| A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins E Abbasian, F Izadinasab, M Gholipour IEEE Transactions on Circuits and Systems I: Regular Papers 69 (4), 1606 - 1616, 2022 | 46 | 2022 |
| A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time A Sachdeva, D Kumar, E Abbasian AEU-International Journal of Electronics and Communications 162, 154565, 2023 | 39 | 2023 |
| A variation-aware design for storage cells using Schottky-barrier-type GNRFETs E Abbasian, M Gholipour Journal of Computational Electronics 19 (3), 987–1001, 2020 | 34 | 2020 |
| Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications E Abbasian, M Gholipour AEU-International Journal of Electronics and Communications 138, 153899, 2021 | 31 | 2021 |
| Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology E Mani, E Abbasian, M Gunasegeran, S Sofimowloodi AEU-International Journal of Electronics and Communications 154, 154308, 2022 | 30 | 2022 |
| Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM E Abbasian, S Birla, M Gholipour Microelectronics Journal 123, 105427, 2022 | 30 | 2022 |
| Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications E Abbasian, M Gholipour International Journal of Circuit Theory and Applications 49 (4), 970-989, 2021 | 28 | 2021 |
| A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology E Abbasian, M Gholipour, S Birla Arabian Journal for Science and Engineering 47 (11), 14543-14559, 2022 | 26 | 2022 |
| A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology E Abbasian, S Birla, M Gholipour Silicon, 1-12, 2021 | 24 | 2021 |
| A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology E Abbasian, E Mani, M Gholipour, M Karamimanesh, M Sahid, A Zaidi Circuits, Systems, and Signal Processing 41, 3081–3105, 2022 | 22 | 2022 |
| A high-performance and energy-efficient ternary multiplier using CNTFETs E Abbasian, S Sofimowloodi Arabian Journal for Science and Engineering 48 (11), 14365-14379, 2023 | 21 | 2023 |
| Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design E Abbasian, M Gholipour, F Izadinasab International Journal of Circuit Theory and Applications 49 (11), 3630-3652, 2021 | 20 | 2021 |
| A high-speed low-energy one-trit ternary multiplier circuit design in CNTFET technology E Abbasian, M Nayeri ECS Journal of Solid State Science and Technology 12 (2), 021004, 2023 | 16 | 2023 |
| A highly stable low-energy 10T SRAM for near-threshold operation E Abbasian IEEE Transactions on Circuits and Systems I: Regular Papers 69 (12), 5195-5205, 2022 | 16 | 2022 |
| Highly-efficient cntfet-based unbalanced ternary logic gates E Abbasian, S Sofimowloodi, A Sachdeva ECS Journal of Solid State Science and Technology 12 (3), 031007, 2023 | 15 | 2023 |
| Design of a highly stable and robust 10T SRAM cell for low-power portable applications E Abbasian, M Gholipour Circuits, Systems, and Signal Processing 41 (10), 5914-5932, 2022 | 15 | 2022 |
| A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications E Abbasian, M Gholipour International Journal of Circuit Theory and Applications, 1-20, 2022 | 15 | 2022 |
| GNRFET-and CNTFET-based designs of highly efficient 22 T unbalanced single-trit ternary multiplier cell E Abbasian, A Aminzadeh, S Taghipour Anvari Arabian Journal for Science and Engineering 48 (11), 15337-15352, 2023 | 14 | 2023 |
| Energy-efficient single-ended read/write 10t near-threshold sram E Abbasian, S Sofimowloodi IEEE Transactions on Circuits and Systems I: Regular Papers 70 (5), 2037-2047, 2023 | 14 | 2023 |
| An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3: 1 multiplexers in 32‐nm GNRFET technology E Abbasian, M Orouji, S Taghipour Anvari, A Asadi, E Mahmoodi International Journal of Circuit Theory and Applications, 2023 | 13 | 2023 |
