| Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ... Advanced Functional Materials 32 (27), 2201737, 2022 | 32 | 2022 |
| Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ... IEEE Transactions on Electron Devices 69 (2), 808-815, 2021 | 23 | 2021 |
| Ferroelectric fets with separated capacitor in the back-end-of-line: Role of the capacitance ratio D Lehninger, R Hoffmann, A Sünbül, H Mähne, T Kämpfe, K Bernert, ... IEEE Electron Device Letters 43 (11), 1866-1869, 2022 | 18 | 2022 |
| Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability D Lehninger, A Prabhu, A Sünbül, T Ali, F Schöne, T Kämpfe, ... Advanced Physics Research 2 (9), 2200108, 2023 | 16 | 2023 |
| Study of nanosecond laser annealing on silicon doped hafnium oxide film crystallization and capacitor reliability T Ali, R Olivo, S Kerdiles, D Lehninger, M Lederer, D Sourav, AS Royet, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 16 | 2022 |
| Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films A Sünbül, D Lehninger, R Hoffmann, R Olivo, A Prabhu, F Schöne, ... Advanced Engineering Materials 25 (4), 2201124, 2023 | 9 | 2023 |
| Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? K Seidel, D Lehninger, F Müller, Y Raffel, A Sünbül, R Revello, RHS De, ... 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 8 | 2023 |
| A study on imprint behavior of ferroelectric hafnium oxide caused by high‐temperature annealing A Sünbül, D Lehninger, M Lederer, H Mähne, R Hoffmann, K Bernert, ... physica status solidi (a), 2023 | 7 | 2023 |
| Impact of the ferroelectric and interface layer optimization in an MFIS HZO based ferroelectric tunnel junction for neuromorphic based synaptic storage T Ali, A Sünbül, K Mertens, R Revello, M Lederer, D Lehninger, F Müller, ... 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | 7 | 2021 |
| Roadmap of ferroelectric memories: From discovery to 3D integration S De, M Lederer, Y Raffel, F Müller, D Lehninger, A Sunbul, T Ali, ... Authorea Preprints, 2023 | 3 | 2023 |
| Endurance study of silicon-doped hafnium oxide (HSO) and zirconium-doped hafnium oxide (HZO)-based FeFET memory P Duhan, T Ali, P Khedgarkar, K Kühnel, M Czernohorsky, M Rudolph, ... IEEE Transactions on Electron Devices, 2023 | 3 | 2023 |
| Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress D Lehninger, A Sünbül, R Olivo, T Kämpfe, K Seidel, M Lederer 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 3 | 2023 |
| Impact of temperature on reliability of mfis hzo-based ferroelectric tunnel junctions A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P11-1-P11-5, 2022 | 3 | 2022 |
| Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films D Lehninger, A Sünbül, K Seidel, M Lederer physica status solidi (a), 2300712, 2024 | 1 | 2024 |
| A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes K Seidel, D Lehninger, S Abdulazhanov, A Sünbül, R Hoffmann, ... 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE …, 2023 | 1 | 2023 |
| Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture A Sünbül, D Lehninger, A Pourjafar, S Yang, F Müller, R Olivo, T Kämpfe, ... Memories-Materials, Devices, Circuits and Systems 8, 100110, 2024 | | 2024 |
| Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions M Lederer, F Müller, R Hoffmann, R Olivo, Y Raffel, S Yang, S De, ... 2024 IEEE International Memory Workshop (IMW), 1-4, 2024 | | 2024 |
| Integration of ferroelectric devices for advanced in-memory computing concepts K Seidel, D Lehninger, A Sünbül, R Hoffmann, R Revello, N Yadav, ... Japanese Journal of Applied Physics 63 (5), 050802, 2024 | | 2024 |
| Structural element with improved ferroelectric polarisation switching and reliability and method for producing said structral element D Lehninger, A Sünbül, M Lederer, K Seidel US Patent App. 18/492,819, 2024 | | 2024 |
| Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors A Sünbül, D Lehninger, R Hoffmann, H Mähne, K Bernert, S Thiem, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024 | | 2024 |
