| Integration of III-V lasers on Si for Si photonics M Tang, JS Park, Z Wang, S Chen, P Jurczak, A Seeds, H Liu Progress in Quantum Electronics 66, 1-18, 2019 | 128 | 2019 |
| Heteroepitaxial growth of III-V semiconductors on silicon JS Park, M Tang, S Chen, H Liu Crystals 10 (12), 1163, 2020 | 98 | 2020 |
| Group III-nitride-based ultraviolet light-emitting diodes: ways of increasing external quantum efficiency JS Park, JK Kim, J Cho, TY Seong ECS Journal of Solid State Science and Technology 6 (4), Q42, 2017 | 92 | 2017 |
| Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001) T Zhou, M Tang, G Xiang, B Xiang, S Hark, M Martin, T Baron, S Pan, ... Nature communications 11 (1), 977, 2020 | 89 | 2020 |
| Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon Z Liu, C Hantschmann, M Tang, Y Lu, JS Park, M Liao, S Pan, A Sanchez, ... Journal of Lightwave Technology 38 (2), 240-248, 2019 | 69 | 2019 |
| III–V quantum-dot lasers monolithically grown on silicon M Liao, S Chen, JS Park, A Seeds, H Liu Semiconductor Science and Technology 33 (12), 123002, 2018 | 42 | 2018 |
| Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001) K Li, J Yang, Y Lu, M Tang, P Jurczak, Z Liu, X Yu, JS Park, H Deng, H Jia, ... Advanced Optical Materials 8 (22), 2000970, 2020 | 29 | 2020 |
| Recent progress of quantum dot lasers monolithically integrated on Si platform V Cao, JS Park, M Tang, T Zhou, A Seeds, S Chen, H Liu Frontiers in Physics 10, 839953, 2022 | 26 | 2022 |
| Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes JS Park, JH Kim, JY Na, DH Kim, D Kang, SK Kim, TY Seong Journal of Alloys and Compounds 703, 198-203, 2017 | 15 | 2017 |
| Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN DH Kim, WC Lim, JS Park, TY Seong Journal of alloys and compounds 588, 327-331, 2014 | 15 | 2014 |
| Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors CH Choi, J Han, JS Park, TY Seong Optics Express 21 (22), 26774-26779, 2013 | 15 | 2013 |
| Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode JS Park, JH Kim, JY Kim, DH Kim, D Kang, JS Sung, TY Seong Current Applied Physics 16 (5), 545-548, 2016 | 14 | 2016 |
| Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode JY Kim, JS Park, JY Na, SK Kim, D Kang, TY Seong Microelectronic Engineering 169, 29-33, 2017 | 13 | 2017 |
| Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes JS Park, YH Sung, JY Na, D Kang, SK Kim, H Lee, TY Seong Optics Express 25 (15), 17556-17561, 2017 | 12 | 2017 |
| Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates J Yang, K Li, H Jia, H Deng, X Yu, P Jurczak, JS Park, S Pan, W Li, ... Nanoscale 14 (46), 17247-17253, 2022 | 11 | 2022 |
| Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes JS Park, JH Kim, JY Kim, DH Kim, JY Na, SK Kim, D Kang, TY Seong Nanotechnology 28 (4), 045205, 2016 | 11 | 2016 |
| Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN JS Park, J Han, TY Seong Journal of Alloys and Compounds 652, 167-171, 2015 | 10 | 2015 |
| Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer JS Park, J Han, TY Seong Superlattices and Microstructures 83, 361-366, 2015 | 10 | 2015 |
| Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes JS Park, J Han, JS Ha, TY Seong Applied Physics Letters 104 (17), 2014 | 10 | 2014 |
| Improved thermal stability of Ag ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer JS Park, JW Jeon, S Jin, TY Seong Electrochemical and Solid-State Letters 15 (4), H130, 2012 | 9 | 2012 |
