| Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature S Boubanga-Tombet, S Chan, T Watanabe, A Satou, V Ryzhii, T Otsuji Graphene-Based Terahertz Electronics and Plasmonics, 539-554, 2020 | 233 | 2020 |
| In-situ Oxide, GaN interlayer based vertical trench MOSFET (OG-FET) on bulk GaN substrates C Gupta, C Lund, SH Chan, A Agarwal, J Liu, Y Enatsu, S Keller, ... IEEE Electron Device Letters 38 (3), 353-355, 2017 | 166 | 2017 |
| OG-FET: An In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET C Gupta, SH Chan, Y Enatsu, A Agarwal, S Keller, UK Mishra IEEE Electron Device Letters 37 (12), 1601-1604, 2016 | 80 | 2016 |
| Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ... Electron Device Meeting (IEDM), 2017 IEEE International, 2018 | 71 | 2018 |
| Large Area In-Situ Oxide, GaN Interlayer Based Vertical Trench MOSFET (OG-FET) D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ... IEEE Electron Device Letters 39 (5), 711 - 714, 2018 | 67 | 2018 |
| Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels C Gupta, S Chan, C Lund, A Agarwal, O Koksaldi, J Liu, Y Enatsu, ... Appl. Phys. Express 9 (12), 121001, 2016 | 58 | 2016 |
| On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, E Zanoni, ... Applied Physics Letters 108 (11), 112104, 2016 | 55 | 2016 |
| Solution-based stoichiometric control over charge transport in nanocrystalline CdSe devices DK Kim, AT Fafarman, BT Diroll, SH Chan, TR Gordon, CB Murray, ... ACS nano 7 (10), 8760-8770, 2013 | 53 | 2013 |
| First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET C Gupta, SH Chan, A Agarwal, N Hatui, S Keller, UK Mishra IEEE Electron Device Letters 38 (11), 1575-1578, 2017 | 45 | 2017 |
| Improved Dynamic Ron of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ... IEEE Electron Device Letters 39 (7), 1030 - 1033, 2018 | 32 | 2018 |
| Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage S Chowdhury, J Kim, C Gupta, S Keller, SH Chan, UK Mishra US Patent 10,312,361, 2019 | 31 | 2019 |
| Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ... Japanese Journal of Applied Physics 55, 021501, 2016 | 30 | 2016 |
| Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity X Liu, SH Chan, F Wu, Y Li, S Keller, JS Speck, UK Mishra Journal of Crystal Growth 408, 78-84, 2014 | 29 | 2014 |
| High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces SH Chan, S Keller, M Tahhan, H Li, B Romanczyk, SP DenBaars, ... Semiconductor Science and Technology 31 (6), 065008, 2016 | 26 | 2016 |
| Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra Journal of Vacuum Science & Technology A 34 (3), 031303, 2016 | 25 | 2016 |
| Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures H Li, S Keller, SH Chan, J Lu, SP Denbaars, UK Mishra Semiconductor Science and Technology 30 (5), 055015, 2015 | 21 | 2015 |
| Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN I Sayed, W Liu, S Chan, C Gupta, M Guidry, H Li, S Keller, U Mishra Applied Physics Letters 115 (3), 2019 | 18 | 2019 |
| InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays S Keller, C Lund, T Whyland, Y Hu, C Neufeld, S Chan, S Wienecke, F Wu, ... Semiconductor Science and Technology 30 (10), 105020, 2015 | 17 | 2015 |
| In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ... Applied Physics Letters 104 (26), 2014 | 17 | 2014 |
| Electro-thermal investigation of GaN vertical trench MOSFETs B Chatterjee, D Ji, A Agarwal, SH Chan, S Chowdhury, S Choi IEEE Electron Device Letters 42 (5), 723-726, 2021 | 16 | 2021 |
Stacia KellerUniversity of California Santa Barbara在 ece.ucsb.edu 的电子邮件经过验证
