| Enhanced electrical and mechanical performance of InSnZnO TFTs with multifunctional laminated organic passivation layer D Lin, X Li, W Zhong, C Zhou, L Lan, R Chen IEEE Transactions on Electron Devices 69 (11), 6146-6153, 2022 | 6 | 2022 |
| In-situ fluorine-doped ZnSnO thin film and thin-film transistor X Yin, D Lin, W Zhong, Y Chen, G Li, Y Li, R Chen Solid-State Electronics 208, 108726, 2023 | 4 | 2023 |
| Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection D Lin, C Zhou, D Luo, B Liu, R Chen IEEE Electron Device Letters 44 (7), 1120-1123, 2023 | 4 | 2023 |
| Effect of source–drain contact and channel length on the performance of vertical thin-film transistors XM Yin, DL Lin, YP Yan, Y Li, WM Ma AIP Advances 13 (10), 2023 | 3 | 2023 |
| Highly Stable Flexible Thin-Film Transistors in Harsh Environments by Superhydrophobic Passivations Y Chen, W Zhong, R Chen, D Lin, L Lan, J Zhang, Y Liu IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Ultra-sensitive ZnO-nanorod-structured pressure sensor by integrating InSnZnO thin film transistor K Lai, M Chen, D Lin, Y Liu, R Chen, R Yao IEEE Sensors Journal, 2024 | | 2024 |
| High Performance DUV Synaptic Oxide Thin Film Transistor with Rapid Response D Lin, D Luo, FSY Yeung, HS Kwok, R Chen IEEE Electron Device Letters, 2024 | | 2024 |
| P‐1.4: Synergistic Enhancement of Stability and Mobility in ZrO2‐Doped ITZO TFTs with MLO Passivation D Lin, R Chen SID Symposium Digest of Technical Papers 55, 634-636, 2024 | | 2024 |
| Flexible InSnZnO Phototransistors for Deep Ultraviolet Applications D LIN, J WANG, R CHEN, Z SUN, FSY YEUNG, HS KWOK Proceedings of the International Display Workshops (Web) 30, 1-1, 2023 | | 2023 |
| P‐4.4: Multifunctional Laminated Organic Passivation Layer on InSnZnO Thin‐Film Transistors for Enhanced Reliability D Lin, W Zhong, R Chen SID Symposium Digest of Technical Papers 53 (S1), 761-764, 2022 | | 2022 |
| Multifunctional Laminated Organic Passivation Layer on InSnZnO Thin-Film Transistors for enhanced performance D Lin, W Zhong, R Chen | | |
