| Nanohole etching in AlGaSb with gallium droplets J Hilska, A Chellu, T Hakkarainen Crystal Growth & Design 21 (4), 1917-1923, 2021 | 16 | 2021 |
| Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range A Chellu, J Hilska, JP Penttinen, T Hakkarainen APL Materials 9 (5), 2021 | 15 | 2021 |
| GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices A Chellu, E Koivusalo, M Raappana, S Ranta, V Polojärvi, A Tukiainen, ... Nanotechnology 32 (13), 130001, 2021 | 15 | 2021 |
| Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band J Michl, G Peniakov, A Pfenning, J Hilska, A Chellu, A Bader, M Guina, ... Advanced Quantum Technologies 6 (12), 2300180, 2023 | 6 | 2023 |
| Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window L Leguay, A Chellu, J Hilska, E Luna, A Schliwa, M Guina, T Hakkarainen Materials for Quantum Technology 4 (1), 015401, 2024 | 2 | 2024 |
| Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to low-Q cylindrical nanocavities A Chellu, S Bej, H Wahl, H Kahle, T Uusitalo, R Hytönen, H Rekola, ... arXiv preprint arXiv:2407.11642, 2024 | | 2024 |
| Telecom wavelength single-photon source based on InGaSb/AlGaSb quantum dot technology T Hakkarainen, J Hilska, A Hietalahti, S Ranta, M Peil, E Kantola, A Chellu, ... arXiv preprint arXiv:2404.06083, 2024 | | 2024 |
| Magneto-optical properties of droplet-etched strain-free GaSb/AlGaSb QDs emitting at 1.5 um G Barbieri, JM Llorens Montolio, L Leguay, A Schliwa, A Chellu, J Hilska, ... | | 2024 |
| GaSb-based 1.5 µm quantum dot emitters T Hakkarainen, J Hilska, J Michl, A Chellu, L Leguay, T Huber-Loyola, ... Quantum Computing, Communication, and Simulation IV, PC1291112, 2024 | | 2024 |
| Resonant excitation of 1.5 µm semiconductor quantum dots with VECSEL T Hakkarainen, J Hilska, S Ranta, M Peil, A Chellu, M Guina, A Hietalahti, ... Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII, PC128680D, 2024 | | 2024 |
| Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes L Leguay, A Chellu, J Hilska, L Esperanza, A Schliwa, M Guina, ... Physics and Simulation of Optoelectronic Devices XXXII 12880, 70-74, 2024 | | 2024 |
| Back Cover: Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band (Adv. Quantum Technol. 12/2023) J Michl, G Peniakov, A Pfenning, J Hilska, A Chellu, A Bader, M Guina, ... Advanced Quantum Technologies 6 (12), 2370125, 2023 | | 2023 |
| Ultrafast non-classical light sources based on single InAs/GaAs quantum dot embedded in a hybrid plasmonic nanopillar cavity T Hakkarainen, A Chellu, S Bej, H Hulkkonen, R Hytönen, H Rekola, ... European Quantum Electronics Conference, eg_1_4, 2023 | | 2023 |
| GaSb-based 1.5 μm quantum dot emitters for quantum photonic integration and communication T Hakkarainen, J Hilska, A Chellu, L Leguay, E Luna, A Schliwa, M Guina European Quantum Electronics Conference, eb_p_12, 2023 | | 2023 |
| Properties of GaSb-based 1.5 µm Quantum Dot Emitters T Hakkarainen, J Hilska, A Chellu, L Leguay, E Luna, A Schliwa, M Guina CLEO: Fundamental Science, FF3G. 3, 2023 | | 2023 |
| Ultra-bright non-classical light sources based on single InAs/GaAs quantum dot embedded in a hybrid plasmonic nanopillar cavity A Chellu, S Bej, H Hulkkonen, R Hytönen, H Rekola, T Uusitalo, H Kahle, ... CLEO: Fundamental Science, FF3G. 1, 2023 | | 2023 |
| Optical properties of close-to-surface self-assembled InAs/GaAs quantum dots A Chellu | | 2018 |
| Gallium antimonide quantum dot growth by molecular beam epitaxy DK Saluja, M Sauer, A Bader, J Michl, G Peniakov, A Pfenning, J Hilska, ... | | |
Teemu HakkarainenOptoelectronics Research Centre, Tampere University在 tuni.fi 的电子邮件经过验证
Teemu HakkarainenOptoelectronics Research Centre, Tampere University在 tuni.fi 的电子邮件经过验证
Guina MirceaProfessor at Tampere University, Optoelectronics Research Centre在 tuni.fi 的电子邮件经过验证