| Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X= S, Se, Te) A Abdellaoui, M Ghaffour, M Bouslama, S Benalia, A Ouerdane, B Abidri, ... Journal of Alloys and Compounds 487 (1-2), 206-213, 2009 | 59 | 2009 |
| Study of Sb condensation on InP (100) substrates previously cleaned by low energy Ar+ ion beam S Abdellaoui, B Gruzza, C Pariset, M Bouslama, C Jardin, D Robert Surface Science Letters 208 (1-2), L21-L28, 1989 | 26 | 1989 |
| Optoelectronic properties of cubic BxInyGa1− x− yN alloys matched to GaN for designing quantum well lasers: first-principles study within mBJ exchange potential A Assali, M Bouslama, H Abid, S Zerroug, M Ghaffour, F Saidi, ... Materials Science in Semiconductor Processing 36, 192-203, 2015 | 21 | 2015 |
| Study by EELS and EPES of the stability of InPO4/InP system A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui, K Hamaida, ... Applied surface science 254 (22), 7394-7400, 2008 | 14 | 2008 |
| AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment A Abdellaoui, M Ghaffour, A Ouerdane, K Hamaida, Y Monteil, ... Applied surface science 254 (13), 4024-4028, 2008 | 14 | 2008 |
| Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound N Berrouachedi, M Bouslama, A Abdellaoui, M Ghaffour, C Jardin, ... Applied surface science 256 (1), 21-26, 2009 | 12 | 2009 |
| Study by AES and EELS spectroscopies of antimony and phosphorus evaporated on massive indium and on cleaned InP Z Lounis, M Bouslama, N Berrouachedi, C Jardin, L Auvray, A Abdellaoui, ... Vacuum 82 (5), 529-534, 2008 | 12 | 2008 |
| Auger Electron Spectroscopy, Electron Energy Loss Spectroscopy, UV Photoelectron Spectroscopy, and Photoluminescence Characterization of In2O3 Associated … K Boulenouar, M Bouslama, A Mokadem, S Vizzini, Z Lounis, ... The Journal of Physical Chemistry C 121 (15), 8345-8352, 2017 | 10 | 2017 |
| The study of InPO4/InP (1 0 0) by EELS and AES M Bouslama, Z Lounis, M Ghaffour, M Ghamnia, C Jardin Vacuum 65 (2), 185-191, 2002 | 10 | 2002 |
| Surface stoichiometry analysis by AES, EELS spectroscopy and AFM microscopy in UHV atmosphere of SnO2 thin film Z Lounis, M Bouslama, C Zegadi, D Ghaffor, A Baizid, MS Halati, ... Journal of Electron Spectroscopy and Related Phenomena 226, 9-16, 2018 | 9 | 2018 |
| AES, LEED and PYS investigation of Au deposits on InSe/Si (1 1 1) substrate B Abidri, M Ghaffour, A Abdellaoui, M Bouslama, S Hiadsi, Y Monteil Applied surface science 256 (10), 3007-3009, 2010 | 7 | 2010 |
| Optical investigation of InAs quantum dashes grown on InP (0 0 1) vicinal substrate F Besahraoui, M Bouslama, F Saidi, L Bouzaiene, MHH Alouane, ... Superlattices and Microstructures 65, 264-270, 2014 | 6 | 2014 |
| STUDY BY AES AND EELS OF InP, InSb, InPO4 AND InxGa1-xAs SUBMITTED TO ELECTRON IRRADIATION M Ghaffour, A Abdellaoui, M Bouslama, A Ouerdane, Y Al-Douri Surface Review and Letters 19 (01), 1250002, 2012 | 6 | 2012 |
| The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation A Nouri, Z Lounis, A Ouerdane, M Ghaffour, M Bouadi, H Dumont, ... Vacuum 81 (8), 979-984, 2007 | 6 | 2007 |
| The effect of heating on InGaAs/InP (1 0 0) and InPO4/InP (1 0 0) M Ghaffour, M Bouslama, Z Lounis, A Nouri, C Jardin, Y Monteil, ... Journal of electron spectroscopy and related phenomena 134 (1), 81-85, 2004 | 6 | 2004 |
| Investigation of the properties of Sb doping on tin oxide SNO2 materials for technological applications Z Hachoun, A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui, ... IOP Conference Series: Materials Science and Engineering 123 (1), 012029, 2016 | 5 | 2016 |
| THE INVESTIGATION OF THE ELECTRON BEHAVIOR OF SnO2 BY THE SIMULATION METHODS GGA AND mBJ ASSOCIATED WITH THE EELS … ZC Chikr, A Mokadem, M Bouslama, F Besahraoui, M Ghaffour, ... Surface Review and Letters 20 (05), 1350050, 2013 | 5 | 2013 |
| GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION K Hamaida, M Bouslama, M Ghaffour, F Besahraoui, Z Chelahi-Chikr, ... Surface Review and Letters 19 (06), 1250066, 2012 | 5 | 2012 |
| AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui, A Nouri, K Hamaida, ... IOP Conference Series: Materials Science and Engineering 28 (1), 012024, 2012 | 4 | 2012 |
| Investigation by AES, EELS and TRIM Simulation Method of InP (100) Subjected to He and H Ions Bombardment M Ghaffour, A Abdelkader, A Ouerdane, MH Bouslama, C Jardin Materials Sciences and Applications 2 (5), 421-426, 2011 | 3 | 2011 |
