| Broadband black-phosphorus photodetectors with high responsivity M Huang, M Wang, C Chen, Z Ma, X Li, J Han, Y Wu Adv. Mater 28 (18), 3481-3485, 2016 | 453 | 2016 |
| Multifunctional high-performance van der Waals heterostructures M Huang, S Li, Z Zhang, X Xiong, X Li, Y Wu Nature nanotechnology 12 (12), 1148-1154, 2017 | 333 | 2017 |
| Nanometre-thin indium tin oxide for advanced high-performance electronics S Li, M Tian, Q Gao, M Wang, T Li, Q Hu, X Li, Y Wu Nature materials 18 (10), 1091-1097, 2019 | 274 | 2019 |
| Scalable high performance radio frequency electronics based on large domain bilayer MoS2 XLYW Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song Nature Communications 9, 4778, 2018 | 124 | 2018 |
| Reconfigurable logic‐in‐memory and multilingual artificial synapses based on 2D heterostructures X Xiong, J Kang, Q Hu, C Gu, T Gao, X Li, Y Wu Advanced Functional Materials 30 (11), 1909645, 2020 | 111 | 2020 |
| Performance Potential and Limit of MoS2 Transistors X Li, L Yang, M Si, S Li, M Huang, P Ye, Y Wu Advanced Materials 27 (9), 1547-1552, 2015 | 110 | 2015 |
| High-speed black phosphorus field-effect transistors approaching ballistic limit X Li, Z Yu, X Xiong, T Li, T Gao, R Wang, R Huang, Y Wu Science advances 5 (6), eaau3194, 2019 | 93 | 2019 |
| A transverse tunnelling field-effect transistor made from a van der Waals heterostructure X Xiong, M Huang, B Hu, X Li, F Liu, S Li, M Tian, T Li, J Song, Y Wu Nature Electronics 3 (2), 106-112, 2020 | 85 | 2020 |
| Effects of nitrogen and hydrogen codoping on the electrical performance and reliability of InGaZnO thin-film transistors A Abliz, Q Gao, D Wan, X Liu, L Xu, C Liu, C Jiang, X Li, H Chen, T Guo, ... ACS Applied Materials & Interfaces 9 (12), 10798-10804, 2017 | 66 | 2017 |
| Effect of Dielectric Interface on the Performance of MoS2 Transistors X Li, X Xiong, T Li, S Li, Z Zhang, Y Wu ACS applied materials & interfaces 9 (51), 44602-44608, 2017 | 50 | 2017 |
| Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- Dielectric Q Hu, S Li, T Li, X Wang, X Li, Y Wu IEEE Electron Device Letters 39 (9), 1377-1380, 2018 | 47 | 2018 |
| High-performance transistors based on monolayer CVD MoS2 grown on molten glass Z Zhang, X Xu, J Song, Q Gao, S Li, Q Hu, X Li, Y Wu Applied Physics Letters 113 (20), 2018 | 43 | 2018 |
| High-performance flexible ZnO thin-film transistors by atomic layer deposition M Wang, X Li, X Xiong, J Song, C Gu, D Zhan, Q Hu, S Li, Y Wu IEEE Electron Device Letters 40 (3), 419-422, 2019 | 39 | 2019 |
| High performance black phosphorus electronic and photonic devices with HfLaO dielectric X Xiong, X Li, M Huang, T Li, T Gao, Y Wu IEEE Electron Device Letters 39 (1), 127-130, 2017 | 36 | 2017 |
| Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors M Si, JJ Gu, X Wang, J Shao, X Li, MJ Manfra, RG Gordon, PD Ye Applied Physics Letters 102 (9), 2013 | 34 | 2013 |
| High field transport of high performance black phosphorus transistors T Li, Z Zhang, X Li, M Huang, S Li, S Li, Y Wu Applied Physics Letters 110 (16), 2017 | 33 | 2017 |
| 10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility S Li, C Gu, X Li, R Huang, Y Wu 2020 IEEE International Electron Devices Meeting (IEDM), 40.5. 1-40.5. 4, 2020 | 32 | 2020 |
| Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors X Li, Y Du, M Si, L Yang, S Li, T Li, X Xiong, P Ye, Y Wu Nanoscale 8 (6), 3572-3578, 2016 | 31 | 2016 |
| Optimized transport properties in lithium doped black phosphorus transistors T Gao, X Li, X Xiong, M Huang, T Li, Y Wu IEEE Electron Device Letters 39 (5), 769-772, 2018 | 29 | 2018 |
| Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO as Gate Dielectric S Li, Q Hu, X Wang, T Li, X Li, Y Wu IEEE Electron Device Letters 40 (2), 295-298, 2018 | 27 | 2018 |
