica e i Microsistemi, Catania, Italy在 imm.cnr.it 的电子邮件经过验证
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi在 imm.cnr.it 的电子邮件经过验证
Johanna RosenLinköping University在 liu.se 的电子邮件经过验证

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Chamseddine Bouhafs

INESC Microsistemas e Nanotecnologias

在 inesc-mn.pt 的电子邮件经过验证

Graphene Semiconductor Materials Raman spectroscopy chemical vapor deposition sputtering


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Morphological and electronic properties of epitaxial graphene on SiC R Yakimova, T Iakimov, GR Yazdi, C Bouhafs, J Eriksson, A Zakharov, ... Physica B: Condensed Matter 439, 54-59, 2014	42	2014
Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper C Bouhafs, S Pezzini, FR Geisenhof, N Mishra, V Mišeikis, Y Niu, ... Carbon 177, 282-290, 2021	30	2021
Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC C Bouhafs, AA Zakharov, IG Ivanov, F Giannazzo, J Eriksson, V Stanishev, ... Carbon 116, 722-732, 2017	26	2017
Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC (000-1) C Bouhafs, V Darakchieva, IL Persson, A Tiberj, PO Persson, M Paillet, ... Journal of Applied Physics 117 (8), 2015	24	2015
Effect of nitrogen on the GaAs0. 9− xNxSb0. 1 dielectric function from the near-infrared to the ultraviolet N Ben Sedrine, C Bouhafs, JC Harmand, R Chtourou, V Darakchieva Applied Physics Letters 97 (20), 2010	20	2010
Decoupling and ordering of multilayer graphene on C-face 3C-SiC (111) C Bouhafs, V Stanishev, AA Zakharov, T Hofmann, P Kühne, T Iakimov, ... Applied Physics Letters 109 (20), 2016	15	2016
Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies N Armakavicius, C Bouhafs, V Stanishev, P Kühne, R Yakimova, S Knight, ... Applied Surface Science 421, 357-360, 2017	13	2017
Stacking Relations and Substrate Interaction of Graphene on Copper Foil P Schädlich, F Speck, C Bouhafs, N Mishra, S Forti, C Coletti, T Seyller Advanced Materials Interfaces, 2002025, 2021	7	2021
Critical view on buffer layer formation and monolayer graphene properties in high-temperature sublimation V Stanishev, N Armakavicius, C Bouhafs, C Coletti, P Kühne, IG Ivanov, ... Applied Sciences 11 (4), 1891, 2021	5	2021
Optical properties of GaAs0. 9-xNxSb0. 1 alloy films studied by spectroscopic ellipsometry NB Sedrine, C Bouhafs, M Schubert, JC Harmand, R Chtourou, ... Thin Solid Films 519 (9), 2838-2842, 2011	5	2011
Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect N Armakavicius, P Kühne, J Eriksson, C Bouhafs, V Stanishev, IG Ivanov, ... Carbon 172, 248-259, 2021	4	2021
Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC I Persson, N Armakavicius, C Bouhafs, V Stanishev, P Kühne, T Hofmann, ... APL Materials 8 (1), 2020	4	2020
Structural and Electronic Properties of Graphene on 4H-and 3C-SiC C Bouhafs Linköping University Electronic Press, 2016	4	2016

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