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Dr. Avra Sankar Bandyopadhyay
Dr. Avra Sankar Bandyopadhyay
Intel Corporation, Hillsboro, Oregon
在 intel.com 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Quantum Multibody Interactions in Halide-Assisted Vapor-Synthesized Monolayer WSe2 and Its Integration in a High Responsivity Photodetector with Low-Interface …
AS Bandyopadhyay, N Adhikari, AB Kaul
Chemistry of Materials 31 (23), 9861-9874, 2019
412019
Light–matter interactions in two-dimensional layered WSe2 for gauging evolution of phonon dynamics
AS Bandyopadhyay, C Biswas, AB Kaul
Beilstein Journal of Nanotechnology 11, 782-797, 2020
252020
A photo-capacitive sensor operational from 6 K to 350 K with a solution printable, thermally-robust hexagonal boron nitride (h-BN) dielectric and conductive graphene electrodes
JA Desai, A Bandyopadhyay, M Min, G Saenz, AB Kaul
Applied Materials Today 20, 100660, 2020
232020
Role of metal contacts and effect of annealing in high performance 2D WSe2 field-effect transistors
AS Bandyopadhyay, GA Saenz, AB Kaul
Surface and Coatings Technology 381, 125084, 2020
232020
Vibrational spectroscopy on solution-dispersed MoS2 for inkjet-printed photodetectors
RF Hossain, AS Bandyopadhyay, AB Kaul
Emergent Materials 5 (2), 477-487, 2022
42022
Nanoscale Characterization of WSe2 for Opto-electronics Applications
N Adhikari, A Bandyopadhyay, A Kaul
MRS Advances 2 (60), 3715-3720, 2017
42017
Spectroscopic, structural, and strain-dependent analysis of suspended bulk WSe2 sheets
AS BAndyopadhyay, AB Kaul
Journal of Vacuum Science & Technology B 40 (2), 022202, 2022
22022
Emission spectra and strain-dependent properties of flexible inkjet printed WSe 2–graphene heterostructure photodetectors
RF Hossain, AS Bandyopadhyay, N Adhikari, S Aryal, AB Kaul
Journal of Materials Chemistry C 12 (20), 7176-7187, 2024
12024
Ti-contacted halide-assisted CVD grown WSe2 monolayers for high performance photodetectors
K Jayanand, AS Bandyopadhyay, AB Kaul
Physics and Simulation of Optoelectronic Devices XXIX 11680, 110-117, 2021
12021
Many-body Interactions in Halide-assisted CVD Grown WSe2 for High Performance Photodetectors
AS Bandyopadhyay, K Jayanand, AB Kaul
2020 IEEE 15th international conference on nano/micro engineered and …, 2020
12020
Electrical and Optoelectronic Properties Analysis in Two-dimensional Multilayer WSe2 Phototransistor for High Speed Device Applications
AS Bandyopadhyay, K Jayanand, AB Kaul
2020 IEEE 15th international conference on nano/micro engineered and …, 2020
12020
Quantum Multi-Body Interactions in Semiconducting WSe2 and C60-Graphene Hybrids for High-Performance Photodetectors
AB Kaul, AS Bandyopadhyay, K Jayanand
ECS Transactions 97 (4), 59, 2020
12020
Electrical and charge trapping properties of HfO2/Al2O3 bilayer gate dielectrics on In0.53Ga0.47As substrates
AK Ghosh, T Das, C Mukherjee, AS Bandyopadhyay, GK Dalapati, D Chi, ...
2012 19th IEEE International Symposium on the Physical and Failure Analysis …, 2012
12012
Intrinsic and Strain-Dependent Properties of Suspended WSe2 Crystallites toward Next-Generation Nanoelectronics and Quantum-Enabled Sensors
AS Bandyopadhyay, AB Puthirath, PM Ajayan, H Zhu, Y Lin, AB Kaul
ACS Applied Materials & Interfaces 16 (3), 3640-3653, 2024
2024
Salt-Assisted Chemical Vapor Deposition Synthesis of 2D WSe2 and Its Integration in High Performance Field-Effect Transistors
AB Kaul, AS Bandyopadhyay
TMS 2022 151st Annual Meeting & Exhibition Supplemental Proceedings, 521-529, 2022
2022
Photocurrent enhancement of CVD MoS2 photodetector via nanoplasmonics
GA Saenz, CF de Anda Orea, AS Bandyopadhyay, AB Kaul
Image Sensing Technologies: Materials, Devices, Systems, and Applications VI …, 2019
2019
Enhancement of optical properties by incorporating Au quantum dots in CVD WSe2 based photodetector
AS Bandyopadhyay, AB Kaul
Energy Harvesting and Storage: Materials, Devices, and Applications IX 10979 …, 2019
2019
Characterization of Few layer Tungsten diselenide based FET under Thermal Excitation
AS Bandyopadhyay, GA Saenz, A Kaul
MRS Advances 2 (60), 3721-3726, 2017
2017
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