Influence of microstructure and hydrogen concentration on amorphous silicon crystallization N Budini, PA Rinaldi, JA Schmidt, RD Arce, RH Buitrago Thin Solid Films 518 (18), 5349-5354, 2010 | 56 | 2010 |
Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells D Kieven, A Grimm, A Beleanu, CGF Blum, J Schmidt, T Rissom, ... Thin Solid Films 519 (6), 1866-1871, 2011 | 39 | 2011 |
Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime RR Koropecki, JA Schmidt, R Arce Journal of applied physics 91 (11), 8965-8969, 2002 | 39 | 2002 |
Modulation De La photoconductivite dans le silicium a basse temperature par resonance magnetique electronique des impuretes peu profondes J Schmidt, I Solomon COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B …, 1966 | 38 | 1966 |
Limitations of the constant photocurrent method: A comprehensive experimental and modeling study JA Schmidt, FA Rubinelli Journal of applied physics 83 (1), 339-348, 1998 | 35 | 1998 |
Determination of semiconductor band gap state parameters from photoconductivity measurements. II. Experimental results C Longeaud, JA Schmidt, RR Koropecki Physical Review B—Condensed Matter and Materials Physics 73 (23), 235317, 2006 | 34 | 2006 |
Effect of thickness on structural and electrical properties of Al-doped ZnO films FA Garcés, N Budini, RD Arce, JA Schmidt Thin solid films 574, 162-168, 2015 | 31 | 2015 |
Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Photo-oxidation effects in porous silicon luminescence RR Koropecki, RD Arce, JA Schmidt Physical Review-Section B-Condensed Matter 69 (20), 205317-205317, 2004 | 31 | 2004 |
Determination of diffusion lengths in organic semiconductors: Correlation with solar cell performances C Longeaud, AF Allah, J Schmidt, M El Yaakoubi, S Berson, N Lemaitre Organic Electronics 31, 253-257, 2016 | 26 | 2016 |
Photoinduced phenomena in nanostructured porous silicon RD Arce, RR Koropecki, G Olmos, AM Gennaro, JA Schmidt Thin Solid Films 510 (1-2), 169-174, 2006 | 26 | 2006 |
Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors JA Schmidt, C Longeaud Physical Review B—Condensed Matter and Materials Physics 71 (12), 125208, 2005 | 26 | 2005 |
Polycrystalline silicon thin film solar cells prepared by PECVD-SPC RH Buitrago, GA Risso, M Cutrera, M Battioni, L De Bernardez, ... International Journal of Hydrogen Energy 33 (13), 3522-3525, 2008 | 25 | 2008 |
External quantum efficiency measurements used to study the stability of differently deposited perovskite solar cells P Hierrezuelo-Cardet, AF Palechor-Ocampo, J Caram, F Ventosinos, ... Journal of Applied Physics 127 (23), 2020 | 24 | 2020 |
Light-induced defects in hydrogenated amorphous silicon studied by the constant-photocurrent method JA Schmidt, R Arce, RH Buitrago, RR Koropecki Physical Review B 55 (15), 9621, 1997 | 24 | 1997 |
Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques C Longeaud, F Ventosinos, JA Schmidt Journal of Applied Physics 112 (2), 2012 | 23 | 2012 |
Infrared studies combined with hydrogen effusion experiments on nanostructured porous silicon RR Koropecki, RD Arce, JA Schmidt Journal of non-crystalline solids 338, 159-162, 2004 | 22 | 2004 |
Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements JA Schmidt, RD Arce, RR Koropecki, RH Buitrago Physical Review B 59 (7), 4568, 1999 | 21 | 1999 |
Photo-oxidation effects in porous silicon luminescence RR Koropecki, RD Arce, JA Schmidt Physical Review B 69 (20), 205317, 2004 | 20 | 2004 |
Thickness dependence of crystalline structure of Al-doped ZnO thin films deposited by spray pyrolysis FA Garcés, N Budini, RD Arce, JA Schmidt Procedia Materials Science 9, 221-229, 2015 | 19 | 2015 |
Determination of semiconductor band gap state parameters from photoconductivity measurements. I. Theoretical developments C Longeaud, JA Schmidt, JP Kleider Physical Review B—Condensed Matter and Materials Physics 73 (23), 235316, 2006 | 19 | 2006 |