| High-performance microwave gate-recessed AlGaN/AlN/GaN MOS-HEMT with 73% power-added efficiency Y Hao, L Yang, X Ma, J Ma, M Cao, C Pan, C Wang, J Zhang IEEE Electron Device Letters 32 (5), 626-628, 2011 | 167 | 2011 |
| High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology Y Lu, X Ma, L Yang, B Hou, M Mi, M Zhang, J Zheng, H Zhang, Y Hao IEEE Electron Device Letters 39 (6), 811-814, 2018 | 51 | 2018 |
| Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance J Zhu, L Chen, J Jiang, X Lu, L Yang, B Hou, M Liao, Y Zhou, X Ma, Y Hao IEEE Electron Device Letters 39 (1), 79-82, 2017 | 40 | 2017 |
| AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity H Lu, B Hou, L Yang, X Niu, Z Si, M Zhang, M Wu, M Mi, Q Zhu, K Cheng, ... IEEE Transactions on Electron Devices 68 (7), 3308-3313, 2021 | 39 | 2021 |
| Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region M Mi, XH Ma, L Yang, Y Lu, B Hou, J Zhu, M Zhang, HS Zhang, Q Zhu, ... IEEE Transactions on Electron Devices 64 (12), 4875-4881, 2017 | 39 | 2017 |
| Influence of fin configuration on the characteristics of AlGaN/GaN fin-HEMTs M Zhang, XH Ma, L Yang, M Mi, B Hou, Y He, S Wu, Y Lu, HS Zhang, ... IEEE Transactions on Electron Devices 65 (5), 1745-1752, 2018 | 34 | 2018 |
| Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge L Yang, M Mi, B Hou, H Zhang, J Zhu, Q Zhu, Y Lu, M Zhang, Y He, ... IEEE Electron Device Letters 38 (11), 1563-1566, 2017 | 34 | 2017 |
| Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors Y Ling, H Gui-Zhou, H Yue, M Xiao-Hua, Q Si, Y Li-Yuan, J Shou-Gao Chinese Physics B 19 (4), 047301, 2010 | 34 | 2010 |
| High RF performance GaN-on-Si HEMTs with passivation implanted termination H Lu, B Hou, L Yang, M Zhang, L Deng, M Wu, Z Si, S Huang, X Ma, ... IEEE Electron Device Letters 43 (2), 188-191, 2021 | 33 | 2021 |
| 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application MH Mi, XH Ma, L Yang, BH Bin-Hou, JJ Zhu, YL He, M Zhang, S Wu, ... Applied Physics Letters 111 (17), 2017 | 31 | 2017 |
| Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs P Wang, X Ma, M Mi, M Zhang, J Zhu, Y Zhou, S Wu, J Liu, L Yang, B Hou, ... IEEE Transactions on Electron Devices 68 (4), 1563-1569, 2021 | 30 | 2021 |
| High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si -Doped AlGaN/GaN:C HEMTs L Yang, M Zhang, B Hou, M Mi, M Wu, Q Zhu, J Zhu, Y Lu, L Chen, X Zhou, ... IEEE Transactions on Electron Devices 66 (3), 1202-1207, 2019 | 30 | 2019 |
| Accurate measurement of channel temperature for AlGaN/GaN HEMTs M Wu, XH Ma, L Yang, Q Zhu, M Zhang, LA Yang, Y Hao IEEE Transactions on Electron Devices 65 (11), 4792-4799, 2018 | 30 | 2018 |
| High linearity and high power performance with barrier layer of sandwich structure and Al0. 05GaN back barrier for X-band application B Hou, L Yang, M Mi, M Zhang, C Yi, M Wu, Q Zhu, Y Lu, J Zhu, X Zhou, ... Journal of Physics D: Applied Physics 53 (14), 145102, 2020 | 27 | 2020 |
| A millimeter-wave AlGaN/GaN HEMT fabricated with transitional-recessed-gate technology for high-gain and high-linearity applications S Wu, X Ma, L Yang, M Mi, M Zhang, M Wu, Y Lu, H Zhang, C Yi, Y Hao IEEE Electron Device Letters 40 (6), 846-849, 2019 | 27 | 2019 |
| Fast and thermal neutron radiation effects on GaN PIN diodes L Lv, P Li, X Ma, L Liu, L Yang, X Zhou, J Zhang, Y Cao, Z Bi, T Jiang, ... IEEE Transactions on Nuclear Science 64 (1), 643-647, 2016 | 21 | 2016 |
| 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique B Hou, X Ma, J Zhu, L Yang, W Chen, M Mi, Q Zhu, L Chen, R Zhang, ... IEEE Electron Device Letters 39 (3), 397-400, 2018 | 20 | 2018 |
| Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack J Zhu, Q Zhu, L Chen, B Hou, L Yang, X Zhou, X Ma, Y Hao IEEE Transactions on Electron Devices 64 (3), 840-847, 2017 | 19 | 2017 |
| Characterization of Al2O3/GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths XH Ma, CY Pan, LY Yang, HY Yu, L Yang, S Quan, H Wang, JC Zhang, ... Chinese Physics B 20 (2), 027304, 2011 | 19 | 2011 |
| High-performance enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based source contact ledge and two-step fluorine treatment L Yang, B Hou, M Mi, Q Zhu, M Wu, J Zhu, Y Lu, M Zhang, L Chen, X Zhou, ... IEEE Electron Device Letters 39 (10), 1544-1547, 2018 | 18 | 2018 |
