| Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions N Parihar, U Sharma, RG Southwick, M Wang, JH Stathis, S Mahapatra IEEE Transactions on Electron Devices 65 (1), 23-30, 2017 | 70 | 2017 |
| A Review of Hot Carrier Degradation in n-Channel MOSFETs--Part I: Physical Mechanism S Mahapatra, U Sharma IEEE Transactions on Electron Devices 67, 2660-2671, 2020 | 48 | 2020 |
| Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of negative bias temperature instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-1.1-XT-1.11, 2017 | 35 | 2017 |
| A SPICE compatible compact model for hot-carrier degradation in MOSFETs under different experimental conditions U Sharma, S Mahapatra IEEE Transactions on Electron Devices 66 (2), 839-846, 2018 | 22 | 2018 |
| Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs N Parihar, RG Southwick, U Sharma, M Wang, JH Stathis, S Mahapatra 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-4.1-2D-4.7, 2017 | 22 | 2017 |
| A Review of Hot Carrier Degradation in n-Channel MOSFETs--Part II: Technology Scaling S Mahapatra, U Sharma IEEE Transactions on Electron Devices 67, 2672-2681, 2020 | 20 | 2020 |
| Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs N Choudhury, U Sharma, H Zhou, RG Southwick, M Wang, S Mahapatra 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 18 | 2020 |
| Modeling of HCD Kinetics for Full VG/VD Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs U Sharma, N Parihar, S Mahapatra IEEE Transactions on Electron Devices, 2019 | 18 | 2019 |
| BTI and HCD Degradation in a Complete 32× 64 bit SRAM Array–including Sense Amplifiers and Write Drivers–under Processor Activity VM van Santen, S Thomann, C Pasupuleti, PR Genssler, N Gangwar, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 17 | 2020 |
| TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space U Sharma, M Duan, H Diwakar, K Thakor, HY Wong, S Motzny, D Dolgos, ... IEEE Transactions on Electron Devices 67 (11), 4749-4756, 2020 | 14 | 2020 |
| Hot Carrier Degradation in Cryo-CMOS W Chakraborty, U Sharma, S Datta, S Mahapatra 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 8 | 2020 |
| CARAT–A reliability analysis framework for BTI-HCD aging in circuits P Gholve, P Chatterjee, C Pasupuleti, H Amrouch, N Gangwar, S Das, ... Solid-State Electronics 201, 108586, 2023 | 7 | 2023 |
| On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs N Parihar, U Sharma, RG Southwick, M Wang, JH Stathis, S Mahapatra 2019 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2019 | 7 | 2019 |
| Modeling of HCD Kinetics Under Full VG – VD Space, Different Experimental Conditions and Across Different Device Architectures U Sharma, S Mahapatra IEEE Journal of the Electron Devices Society 8, 1354-1362, 2020 | 6 | 2020 |
| A Cycle-by-Cycle HCD and BTI Compact Model to Calculate FinFET Based RO Ageing Using SPICE U Sharma, C Pasupuleti, N Gangwar, A Thirunavukkarasu, S Mahapatra 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 6 | 2020 |
| A TCAD framework for assessing NBTI impact under drain bias and self-heating effects in replacement metal gate (RMG) p-FinFETs U Sharma, S Mahapatra 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 3 | 2020 |
| A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD S Mahapatra, H Diwakar, K Thakor, N Choudhury, P Chatterjee, S Kumar, ... IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
| Cool-CMOS Technology for Next Generation High Performance Computing W Chakraborty, KA Aabrar, U Sharma, R Saligram, S Mahapatra, ... 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 2 | 2021 |
| Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs S Kumar, T Samadder, K Thakor, U Sharma, S Mahapatra 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 2 | 2021 |
| A SPICE Compatible Compact Model for Process and Bias Dependence of HCD in HKMG FDSOI MOSFETs U Sharma, S Mahapatra 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 2 | 2019 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)在 ee.iitb.ac.in 的电子邮件经过验证
