| Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ... IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017 | 47 | 2017 |
| A low-power and high-speed True Random Number Generator using generated RTN J Brown, R Gao, Z Ji, J Chen, J Wu, J Zhang, B Zhou, Q Shi, J Crowford, ... 2018 IEEE symposium on VLSI technology, 95-96, 2018 | 45 | 2018 |
| Improvement of transparent silver thin film anodes for organic solar cells with a decreased percolation threshold of silver Z Wang, C Zhang, R Gao, D Chen, S Tang, J Zhang, D Wang, X Lu, Y Hao Solar Energy Materials and Solar Cells 127, 193-200, 2014 | 38 | 2014 |
| An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel Z Ji, X Zhang, J Franco, R Gao, M Duan, JF Zhang, WD Zhang, B Kaczer, ... IEEE Transactions on Electron Devices 62 (11), 3633-3639, 2015 | 31 | 2015 |
| Predictive As-grown-Generation (AG) model for BTI-induced device/circuit level variations in nanoscale technology nodes R Gao, Z Ji, SM Hatta, JF Zhang, J Franco, B Kaczer, W Zhang, M Duan, ... 2016 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2016 | 30 | 2016 |
| As-grown-generation model for positive bias temperature instability R Gao, Z Ji, JF Zhang, J Marsland, WD Zhang IEEE Transactions on Electron Devices 65 (9), 3662-3668, 2018 | 29 | 2018 |
| NBTI-generated defects in nanoscaled devices: Fast characterization methodology and modeling R Gao, Z Ji, AB Manut, JF Zhang, J Franco, SWM Hatta, WD Zhang, ... IEEE Transactions on Electron Devices 64 (10), 4011-4017, 2017 | 29 | 2017 |
| RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM … Z Chai, J Ma, W Zhang, B Govoreanu, E Simoen, JF Zhang, Z Ji, R Gao, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 28 | 2016 |
| Time-dependent threshold voltage instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under high reverse bias conditions S Li, Z He, R Gao, Y Chen, Y Chen, C Liu, Y Huang, G Li IEEE Transactions on Electron Devices 68 (1), 443-446, 2020 | 23 | 2020 |
| Understanding charge traps for optimizing Si-passivated Ge nMOSFETs P Ren, R Gao, Z Ji, H Arimura, JF Zhang, R Wang, M Duan, W Zhang, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 23 | 2016 |
| A test-proven As-grown-Generation (AG) model for predicting NBTI under use-bias Z Ji, JF Zhang, L Lin, M Duan, W Zhang, X Zhang, R Gao, B Kaczer, ... 2015 Symposium on VLSI Technology (VLSI Technology), T36-T37, 2015 | 20 | 2015 |
| Trap analysis based on low-frequency noise for SiC power MOSFETs under repetitive short-circuit stress JL Wang, YQ Chen, JT Feng, XB Xu, YF En, B Hou, R Gao, Y Chen, ... IEEE Journal of the Electron Devices Society 8, 145-151, 2020 | 15 | 2020 |
| Trigger-When-Charged: A Technique for Directly Measuring RTN and BTI-Induced Threshold Voltage Fluctuation Under Use- A Manut, R Gao, JF Zhang, Z Ji, M Mehedi, WD Zhang, D Vigar, A Asenov, ... IEEE Transactions on Electron Devices 66 (3), 1482-1488, 2019 | 14 | 2019 |
| Bias temperature instability of mosfets: Physical processes, models, and prediction JF Zhang, R Gao, M Duan, Z Ji, W Zhang, J Marsland Electronics 11 (9), 1420, 2022 | 13 | 2022 |
| Investigation of negative bias temperature instability effect in partially depleted SOI pMOSFET C Peng, Z Lei, R Gao, Z Zhang, Y Chen, Y En, Y Huang IEEE Access 8, 99037-99046, 2020 | 13 | 2020 |
| Towards understanding the interaction between hydrogen poisoning and bias stress in AlGaN/GaN MIS-HEMTs with SiNx gate dielectric R Gao, C Liu, Z He, Y Chen, Y Shi, X Lin, X Zhang, Z Wang, Y En, G Lu, ... IEEE Electron Device Letters 42 (2), 212-215, 2021 | 12 | 2021 |
| Degradation behavior and trap analysis based on low-frequency noise of AlGaN/GaN HEMTs subjected to radio frequency overdrive stress Q Chen, YQ Chen, C Liu, K Geng, Y He, R Gao, Y Huang, X Yang IEEE Transactions on Electron Devices 68 (1), 66-71, 2020 | 12 | 2020 |
| Effect of Moisture Stress on the Resistance of HfO2/TaOx-Based 8-Layer 3D Vertical Resistive Random Access Memory R Gao, D Lei, Z He, Y Chen, Y Huang, Y En, X Xu, F Zhang IEEE Electron Device Letters 41 (1), 38-41, 2019 | 12 | 2019 |
| An ion beam layer removal method of determining the residual stress in the as-fabricated TSV-Cu/TiW/SiO2/Si interface on a nanoscale S Chen, YF En, GY Li, ZZ Wang, R Gao, R Ma, LX Zhang, Y Huang Microelectronics Reliability 112, 113826, 2020 | 11 | 2020 |
| Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions S Li, Z He, R Gao, Y Chen, Y Liu, Z Zhu Journal of Physics D: Applied Physics 52 (48), 485106, 2019 | 11 | 2019 |
zhigang jiShanghai Jiaotong University在 sjtu.edu.cn 的电子邮件经过验证
