| Vertical MoS2 transistors with sub-1-nm gate lengths F Wu, H Tian, Y Shen, Z Hou, J Ren, G Gou, Y Sun, Y Yang, TL Ren Nature 603 (7900), 259-264, 2022 | 399 | 2022 |
| Graphene-based wearable sensors Y Qiao, X Li, T Hirtz, G Deng, Y Wei, M Li, S Ji, Q Wu, J Jian, F Wu, Y Shen, ... Nanoscale 11 (41), 18923-18945, 2019 | 134 | 2019 |
| Ultrafast photodetector by integrating perovskite directly on silicon wafer X Geng, F Wang, H Tian, Q Feng, H Zhang, R Liang, Y Shen, Z Ju, ... ACS nano 14 (3), 2860-2868, 2020 | 114 | 2020 |
| The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li, J Tang, J Liu, X Wu, H Tian, ... Advanced Materials 34 (48), 2201916, 2022 | 67 | 2022 |
| Black phosphorus junctions and their electrical and optoelectronic applications N Deng, H Tian, J Zhang, J Jian, F Wu, Y Shen, Y Yang, TL Ren Journal of Semiconductors 42 (8), 081001, 2021 | 35 | 2021 |
| High thermal conductivity 2D materials: From theory and engineering to applications F Wu, H Tian, Y Shen, ZQ Zhu, Y Liu, T Hirtz, R Wu, G Gou, Y Qiao, ... Advanced Materials Interfaces 9 (21), 2200409, 2022 | 33 | 2022 |
| Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction F Wu, H Tian, Z Yan, J Ren, T Hirtz, G Gou, Y Shen, Y Yang, TL Ren ACS Applied Materials & Interfaces 13 (22), 26161-26169, 2021 | 28 | 2021 |
| Ferroelectric‐like behavior in TaN/High‐k/Si system based on amorphous oxide Z Feng, Y Peng, Y Shen, Z Li, H Wang, X Chen, Y Wang, M Jing, F Lu, ... Advanced Electronic Materials 7 (10), 2100414, 2021 | 20 | 2021 |
| Simulation of MoS2 stacked nanosheet field effect transistor Y Shen, H Tian, T Ren Journal of Semiconductors 43 (8), 082002, 2022 | 6 | 2022 |
| The insight and evaluation of ultra-scaled sub-1 nm gate length transistors H Tian, Y Shen, Z Yan, Y Liu, F Wu, TL Ren Microelectronic Engineering 273, 111963, 2023 | 5 | 2023 |
| In situ isotope study of indium diffusion in InP/Al2O3 stacks Z Feng, X Qin, X Chen, Z Li, R Huang, Y Shen, D Ding, Y Wang, M Jing, ... Applied Physics Letters 120 (3), 2022 | 5 | 2022 |
| Ambipolar transport compact models for two-dimensional materials based field-effect transistors Z Yan, G Gou, J Ren, F Wu, Y Shen, H Tian, Y Yang, TL Ren Tsinghua Science and Technology 26 (5), 574-591, 2021 | 4 | 2021 |
| Quasi-fermi-level phase space and its applications in ambipolar two-dimensional field-effect transistors ZY Yan, KH Xue, Z Hou, Y Shen, H Tian, Y Yang, TL Ren Physical Review Applied 17 (5), 054027, 2022 | 3 | 2022 |
| Transistor Subthreshold Swing Lowered by 2-D Heterostructures F Wu, H Tian, Z Yan, Y Shen, J Ren, Y Yang, TL Ren IEEE Transactions on Electron Devices 68 (1), 411-414, 2020 | 3 | 2020 |
| Thermal Stability Study of GaP/High‐k Dielectrics Interfaces X Wang, Y Zhao, R Huang, F Li, X Lu, Z Huang, Y Shen, H Wang, D Shao, ... Advanced Materials Interfaces 4 (20), 1700609, 2017 | 3 | 2017 |
| High Thermal Conductivity 2D Materials: From Theory and Engineering to Applications (Adv. Mater. Interfaces 21/2022) F Wu, H Tian, Y Shen, ZQ Zhu, Y Liu, T Hirtz, R Wu, G Gou, Y Qiao, ... Advanced Materials Interfaces 9 (21), 2270116, 2022 | 2 | 2022 |
| Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications Y Shen, H Tian, Y Liu, F Wu, Z Yan, T Hirtz, X Wang, TL Ren Frontiers in Physics 9, 777691, 2021 | 2 | 2021 |
| Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al2O3 Interface Induced by Titanium Layer Z Feng, Y Sun, Y Sun, X Chen, Y Shen, R Huang, Z Li, H Wang, D Ding, ... Advanced Materials Interfaces 9 (4), 2101238, 2022 | 1 | 2022 |
| Ultimate 0.34 nm gate-length side-wall transistors with atomic level channel TL Ren, F Wu, Y Shen, H Tian, J Ren, G Gou, Y Yang | 1 | 2020 |
| Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials L Qin, H Tian, P Zhang, Z Liu, Y Shen, X Wu, TL Ren ACS Applied Electronic Materials 6 (10), 7430-7438, 2024 | | 2024 |
