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Mohsen Nami
Mohsen Nami
Apple Inc
在 yale.edu 的电子邮件经过验证
标题
引用次数
年份
A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)
B Li, S Wang, M Nami, J Han
Journal of Crystal Growth 534, 125492, 2020
132020
Analysis and applications of an optically-injected 1310 nm Quantum-Dot Distributed Feedback laser
A Hurtado, J Mee, M Nami, ID Henning, MJ Adams, LF Lester
2013 15th International Conference on Transparent Optical Networks (ICTON), 1-4, 2013
2013
Analysis of light extraction efficiency for gallium nitride‐based coaxial microwall light‐emitting diodes
M Nami, A Rishinaramangalam, D Feezell
physica status solidi (c) 11 (3‐4), 766-770, 2014
72014
Bistability and switching with very high contrast ratio in an optically-injected 1550nm-QDash Fabry-Perot laser
A Hurtado, M Nami, ID Henning, MJ Adams, LF Lester
ISLC 2012 International Semiconductor Laser Conference, 112-113, 2012
2012
Bistability patterns and nonlinear switching with very high contrast ratio in a 1550 nm quantum dash semiconductor laser
A Hurtado, M Nami, ID Henning, MJ Adams, LF Lester
Applied Physics Letters 101 (16), 2012
212012
Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes
M Nami, IE Stricklin, KM DaVico, S Mishkat-Ul-Masabih, ...
Scientific Reports 8 (1), 501, 2018
862018
Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence
X Li, E DeJong, N Pant, M Monavarian, A Rashidi, M Nami, M Kioupaksi, ...
Proceedings of SPIE-The International Society for Optical Engineering, 2023
2023
Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence
D Feezell, A Rashidi, M Nami, N Pant, M Monavarian, ...
Lumileds LLC, 2022
2022
CMOS-compatible silicon nanowire field-effect transistors: Where nanotechnology pushes the limits in biosensing
M Nami, M Reed
Semiconducting Silicon Nanowires for Biomedical Applications, 327-362, 2022
12022
Designing Sensitivity: A Comparative Analysis of Microelectrode Topologies for Electrochemical Oxygen Sensing in Biomedical Applications
DT Bacheschi, EZ Strittmatter, S Sawtelle, M Nami
Micromachines 13 (1), 141, 2022
32022
Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 2017
612017
Editorial for'focus collection in memory of Prof Mark A Reed'
L Calvet, W Guan, J Klemic, T Lee, M Nami, J Sleight, E Stern, S Yosinski, ...
Nanotechnology 35 (11), 110201, 2023
2023
Effect of active region design on carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.
I Brener, M Nami, R Eller, S Okur, S Liu, D Feezel, S DenBaars, S Oh
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2016
2016
Effect of Growth Temperature and Mask Geometry on Morphology and Photoluminescence of GaN/InGaN Core-Shell Nanowires.
M Nami, R Eller, S Okur, S Liu, D Feezel, I Brener
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2016
2016
Electrical and Label-Free Detection of T-Cell Activation Against COVID-19: A Method Towards Point-of-Care Monitoring of Immune System
M Nami, P Han, D Hanlon, S Yosinski, R Edelson, M Reed
Electrochemical Society Meeting Abstracts 239, 2031-2031, 2021
12021
Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity
M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ...
ACS Photonics 6 (7), 1618-1625, 2019
562019
Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching
B Li, S Wang, M Nami, AM Armstrong, J Han
ACS Applied Materials & Interfaces 13 (44), 53220-53226, 2021
52021
Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients
M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ...
Optics express 25 (16), 19343-19353, 2017
392017
GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)
M Behzadirad, N Dawson, M Nami, AK Rishinaramangalam, DF Feezell, ...
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII 9927, 112-112, 2016
2016
GaN nanowire tips for nanoscale atomic force microscopy
M Behzadirad, M Nami, AK Rishinaramagalam, DF Feezell, T Busani
Nanotechnology 28 (20), 20LT01, 2017
252017
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