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Jordan M. Smith
Jordan M. Smith
Graduate Student Researcher, University of California Santa Barbara (UCSB)
在 ucsb.edu 的电子邮件经过验证 - 首页
标题
引用次数
年份
Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter
JM Smith, R Ley, MS Wong, YH Baek, JH Kang, CH Kim, MJ Gordon, ...
Applied Physics Letters 116 (7), 071102, 2020
1962020
Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer
V Rienzi, J Smith, N Lim, HM Chang, P Chan, MS Wong, MJ Gordon, ...
Crystals 12 (8), 1144, 2022
112022
FDTD Modeling of Light Extraction in Realistic Flip-Chip InGaN microLEDs
JM Smith, SP DenBaars
Poster Presentation: 13th International Conference on Nitride Semiconductors …, 2019
2019
Formation of microled mesa structures with atomic layer deposition passivated sidewalls, a self-aligned dielectric via to the top electrical contact, and a plasma-damage-free …
JM Smith, SP DenBaars
WO Patent WO/2021/086,935, 2021
22021
III-nitride-based RGB microLEDs for AR/VR applications
S Denbaars, M Wong, P Li, H Li, J Smith, R White, J Ewing, ...
Light-Emitting Devices, Materials, and Applications XXVI, PC1202201, 2022
12022
Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments
MS Wong, JA Kearns, C Lee, JM Smith, C Lynsky, G Lheureux, H Choi, ...
Optics Express 28 (4), 5787-5793, 2020
1362020
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon
J Ewing, C Lynsky, J Zhang, P Shapturenka, M Wong, J Smith, M Iza, ...
Crystals 12 (9), 1216, 2022
122022
Metasurface-Based InGaN/GaN Light-Emitting Diodes with Unidirectional Emission
Y Mohtashami, LK Heki, MS Wong, JM Smith, JJ Ewing, WJ Mitchell, ...
CLEO: Fundamental Science, FF2D. 7, 2023
2023
Method to improve the performance of gallium-containing light-emitting devices
MS Wong, JM Smith, SP Denbaars
WO Patent WO/2021/087,274, 2021
2021
Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation
RT Ley, JM Smith, MS Wong, T Margalith, S Nakamura, SP DenBaars, ...
Applied Physics Letters 116 (25), 251104, 2020
1382020
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