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Dr. Vimala P
Dr. Vimala P
Professor, Department of Electronics & Communication, Dayananda Sagar College of Engineering
在 dayanandasagar.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
BREAKDOWN VOLTAGE IMPROVEMENT TECHNIQUES IN AlGaN/GaN HEMTs
P Vimala
Handbook for III-V High Electron Mobility Transistor Technologies, 275-318, 2019
38*2019
Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric
P Vimala, TSA Samuel, D Nirmal, AK Panda
Solid State Electronics Letters 1 (2), 64-72, 2019
322019
TCAD simulation study of single-, double-, and triple-material gate engineered trigate FinFETs
P Vimala, TS Arun Samuel
Semiconductors 54, 501-505, 2020
242020
An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions
C Usha, P Vimala
AEU-International Journal of Electronics and Communications 110, 152877, 2019
222019
Performance analysis of triple material tri gate TFET using 3D analytical modelling and TCAD simulation
S Komalavalli, TSA Samuel, P Vimala
AEU-International Journal of Electronics and Communications 110, 152842, 2019
222019
New analytical model for nanoscale tri-gate SOI MOSFETs including quantum effects
P Vimala, NB Balamurugan
IEEE Journal of the Electron Devices Society 2 (1), 1-7, 2014
222014
TFET Biosensor simulation and analysis for various biomolecules
P Vimala, LL Krishna, SS Sharma
Silicon 14 (13), 7933-7938, 2022
212022
Performance investigation of gate engineered tri-gate SOI TFETs with different high-K dielectric materials for low power applications
P Vimala, TSA Samuel, MK Pandian
Silicon 12 (8), 1819-1829, 2020
192020
Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects
P Vimala, NB Balamurugan
Journal of Semiconductors 34 (11), 114001, 2013
172013
Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET
P Vimala, NRN Kumar
Journal of Nano Research 59, 137-148, 2019
162019
Comparative analysis of various Parameters of Tri-gate MOSFET with high-K spacer
P Vimala, NRN Kumar
Journal of Nano Research 56, 119-130, 2019
162019
A tunneling FET exploiting in various structures and different models: A review
C Usha, P Vimala
Int. Conf. Innov. Inf.Embedded Commun. Syst.(ICIIECS).2015, 1-6, 2015
162015
Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach
P Vimala, NB Balamurugan
Journal of Semiconductors 33 (3), 034001, 2012
162012
Modelling the centroid and charge density in double-gate MOSFETs including quantum effects
P Vimala, NB Balamurugan
International Journal of Electronics 100 (9), 1283-1295, 2012
162012
Investigation of ON current and subthreshold swing of an InSb/Si heterojunction stacked oxide double-gate TFET with graphene nanoribbon
TSA Samuel, M Venkatesh, MK Pandian, P Vimala
Journal of Electronic Materials 50, 7037-7043, 2021
152021
Investigation of cylindrical channel gate all around InGaAs/InP heterojunction heterodielectric tunnel FETs
P Vimala, TS Arun Samuel
Silicon 13 (11), 3899-3907, 2021
152021
A novel 2‑D analytical model for the electrical characteristics of a gate‑all‑around heterojunction tunnel field‑effect transistor including depletion regions
C Usha, P Vimala, TSA Samuel, MK Pandian
Journal of Computational Electronics, 2020
152020
Analytical drain current model for fully depleted surrounding gate TFET
C Usha, P Vimala
Journal of Nano Research 55, 75-81, 2018
152018
Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects
P Vimala, NB Balamurugan
Journal of Semiconductors 35 (3), 034001, 2014
152014
A detailed roadmap from single gate to heterojunction TFET for next generation devices
JE Jeyanthi, TSA Samuel, AS Geege, P Vimala
Silicon 14 (7), 3185-3197, 2022
132022
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