| Temperature-dependent photoconductivity in two-dimensional MoS2 transistors A Di Bartolomeo, A Kumar, O Durante, A Sessa, E Faella, L Viscardi, ... Materials Today Nano 24, 100382, 2023 | 49 | 2023 |
| Black phosphorus unipolar transistor, memory, and photodetector A Kumar, L Viscardi, E Faella, F Giubileo, K Intonti, A Pelella, S Sleziona, ... Journal of Materials Science 58 (6), 2689-2699, 2023 | 27 | 2023 |
| Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light E Faella, K Intonti, L Viscardi, F Giubileo, A Kumar, HT Lam, K Anastasiou, ... Nanomaterials 12 (11), 1886, 2022 | 26 | 2022 |
| Optoelectronic memory in 2D MoS2 field effect transistor A Kumar, E Faella, O Durante, F Giubileo, A Pelella, L Viscardi, K Intonti, ... Journal of Physics and Chemistry of Solids 179, 111406, 2023 | 25 | 2023 |
| Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure K Intonti, E Faella, L Viscardi, A Kumar, O Durante, F Giubileo, ... Advanced Electronic Materials 9 (8), 2300066, 2023 | 24 | 2023 |
| Temperature dependent black phosphorus transistor and memory A Kumar, L Viscardi, E Faella, F Giubileo, K Intonti, A Pelella, S Sleziona, ... Nano Express 4 (1), 014001, 2023 | 22 | 2023 |
| Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts L Viscardi, K Intonti, A Kumar, E Faella, A Pelella, F Giubileo, S Sleziona, ... physica status solidi (b) 260 (9), 2200537, 2023 | 16 | 2023 |
| Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2 K Intonti, E Faella, A Kumar, L Viscardi, F Giubileo, N Martucciello, ... ACS Applied Materials & Interfaces 15 (43), 50302-50311, 2023 | 10 | 2023 |
| Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory A Pelella, K Intonti, L Viscardi, O Durante, D Capista, M Passacantando, ... Journal of Physics and Chemistry of Solids 183, 111653, 2023 | 6 | 2023 |
| Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors A Kumar, K Intonti, L Viscardi, O Durante, A Pelella, O Kharsah, ... Materials Horizons 11 (10), 2397-2405, 2024 | 5 | 2024 |
| Multilayer WS2 for low-power visible and near-infrared phototransistors A Pelella, K Intonti, O Durante, A Kumar, L Viscardi, S De Stefano, ... Discover Nano 19 (1), 57, 2024 | 4 | 2024 |
| Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors L Viscardi, E Faella, K Intonti, F Giubileo, V Demontis, D Prete, V Zannier, ... Materials Science in Semiconductor Processing 173, 108167, 2024 | 3 | 2024 |
| Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures O Durante, K Intonti, L Viscardi, S De Stefano, E Faella, A Kumar, ... ACS Applied Nano Materials 6 (23), 21663-21670, 2023 | 2 | 2023 |
| Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures L Viscardi, O Durante, S De Stefano, K Intonti, A Kumar, A Pelella, ... Surfaces and Interfaces 49, 104445, 2024 | 1 | 2024 |
| The Second Quantum Revolution: Unexplored Facts and Latest News K Intonti, L Viscardi, V Lamberti, A Matteucci, B Micciola, M Modestino, ... Encyclopedia 4 (2), 630-671, 2024 | 1 | 2024 |
| n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory A Kumar, A Pelella, K Intonti, L Viscardi, O Durante, F Giubileo, P Romano, ... Advanced Electronic Materials, 2400010, 2024 | | 2024 |
| Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters. F Giubileo, E Faella, D Capista, M Passacantando, O Durante, A Kumar, ... Nanoscale, 2024 | | 2024 |
| Pressure-dependent photoconductivity in two dimensional ReS₂ K Intonti, E Faella, A Kumar, L Viscardi, F Giubileo, HT Lam, K Anastasiou, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 368-372, 2023 | | 2023 |
| Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature E Faella, L Viscardi, K Intonti, O Durante, A Pelella, MS Alghamdi, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 553-557, 2023 | | 2023 |
| InAs nanowire field-effect transistors: temperature dependence of electrical properties and digital electronic applications L Viscardi, E Faella, K Intonti, F Giubileo, V Demontis, D Prete, V Zannier, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 773-777, 2023 | | 2023 |
