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Timothy Yoo
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年份
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
JS Li, CC Chiang, X Xia, TJ Yoo, F Ren, H Kim, SJ Pearton
Applied Physics Letters 121 (4), 2022
832022
Annealing temperature dependence of band alignment of NiO/β-Ga2O3
X Xia, JS Li, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton
Journal of Physics D: Applied Physics 55 (38), 385105, 2022
412022
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV
JS Li, HH Wan, CC Chiang, X Xia, TJ Yoo, H Kim, F Ren, SJ Pearton
Crystals 13 (6), 886, 2023
252023
Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
T Yoo, X Xia, F Ren, A Jacobs, MJ Tadjer, S Pearton, H Kim
Applied Physics Letters 121 (7), 2022
212022
Thermal stability of band offsets of NiO/GaN
X Xia, JS Li, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton
Journal of Vacuum Science & Technology A 40 (5), 2022
62022
Breakdown up to 13.5 kV in NiO/β-Ga2O3 vertical heterojunction rectifiers
JS Li, HH Wan, CC Chiang, TJ Yoo, MH Yu, F Ren, H Kim, YT Liao, ...
ECS Journal of Solid State Science and Technology 13 (3), 035003, 2024
52024
Uniaxial magnetic anisotropy in three-bilayer Co/Cu and Co/Al superlattices
Y Xia, T Yoo, Y Xiang, Y Zhang, JJ Kim, TS Kuan, GC Wang
Thin Solid Films 681, 32-40, 2019
52019
NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current
JS Li, HH Wan, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton
Crystals 13 (12), 1624, 2023
32023
Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition
HH Wan, JS Li, CC Chiang, F Ren, TJ Yoo, H Kim, A Osinsky, F Alema, ...
Journal of Vacuum Science & Technology A 41 (5), 2023
32023
High-quality epitaxial thin films of topological kagome metal CoSn by magnetron sputtering
TR Thapaliya, T Yoo, S Hurtado Parra, ND Arndt, RF Need, JM Kikkawa, ...
Applied Physics Letters 119 (20), 2021
32021
Structural anisotropy in Sb thin films
P Adhikari, A Wijesinghe, A Rathore, TJ Yoo, G Kim, S Yeom, HT Lee, ...
APL Materials 12 (1), 2024
12024
E-mode AlGaN/GaN HEMTs using p-NiO gates
CC Chiang, HH Wan, JS Li, F Ren, TJ Yoo, H Kim, SJ Pearton
Journal of Vacuum Science & Technology B 41 (6), 2023
12023
Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600° C
X Xia, JS Li, CC Chiang, TJ Yoo, E Hershkovitz, F Ren, H Kim, J Kim, ...
Journal of Vacuum Science & Technology A 40 (6), 2022
12022
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers
JS Li, HH Wan, CC Chiang, TJ Yoo, MH Yu, F Ren, H Kim, YT Liao, ...
2024 Device Research Conference (DRC), 1-2, 2024
2024
E-Mode AlGaN/GaN HEMTs Using p-NiO Gates
CC Chiang, HH Wan, JS Li, F Ren, TJ Yoo, H Kim, SJ Pearton
ECS Transactions 113 (7), 45, 2024
2024
Control of the Structural Phases of Tin (Sn) thin films Through Lattice Engineering
C Edirisinghe, A Rathore, AH Chen, A Wijesinghe, P Adhikari, T Yoo, ...
Bulletin of the American Physical Society, 2024
2024
Unveiling Nanoscale Coherent Precipitates and their Strain Fields in NiTiHf-based Shape Memory Alloys Using 4D-STEM
E Hershkovitz, Y Yang, T Yoo, F da Cruz Gallo, MV Manuel, H Kim
Microscopy and Microanalysis 29 (Supplement_1), 332-333, 2023
2023
Conjoining Simple Supervised and Unsupervised Machine Learning Methods with 4D-STEM to Identify Complex Nanostructures
T Yoo, E Hershkovitz, X Pu, L He, H Kim
Microscopy and Microanalysis 29 (Supplement_1), 1959-1960, 2023
2023
Determination of Type II Band Alignment of NiO/α-Ga2O3 For Annealing Temperatures Up To 600° C
X Xia, JS Li, CC Chiang, TJ Yoo, E Hershkovitz, F Ren, H Kim, J Kim, ...
ECS Transactions 111 (2), 61, 2023
2023
4.7 Kv Reverse Breakdown Voltage Ultra-Thin Double-Layered NiO/β-Ga2O3 p-n Junction Rectifiers
JS Li, CC Chiang, X Xia, TJ Yoo, F Ren, H Kim, SJ Pearton
Electrochemical Society Meeting Abstracts 242, 1247-1247, 2022
2022
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