| A survey of wide bandgap power semiconductor devices J Millan, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013 | 2452 | 2013 |
| Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects A Matallana, E Ibarra, I López, J Andreu, JI Garate, X Jordà, J Rebollo Renewable and Sustainable Energy Reviews 113, 109264, 2019 | 145 | 2019 |
| Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review M Cabello, V Soler, G Rius, J Montserrat, J Rebollo, P Godignon Materials Science in Semiconductor Processing 78, 22-31, 2018 | 101 | 2018 |
| Long-term reliability of railway power inverters cooled by heat-pipe-based systems X Perpina, X Jorda, M Vellvehi, J Rebollo, M Mermet-Guyennet IEEE transactions on industrial electronics 58 (7), 2662-2672, 2010 | 63 | 2010 |
| Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions X Perpina, JF Serviere, J Urresti-Ibañez, I Cortes, X Jorda, S Hidalgo, ... IEEE Transactions on Industrial Electronics 58 (7), 2706-2714, 2010 | 59 | 2010 |
| High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures J Fernandez, P Godignon, S Berberich, J Rebollo, G Brezeanu, J Millan Solid-State Electronics 39 (9), 1359-1364, 1996 | 48 | 1996 |
| Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Microelectronics Reliability 45 (3-4), 493-498, 2005 | 43 | 2005 |
| IGBT module failure analysis in railway applications X Perpiñà, JF Serviere, X Jordà, A Fauquet, S Hidalgo, J Urresti-Ibañez, ... Microelectronics Reliability 48 (8-9), 1427-1431, 2008 | 39 | 2008 |
| A numerical study of field plate configurations in RF SOI LDMOS transistors I Cortés, J Roig, D Flores, J Urresti, S Hidalgo, J Rebollo Solid-State Electronics 50 (2), 155-163, 2006 | 39 | 2006 |
| Study of novel techniques for reducing self-heating effects in SOI power LDMOS J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán Solid-State Electronics 46 (12), 2123-2133, 2002 | 38 | 2002 |
| First-principles study of -type dopants and their clustering in SiC R Rurali, P Godignon, J Rebollo, E Hernández, P Ordejon Applied physics letters 82 (24), 4298-4300, 2003 | 35 | 2003 |
| Theoretical evidence for the kick-out mechanism for B diffusion in SiC R Rurali, P Godignon, J Rebollo, P Ordejon, E Hernández Applied physics letters 81 (16), 2989-2991, 2002 | 30 | 2002 |
| Layout role in failure physics of IGBTs under overloading clamped inductive turnoff X Perpina, I Cortes, J Urresti-Ibanez, X Jorda, J Rebollo IEEE Transactions on Electron Devices 60 (2), 598-605, 2012 | 29 | 2012 |
| First-principles studies of the diffusion of B impurities and vacancies in SiC R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejón Physical Review B 69 (12), 125203, 2004 | 28 | 2004 |
| First principles studies of neutral vacancies diffusion in SiC R Rurali, E Hernández, P Godignon, J Rebollo, P Ordejón Computational materials science 27 (1-2), 36-42, 2003 | 28 | 2003 |
| Reduction of self-heating effect on SOIM devices J Roig, D Flores, M Vellvehí, J Rebollo, J Millan Microelectronics Reliability 42 (1), 61-66, 2002 | 27 | 2002 |
| High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ... IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017 | 25 | 2017 |
| Solid-state relay solutions for induction cooking applications based on advanced power semiconductor devices M Fernández, X Perpiñà, J Rebollo, M Vellvehi, D Sánchez, T Cabeza, ... IEEE transactions on industrial electronics 66 (3), 1832-1841, 2018 | 24 | 2018 |
| Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors I Cortés, P Fernández-Martínez, D Flores, S Hidalgo, J Rebollo Semiconductor science and technology 23 (9), 095024, 2008 | 24 | 2008 |
| Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors M Cabello, V Soler, J Montserrat, J Rebollo, JM Rafí, P Godignon Applied Physics Letters 111 (4), 2017 | 23 | 2017 |
