| Effect of channel width on the electrical characteristics of amorphous/ nanocrystalline silicon bilayer thin-film transistors G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos IEEE Transactions on Electron Devices 54 (5), 1265-1269, 2007 | 20 | 2007 |
| Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Templier, F ... IEEE Transactions on Electron Devices 54 (5), 1076-1082, 2007 | 19 | 2007 |
| Electrical and noise characterization of bottom-gated nanocrystalline silicon thin-film transistors G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos Journal of Applied Physics 100 (11), 114311, 2006 | 19 | 2006 |
| A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation G Pappas, I., Hatzopoulos, A.T., Tassis, D.H., Arpatzanis N., Sisko S ... Journal of Applied Physics 100 (6), 064506, 2006 | 19 | 2006 |
| Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs] M Papastamatiou, N Arpatzanis, GJ Papaioannou, C Papastergiou, ... IEEE Transactions on Electron Devices 44 (3), 364-372, 1997 | 19 | 1997 |
| Stability of amorphous-silicon and nanocrystalline silicon thin-film transistors under DC and AC stress G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos IEEE Electron Device Letters 28 (9), 803-805, 2007 | 17 | 2007 |
| Analytical current-voltage model for nanocrystalline silicon thin-film transistors M Hatzopoulos, A.T., Pappas, I., Tassis, D.H., Arpatzanis N., Dimitriadis C ... Applied Physics Letters 89 (19), 193504, 2006 | 15 | 2006 |
| Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress G Arpatzanis, N., Hatzopoulos, A.T., Tassis, D.H., (...), Oudwan, M., Kamarinos Microelectronics Reliability 48(4), pp. 531-536 48 (4), 531-536, 2008 | 12* | 2008 |
| Determination of bulk and interface density of states in polycrystalline silicon thin film transistors G Arpatzanis, N., Dimitriadis, C.A., Siskos, S., Hatzopoulos, A.A., Kamarinos Thin Solid Films 515 (19), 7581-7584, 2007 | 10 | 2007 |
| The gamma ray radiation effects in high-electron-mobility transistors N Arpatzanis, M Papastamatiou, GJ Papaioannou, Z Hatzopoulos, ... Semiconductor science and technology 10 (11), 1445, 1995 | 10 | 1995 |
| 1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos Solid-State Electronics 51 (5), 726-731, 2007 | 8 | 2007 |
| Ion irradiation induced defects in epitaxial GaAs layers N Arpatzanis, R Vlastou, G Konstantinidis, W Assmann, M Papastamatiou, ... Solid-State Electronics 42 (2), 277-282, 1998 | 8 | 1998 |
| Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors G Tassis, D.H., Hatzopoulos, A.T., Arpatzanis, N., Dimitriadis, C.A., Kamarinos Microelectronics Reliability 46 (12), 2032-2037, 2006 | 6 | 2006 |
| Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots JI Arpatzanis, N., Tassis, D.H., Dimitriadis, C.A., (...), Choi, W.J., Lee Semiconductor Science and Technology 22 ((10),002), 1086-1091, 2007 | 4 | 2007 |
| Electrical and low frequency noise properties of H-SiC p +-n-n + junction diodes M Arpatzanis, N., Tsormpatzoglou, A., Dimitriadis, C.A., (...), Camara, N ... Physica Status Solidi (A) Applications and Materials Science 203 (10), 2551-2557, 2006 | 4* | 2006 |
| Experimental investigation of noise in 4H-SiC p+-n-n+ junctions N Arpatzanis, N., Tassis, D.H., Dimitriadis, C.A., Zekentes, K., Camara Semiconductor Science and Technology 21 (5), 591-593, 2006 | 4 | 2006 |
| Effects of hot carriers in offset gated polysilicon thin-film transistors G Hatzopoulos, A.T., Tassis, D.H., Arpatzanis, N., Dimitriadis, C.A., Kamarinos Microelectronics Reliability 46 (2-4), 311-316, 2006 | 4 | 2006 |
| Stability of n -channel a-Si:Hnc-Si:H bilayer thin-film transistors under dynamic stress G Hatzopoulos, A.T., Tassis, D.H., Arpatzanis, N., (...), Oudwan, M., Kamarinos Journal of Applied Physics 103(8),084514 103 (8), 084514, 2008 | 3* | 2008 |
| Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures C Arpatzanis, N., Tsormpatzoglou, A., Dimitriadis, C.A., (...), Lee, J.I ... Journal of Applied Physics 102 (5), 054302, 2007 | 3 | 2007 |
| On the α‐Particle Irradiation Effects in MESFETs M Papastamatiou, N Arpatzanis, GJ Papaioannou, G Constantinides, ... physica status solidi (a) 180 (2), 569-584, 2000 | 3 | 2000 |
