| Prediction of bond wire fatigue of IGBTs in a PV inverter under a long-term operation PD Reigosa, H Wang, Y Yang, F Blaabjerg IEEE Transactions on Power Electronics 31 (10), 7171-7182, 2015 | 283 | 2015 |
| A short-circuit safe operation area identification criterion for SiC MOSFET power modules PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016 | 108 | 2016 |
| A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis L Ceccarelli, PD Reigosa, F Iannuzzo, F Blaabjerg Microelectronics Reliability 76, 272-276, 2017 | 96 | 2017 |
| Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs PD Reigosa, F Iannuzzo, L Ceccarelli Microelectronics Reliability 88, 577-583, 2018 | 49 | 2018 |
| A humidity-dependent lifetime derating factor for DC film capacitors H Wang, PD Reigosa, F Blaabjerg 2015 IEEE Energy Conversion Congress and Exposition (ECCE), 3064-3068, 2015 | 49 | 2015 |
| Modern IGBT gate driving methods for enhancing reliability of high-power converters—An overview H Luo, F Iannuzzo, PD Reigosa, F Blaabjerg, W Li, X He Microelectronics Reliability 58, 141-150, 2016 | 42 | 2016 |
| Impact of repetitive short-circuit tests on the normal operation of SiC MOSFETs considering case temperature influence H Du, PD Reigosa, L Ceccarelli, F Iannuzzo IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 195-205, 2019 | 36 | 2019 |
| Implications of Ageing Through Power Cycling on the Short-Circuit Robustness of 1.2-kV SiC mosfets PD Reigosa, H Luo, F Iannuzzo IEEE Transactions on Power Electronics 34 (11), 11182-11190, 2019 | 33 | 2019 |
| Robustness of MW-Level IGBT modules against gate oscillations under short circuit events PD Reigosa, R Wu, F Iannuzzo, F Blaabjerg Microelectronics Reliability 55 (9-10), 1950-1955, 2015 | 28 | 2015 |
| Study on oscillations during short circuit of MW-scale IGBT power modules by means of a 6-kA/1.1-kV nondestructive testing system R Wu, PD Reigosa, F Iannuzzo, L Smirnova, H Wang, F Blaabjerg IEEE Journal of Emerging and Selected Topics in Power Electronics 3 (3), 756-765, 2015 | 28 | 2015 |
| Improving the short-circuit reliability in IGBTs: How to mitigate oscillations PD Reigosa, F Iannuzzo, M Rahimo, C Corvasce, F Blaabjerg IEEE Transactions on Power Electronics 33 (7), 5603-5612, 2017 | 26 | 2017 |
| Mission profile based sizing of IGBT chip area for PV inverter applications Y Shen, H Wang, Y Yang, PD Reigosa, F Blaabjerg 2016 IEEE 7th International Symposium on Power Electronics for Distributed …, 2016 | 23 | 2016 |
| Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions M Akbari, AS Bahman, PD Reigosa, F Iannuzzo, MT Bina Microelectronics Reliability 88, 1135-1140, 2018 | 21 | 2018 |
| Investigation on the short circuit safe operation area of SiC MOSFET power modules PD Reigosa, H Luo, F Iannuzzo, F Blaabjerg 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2016 | 21 | 2016 |
| Evidence of gate voltage oscillations during short circuit of commercial 1.7 kV/1 kA IGBT power modules PD Reigosa, R Wu, F Iannuzzo, F Blaabjerg Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 20 | 2015 |
| On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition H Luo, PD Reigosa, F Iannuzzo, F Blaabjerg Microelectronics Reliability 88, 563-567, 2018 | 19 | 2018 |
| Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions L Ceccarelli, PD Reigosa, AS Bahman, F Iannuzzo, F Blaabjerg IECON 2017-43rd Annual Conference of the IEEE Industrial Electronics Society …, 2017 | 16 | 2017 |
| Development of Simulink-based SiC MOSFET modeling platform for series connected devices G Tsolaridis, K Ilves, PD Reigosa, M Nawaz, F Iannuzzo 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-8, 2016 | 16 | 2016 |
| Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules H Du, PD Reigosa, F Iannuzzo, L Ceccarelli Microelectronics Reliability 88, 661-665, 2018 | 15 | 2018 |
| Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature PD Reigosa, F Iannuzzo, L Ceccarelli 2018 IEEE International Symposium on the Physical and Failure Analysis of …, 2018 | 15 | 2018 |
