关注
Hiroshi KAWARADA
Hiroshi KAWARADA
在 waseda.jp 的电子邮件经过验证
标题
引用次数
引用次数
年份
Hydrogen-terminated diamond surfaces and interfaces
H Kawarada
Surface Science Reports 26 (7), 205-259, 1996
6121996
Superconductivity in diamond thin films well above liquid helium temperature
Y Takano, M Nagao, I Sakaguchi, M Tachiki, T Hatano, K Kobayashi, ...
Applied physics letters 85 (14), 2851-2853, 2004
3622004
Origin of the metallic properties of heavily boron-doped superconducting diamond
T Yokoya, T Nakamura, T Matsushita, T Muro, Y Takano, M Nagao, ...
Nature 438 (7068), 647-650, 2005
3072005
Growth kinetics of 0.5 cm vertically aligned single-walled carbon nanotubes
Zhong, T Iwasaki, J Robertson, H Kawarada
The Journal of Physical Chemistry B 111 (8), 1907-1910, 2007
2222007
Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds
H Kawarada, M Aoki, M Ito
Applied physics letters 65 (12), 1563-1565, 1994
2151994
Large area chemical vapour deposition of diamond particles and films using magneto-microwave plasma
H Kawarada, KS Mar, A Hiraki
Japanese journal of applied physics 26 (6A), L1032, 1987
2021987
CH surface diamond field effect transistors for high temperature (400 C) and high voltage (500 V) operation
H Kawarada, H Tsuboi, T Naruo, T Yamada, D Xu, A Daicho, T Saito, ...
Applied physics letters 105 (1), 2014
2012014
Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface
Y Mori, H Kawarada, A Hiraki
Applied physics letters 58 (9), 940-941, 1991
1781991
Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage
Y Kitabayashi, T Kudo, H Tsuboi, T Yamada, D Xu, M Shibata, ...
IEEE Electron Device Letters 38 (3), 363-366, 2017
1752017
Scanning-tunneling-microscope observation of the homoepitaxial diamond (001) 2× 1 reconstruction observed under atmospheric pressure
H Kawarada, H Sasaki, A Sato
Physical Review B 52 (15), 11351, 1995
1651995
Low temperature synthesis of extremely dense and vertically aligned single-walled carbon nanotubes
G Zhong, T Iwasaki, K Honda, Y Furukawa, I Ohdomari, H Kawarada
Japanese Journal of Applied Physics 44 (4R), 1558, 2005
1632005
Electrolyte‐Solution‐Gate FETs Using Diamond Surface for Biocompatible Ion Sensors
H Kawarada, Y Araki, T Sakai, T Ogawa, H Umezawa
physica status solidi (a) 185 (1), 79-83, 2001
1572001
Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors
TP Chow, I Omura, M Higashiwaki, H Kawarada, V Pala
IEEE Transactions on Electron Devices 64 (3), 856-873, 2017
1562017
Cathodoluminescence and electroluminescence of undoped and boron‐doped diamond formed by plasma chemical vapor deposition
H Kawarada, Y Yokota, Y Mori, K Nishimura, A Hiraki
Journal of applied physics 67 (2), 983-989, 1990
1421990
Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers
H Kawarada, T Suesada, H Nagasawa
Applied physics letters 66 (5), 583-585, 1995
1411995
DNA micropatterning on polycrystalline diamond via one-step direct amination
GJ Zhang, KS Song, Y Nakamura, T Ueno, T Funatsu, I Ohdomari, ...
Langmuir 22 (8), 3728-3734, 2006
1402006
Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamonds
H Kawarada, H Matsuyama, Y Yokota, T Sogi, A Yamaguchi, A Hiraki
Physical Review B 47 (7), 3633, 1993
1371993
High-preformance diamond surface-channel field-effect transistors and their operation mechanism
K Tsugawa, K Kitatani, H Noda, A Hokazono, K Hirose, M Tajima, ...
Diamond and Related Materials 8 (2-5), 927-933, 1999
1301999
High-frequency performance of diamond field-effect transistor
H Taniuchi, H Umezawa, T Arima, M Tachiki, H Kawarada
IEEE Electron Device Letters 22 (8), 390-392, 2001
1292001
Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance
K Hirama, H Takayanagi, S Yamauchi, JH Yang, H Kawarada, ...
Applied Physics Letters 92 (11), 2008
1282008
系统目前无法执行此操作,请稍后再试。
文章 1–20