| Short-channel effects in tunnel FETs J Wu, J Min, Y Taur IEEE Transactions on Electron Devices 62 (9), 3019-3024, 2015 | 111 | 2015 |
| Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain J Wu, Y Taur IEEE Transactions on Electron Devices, 2016 | 72 | 2016 |
| A Short-Channel – Model for 2-D MOSFETs Y Taur, J Wu, J Min IEEE Transactions on Electron Devices 63 (6), 2550-2555, 2016 | 62 | 2016 |
| An analytic model for heterojunction tunnel FETs with exponential barrier Y Taur, J Wu, J Min IEEE Transactions on Electron Devices 62 (5), 1399-1404, 2015 | 56 | 2015 |
| Analysis of source doping effect in tunnel FETs with staggered bandgap J Min, J Wu, Y Taur IEEE Electron Device Letters 36 (10), 1094-1096, 2015 | 53 | 2015 |
| Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide AJ Kerr, E Chagarov, S Gu, T Kaufman-Osborn, S Madisetti, J Wu, ... The Journal of chemical physics 141 (10), 104702, 2014 | 30 | 2014 |
| Dimensionality Dependence of TFET Performance Down to 0.1 V Supply Voltage Y Taur, J Wu, J Min IEEE Transactions on Electron Devices 63 (2), 877-880, 2016 | 21 | 2016 |
| A Continuous Semianalytic Current Model for DG and NW TFETs J Wu, Y Taur IEEE Transactions on Electron Devices 63 (2), 841 - 847, 2016 | 17 | 2016 |
| Normally-OFF AlGaN/GaN MOS-HEMT with a two-step gate recess J Wu, W Lu, KL Paul 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 13 | 2015 |
| High-fidelity quantum memory realized via Wigner crystals of polar molecules X Peng, W Jian-Zhi Chinese Physics B 21 (1), 010308, 2012 | 13 | 2012 |
| Thermal Resistance Extraction of AlGaN/GaN Depletion-Mode HEMTs on Diamond J Wu, J Min, W Lu, PKL Yu Journal of Electronic Materials 44 (5), 1275-1280, 2015 | 12 | 2015 |
| Examination of Two-Band E (k) Relations for Band-to-Band Tunneling Y Taur, J Wu IEEE Transactions on Electron Devices 63 (2), 869 - 872, 2016 | 8 | 2016 |
| Select line voltage waveform real-time monitor for non-volatile memory J Wu, X Yang US Patent 10,910,060, 2021 | 5 | 2021 |
| Single pulse verification of memory cells X Yang, HY Tseng, D Dutta, J Wu, GJ Hemink US Patent 10,535,412, 2020 | 5 | 2020 |
| Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors J Min, LD Wang, J Wu, PM Asbeck IEEE Journal of the Electron Devices Society 4 (6), 416-423, 2016 | 5 | 2016 |
| An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states J Wu, J Min, J Ji, Y Taur 2015 73rd Annual Device Research Conference (DRC), 249-250, 2015 | 4 | 2015 |
| Dynamic bit line voltage and sensing time enhanced read for data recovery J Wu, X Yang US Patent 10,741,257, 2020 | 1 | 2020 |
| Power saving and fast read sequence for non-volatile memory J Wu, J Li, Y Wang US Patent App. 17/135,071, 2022 | | 2022 |
| Positive feedback and parallel searching enhanced optimal read method for non-volatile memory J Wu, X Yang US Patent App. 16/654,696, 2021 | | 2021 |
| Mitigating grown bad blocks J Wu, X Yang, J Wan US Patent 10,978,160, 2021 | | 2021 |
Xiang YangSanDisk Corp., University of Pennsylvania在 sandisk.com 的电子邮件经过验证
Xiang YangSanDisk Corp., University of Pennsylvania在 sandisk.com 的电子邮件经过验证