| Multiple-bit upset in 130 nm CMOS technology AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ... IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006 | 140 | 2006 |
| An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ... IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007 | 70 | 2007 |
| An investigation of dose rate and source dependent effects in 200 GHz SiGe HBTs AK Sutton, APG Prakash, B Jun, E Zhao, M Bellini, J Pellish, ... IEEE Transactions on Nuclear Science 53 (6), 3166-3174, 2006 | 68 | 2006 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 65 | 2017 |
| Proton radiation effects in 4H-SiC diodes and MOS capacitors Z Luo, T Chen, AC Ahyi, AK Sutton, BM Haugerud, JD Cressler, ... IEEE transactions on nuclear science 51 (6), 3748-3752, 2004 | 64 | 2004 |
| Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies JA Pellish, RA Reed, RD Schrimpf, ML Alles, M Varadharajaperumal, ... IEEE Transactions on Nuclear Science 53 (6), 3298-3305, 2006 | 63 | 2006 |
| A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs AK Sutton, BM Haugerud, APG Prakash, B Jun, JD Cressler, CJ Marshall, ... IEEE Transactions on Nuclear Science 52 (6), 2358-2365, 2005 | 63 | 2005 |
| Application of RHBD techniques to SEU hardening of third-generation SiGe HBT logic circuits R Krithivasan, PW Marshall, M Nayeem, AK Sutton, WM Kuo, ... IEEE Transactions on Nuclear Science 53 (6), 3400-3407, 2006 | 61 | 2006 |
| A 2 mW, sub-2 dB noise figure, SiGe low-noise amplifier for X-band high-altitude or space-based radar applications TK Thrivikraman, WML Kuo, JP Comeau, AK Sutton, JD Cressler, ... 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 629-632, 2007 | 53 | 2007 |
| Laser-induced current transients in silicon-germanium HBTs JA Pellish, RA Reed, D McMorrow, JS Melinger, P Jenkins, AK Sutton, ... IEEE Transactions on Nuclear Science 55 (6), 2936-2942, 2008 | 51 | 2008 |
| Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs AK Sutton, BM Haugerud, Y Lu, WML Kuo, JD Cressler, PW Marshall, ... IEEE transactions on nuclear science 51 (6), 3736-3742, 2004 | 51 | 2004 |
| Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ... IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009 | 50 | 2009 |
| The effects of irradiation temperature on the proton response of SiGe HBTs APG Prakash, AK Sutton, RM Diestelhorst, G Espinel, J Andrews, B Jun, ... IEEE Transactions on Nuclear Science 53 (6), 3175-3181, 2006 | 48 | 2006 |
| The effects of radiation on 1/f noise in complementary (npn+ pnp) SiGe HBTs E Zhao, AK Sutton, BM Haugerud, JD Cressler, PW Marshall, RA Reed, ... IEEE transactions on nuclear science 51 (6), 3243-3249, 2004 | 41 | 2004 |
| Proton and gamma radiation effects in a new first-generation SiGe HBT technology BM Haugerud, MM Pratapgarhwala, JP Comeau, AK Sutton, ... Solid-state electronics 50 (2), 181-190, 2006 | 40 | 2006 |
| A generalized SiGe HBT single-event effects model for on-orbit event rate calculations JA Pellish, RA Reed, AK Sutton, RA Weller, MA Carts, PW Marshall, ... IEEE Transactions on Nuclear Science 54 (6), 2322-2329, 2007 | 33 | 2007 |
| Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure J Metcalfe, DE Dorfan, AA Grillo, A Jones, F Martinez-McKinney, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 33 | 2007 |
| The systematic review toolbox C Marshall, A Sutton, H O’Keefe, E Johnson SR Tool Box. URL: http://www. systematicreviewtools. com/[accessed 2021-08-27], 2021 | 32 | 2021 |
| A novel device architecture for SEU mitigation: The inverse-mode cascode SiGe HBT SD Phillips, T Thrivikraman, A Appaswamy, AK Sutton, JD Cressler, ... IEEE transactions on Nuclear Science 56 (6), 3393-3401, 2009 | 31 | 2009 |
| Single event upset mechanisms for low-energy-deposition events in SiGe HBTs EJ Montes, RA Reed, JA Pellish, ML Alles, RD Schrimpf, RA Weller, ... IEEE Transactions on Nuclear Science 55 (3), 1581-1586, 2008 | 31 | 2008 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia Tech在 ece.gatech.edu 的电子邮件经过验证
