| An SEU-tolerant DICE latch design with feedback transistors HB Wang, YQ Li, L Chen, LX Li, R Liu, S Baeg, N Mahatme, BL Bhuva, ... IEEE Transactions on Nuclear Science 62 (2), 548-554, 2015 | 48 | 2015 |
| Supply voltage dependence of heavy ion induced SEEs on 65 nm CMOS bulk SRAMs Q Wu, Y Li, L Chen, A He, G Guo, SH Baeg, H Wang, R Liu, L Li, SJ Wen, ... IEEE Transactions on Nuclear Science 62 (4), 1898-1904, 2015 | 38 | 2015 |
| Evaluation of SEU performance of 28-nm FDSOI flip-flop designs HB Wang, JS Kauppila, K Lilja, M Bounasser, L Chen, M Newton, YQ Li, ... IEEE Transactions on Nuclear Science 64 (1), 367-373, 2016 | 33 | 2016 |
| An area efficient stacked latch design tolerant to SEU in 28 nm FDSOI technology HB Wang, L Chen, R Liu, YQ Li, JS Kauppila, BL Bhuva, K Lilja, SJ Wen, ... IEEE Transactions on Nuclear Science 63 (6), 3003-3009, 2016 | 28 | 2016 |
| Single-event transient sensitivity evaluation of clock networks at 28-nm CMOS technology HB Wang, N Mahatme, L Chen, M Newton, YQ Li, R Liu, M Chen, ... IEEE Transactions on Nuclear Science 63 (1), 385-391, 2016 | 25 | 2016 |
| Single-event latchup in a 7-nm bulk FinFET technology DR Ball, CB Sheets, L Xu, J Cao, SJ Wen, R Fung, C Cazzaniga, ... IEEE Transactions on Nuclear Science 68 (5), 830-834, 2021 | 17 | 2021 |
| Electromigration effects in power grids characterized from a 65 nm test chip C Zhou, R Fung, SJ Wen, R Wong, CH Kim IEEE Transactions on Device and Materials Reliability 20 (1), 74-83, 2019 | 14 | 2019 |
| Single-event upsets in a 7-nm bulk FinFET technology with analysis of threshold voltage dependence JV D’Amico, DR Ball, J Cao, L Xu, M Rathore, SJ Wen, R Fung, ... IEEE Transactions on Nuclear Science 68 (5), 823-829, 2021 | 13 | 2021 |
| Analysis of advanced circuits for SET measurement R Liu, A Evans, Q Wu, Y Li, L Chen, SJ Wen, R Wong, R Fung 2015 IEEE International Reliability Physics Symposium, SE. 7.1-SE. 7.7, 2015 | 13 | 2015 |
| Characterizing electromigration effects in a 16nm FinFET process using a circuit based test vehicle N Pande, C Zhou, MH Lin, R Fung, R Wong, S Wen, CH Kim 2019 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2019 | 12 | 2019 |
| Comparison of CDM and CC-TLP robustness for an ultra-high speed interface IC J Weber, R Fung, R Wong, H Wolf, AH Gieser, L Maurer 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-9, 2018 | 11 | 2018 |
| Networking industry trends in ESD protection for high speed IOs R Wong, R Fung, SJ Wen 2013 IEEE 10th International Conference on ASIC, 1-4, 2013 | 11 | 2013 |
| A circuit-based approach for characterizing high frequency electromigration effects C Zhou, X Wang, R Fung, SJ Wen, R Wong, CH Kim IEEE Transactions on Device and Materials Reliability 17 (4), 763-772, 2017 | 10 | 2017 |
| Soft error characterization of D-FFs at the 5-nm bulk FinFET technology for the terrestrial environment Y Xiong, A Feeley, NJ Pieper, DR Ball, B Narasimham, J Brockman, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 7C. 3-1-7C. 3-7, 2022 | 9 | 2022 |
| Temperature dependence of single-event transient pulse widths for 7-nm bulk FinFET technology J Cao, L Xu, SJ Wen, R Fung, B Narasimham, LW Massengill, BL Bhuva 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 9 | 2020 |
| Charged device ESD threats with high speed RF interfaces P Tamminen, R Fung, R Wong 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-8, 2017 | 9 | 2017 |
| ESD characterization and design guidelines for interconnects in 28nm CMOS Z Dong, F Lu, L Wang, R Ma, C Zhang, H Zhao, A Wang, S Wen, R Wong, ... IEEE International Interconnect Technology Conference, 99-102, 2014 | 9 | 2014 |
| SE response of guard-gate FF in 16-and 7-nm bulk FinFET technologies J Cao, L Xu, BL Bhuva, R Fung, SJ Wen, C Cazzaniga, C Frost IEEE Transactions on Nuclear Science 67 (7), 1436-1442, 2020 | 8 | 2020 |
| Thermal neutron induced soft errors in 7-nm bulk FinFET node L Xu, J Cao, J Brockman, C Cazzaniga, C Frost, SJ Wen, R Fung, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 7 | 2020 |
| Characterization of ESD shielding materials with novel test methods T Viheriäkoski, R Wong, R Fung, P Tamminen Journal of Physics: Conference Series 1322 (1), 012023, 2019 | 7 | 2019 |
