| A photoelectric spiking neuron for visual depth perception C Chen, Y He, H Mao, L Zhu, X Wang, Y Zhu, Y Zhu, Y Shi, C Wan, Q Wan Advanced Materials 34 (20), 2201895, 2022 | 62 | 2022 |
| A spiking stochastic neuron based on stacked InGaZnO memristors H Mao, Y He, C Chen, L Zhu, Y Zhu, Y Zhu, S Ke, X Wang, C Wan, Q Wan Advanced Electronic Materials 8 (2), 2100918, 2022 | 18 | 2022 |
| A Spiking Visual Neuron for Depth Perceptual Systems C Chen, Y He, H Mao, L Zhu, X Wang, Y Zhu, Y Zhu, Y Shi, C Wan, Q Wan | 1 | 2021 |
| Amorphous indium–gallium–zinc–oxide memristor arrays for parallel true random number generators H Mao, Y Zhu, Y Zhu, B Peng, C Chen, L Zhu, S Ke, X Wang, C Wan, ... Applied Physics Letters 122 (5), 2023 | 7 | 2023 |
| Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics L Zhu, G He, ZQ Sun, M Liu, SS Jiang, S Liang, WD Li Journal of Sol-Gel Science and Technology 83, 675-682, 2017 | 14 | 2017 |
| BCM learning rules emulated by a-IGZO-based photoelectronic neuromorphic transistors S Ke, C Fu, X Lin, Y Zhu, H Mao, L Zhu, X Wang, C Chen, C Wan, Q Wan IEEE Transactions on Electron Devices 69 (8), 4646-4650, 2022 | 15 | 2022 |
| Contact engineering for organic CMOS circuits Q Chen, J Cao, Y Liu, R Zhu, J Cao, Z Liu, X Zhao, J Wu, G Yang, L Zhu, ... Journal of Physics: Materials 7 (1), 012002, 2023 | | 2023 |
| Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices H Zhao, J Ma, S Li, Y Yang, Z Wang, Z Luo, X Guo, B Luo, L Zhu, L Wang, ... Applied Physics Letters 124 (17), 2024 | | 2024 |
| Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters L Zhu, G He, Y Long, B Yang, J Lv IEEE Transactions on Electron Devices 65 (7), 2870-2876, 2018 | 41 | 2018 |
| Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics B He, G He, L Zhu, J Cui, E Fortunato, R Martins Advanced Functional Materials 34 (6), 2310264, 2024 | 5 | 2024 |
| Emerging memristive devices for brain-inspired computing and artificial perception J Wang, Y Zhu, L Zhu, C Chen, Q Wan Frontiers in Nanotechnology 4, 940825, 2022 | 8 | 2022 |
| Exploring the influence of the contact resistance on perovskite phototransistors L Chen, Q Chen, H Zhu, R Wang, Y Wu, R Li, L Zhu, G Yang, X Wan, ... Applied Physics Letters 124 (16), 2024 | | 2024 |
| Flexible dual-gate MoS₂ neuromorphic transistors on freestanding proton-conducting chitosan membranes C Chen, Y He, L Zhu, Y Zhu, Y Shi, Q Wan IEEE Transactions on Electron Devices 68 (6), 3119-3123, 2021 | 9 | 2021 |
| Flexible oxide-based Schottky neuromorphic TFTs with configurable spiking dynamic functions Y He, Y Zhu, C Chen, R Liu, S Jiang, L Zhu, Y Shi, Q Wan IEEE Transactions on Electron Devices 67 (11), 5216-5220, 2020 | 14 | 2020 |
| Freestanding dual-gate oxide-based neuromorphic transistors for flexible artificial nociceptors S Jiang, Y He, R Liu, C Chen, L Zhu, Y Zhu, Y Shi, Q Wan IEEE Transactions on Electron Devices 68 (1), 415-420, 2020 | 16 | 2020 |
| Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes X Wang, L Zhu, C Chen, H Mao, Y Zhu, Y Zhu, Y Yang, C Wan, Q Wan Flexible and Printed Electronics 6 (4), 044008, 2021 | 4 | 2021 |
| Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics L Zhu, G He, J Lv, E Fortunato, R Martins RSC advances 8 (30), 16788-16799, 2018 | 55 | 2018 |
| HfZrOx-based capacitive synapses with highly linear and symmetric multilevel characteristics for neuromorphic computing Y Zhu, Y He, C Chen, L Zhu, H Mao, Y Zhu, X Wang, Y Yang, C Wan, ... Applied Physics Letters 120 (11), 2022 | 15 | 2022 |
| High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing L Zhu, Y He, C Chen, X Wang, Y Zhu, Y Zhu, H Mao, C Wan, Q Wan IEEE Transactions on Electron Devices 68 (12), 6154-6158, 2021 | 23 | 2021 |
| High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al2O3/HfO2 Dielectrics Y Li, L Zhu, C Chen, Y Zhu, C Wan, Q Wan Chinese Physics Letters 39 (11), 118501, 2022 | 1 | 2022 |
