Lanthanum-substituted bismuth titanate for use in non-volatile memories BH Park, BS Kang, SD Bu, TW Noh, J Lee, W Jo Nature 401 (6754), 682-684, 1999 | 2692 | 1999 |
Novel J eff= 1/2 Mott state induced by relativistic spin-orbit coupling in Sr 2 IrO 4 BJ Kim, H Jin, SJ Moon, JY Kim, BG Park, CS Leem, J Yu, TW Noh, C Kim, ... Physical review letters 101 (7), 076402, 2008 | 1826 | 2008 |
Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State <?format ?>in Transition Metal Oxides (, 2, and ) SJ Moon, H Jin, KW Kim, WS Choi, YS Lee, J Yu, G Cao, A Sumi, ... Physical review letters 101 (22), 226402, 2008 | 569 | 2008 |
Ferromagnetism Induced by Clustered Co in Co-Doped Anatase T i O 2 Thin Films JY Kim, JH Park, BG Park, HJ Noh, SJ Oh, JS Yang, DH Kim, SD Bu, ... Physical review letters 90 (1), 017401, 2003 | 548 | 2003 |
Giant flexoelectric effect in ferroelectric epitaxial thin films D Lee, A Yoon, SY Jang, JG Yoon, JS Chung, M Kim, JF Scott, TW Noh Physical Review Letters 107 (5), 057602, 2011 | 527 | 2011 |
Resistive switching phenomena: A review of statistical physics approaches JS Lee, S Lee, TW Noh Applied Physics Reviews 2 (3), 2015 | 486 | 2015 |
Polarization Relaxation Induced by a Depolarization Field <?format ?>in Ultrathin Ferroelectric Capacitors DJ Kim, JY Jo, YS Kim, YJ Chang, JS Lee, JG Yoon, TK Song, TW Noh Physical review letters 95 (23), 237602, 2005 | 412 | 2005 |
Random circuit breaker network model for unipolar resistance switching SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ... Advanced Materials 20 (6), 1154-1159, 2008 | 406 | 2008 |
Experimental study of the three-dimensional ac conductivity and dielectric constant of a conductor-insulator composite near the percolation threshold Y Song, TW Noh, SI Lee, JR Gaines Physical Review B 33 (2), 904, 1986 | 392 | 1986 |
Frequency Shifts of the Internal Phonon Modes in Mn KH Kim, JY Gu, HS Choi, GW Park, TW Noh Physical Review Letters 77 (9), 1877, 1996 | 383 | 1996 |
Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface YW Yin, JD Burton, YM Kim, AY Borisevich, SJ Pennycook, SM Yang, ... Nature materials 12 (5), 397-402, 2013 | 350 | 2013 |
Mid-infrared properties of a VO 2 film near the metal-insulator transition HS Choi, JS Ahn, JH Jung, TW Noh, DH Kim Physical Review B 54 (7), 4621, 1996 | 344 | 1996 |
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects D Lee, SH Baek, TH Kim, JG Yoon, CM Folkman, CB Eom, TW Noh Physical Review B—Condensed Matter and Materials Physics 84 (12), 125305, 2011 | 343 | 2011 |
Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures L Wang, Q Feng, Y Kim, R Kim, KH Lee, SD Pollard, YJ Shin, H Zhou, ... Nature materials 17 (12), 1087-1094, 2018 | 326 | 2018 |
Domain switching kinetics in disordered ferroelectric thin films JY Jo, HS Han, JG Yoon, TK Song, SH Kim, TW Noh Physical review letters 99 (26), 267602, 2007 | 321 | 2007 |
Occurrence of both unipolar memory and threshold resistance switching in a NiO film SH Chang, JS Lee, SC Chae, SB Lee, C Liu, B Kahng, DW Kim, TW Noh Physical review letters 102 (2), 026801, 2009 | 314 | 2009 |
Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals Crystals CT Kuo, M Neumann, K Balamurugan, HJ Park, S Kang, HW Shiu, ... Scientific reports 6 (1), 20904, 2016 | 287 | 2016 |
Critical thickness of ultrathin ferroelectric BaTiO3 films YS Kim, DH Kim, JD Kim, YJ Chang, TW Noh, JH Kong, K Char, YD Park, ... Applied Physics Letters 86 (10), 2005 | 285 | 2005 |
Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12 BH Park, SJ Hyun, SD Bu, TW Noh, J Lee, HD Kim, TH Kim, W Jo Applied Physics Letters 74 (13), 1907-1909, 1999 | 270 | 1999 |
Formation of Co nanoclusters in epitaxial thin films and their ferromagnetism DH Kim, JS Yang, KW Lee, SD Bu, TW Noh, SJ Oh, YW Kim, JS Chung, ... Applied Physics Letters 81 (13), 2421-2423, 2002 | 268 | 2002 |