BREAKDOWN VOLTAGE IMPROVEMENT TECHNIQUES IN AlGaN/GaN HEMTs P Vimala Handbook for III-V High Electron Mobility Transistor Technologies, 275-318, 2019 | 38* | 2019 |
Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric P Vimala, TSA Samuel, D Nirmal, AK Panda Solid State Electronics Letters 1 (2), 64-72, 2019 | 32 | 2019 |
TCAD simulation study of single-, double-, and triple-material gate engineered trigate FinFETs P Vimala, TS Arun Samuel Semiconductors 54, 501-505, 2020 | 24 | 2020 |
An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions C Usha, P Vimala AEU-International Journal of Electronics and Communications 110, 152877, 2019 | 22 | 2019 |
Performance analysis of triple material tri gate TFET using 3D analytical modelling and TCAD simulation S Komalavalli, TSA Samuel, P Vimala AEU-International Journal of Electronics and Communications 110, 152842, 2019 | 22 | 2019 |
New analytical model for nanoscale tri-gate SOI MOSFETs including quantum effects P Vimala, NB Balamurugan IEEE Journal of the Electron Devices Society 2 (1), 1-7, 2014 | 22 | 2014 |
TFET Biosensor simulation and analysis for various biomolecules P Vimala, LL Krishna, SS Sharma Silicon 14 (13), 7933-7938, 2022 | 21 | 2022 |
Performance investigation of gate engineered tri-gate SOI TFETs with different high-K dielectric materials for low power applications P Vimala, TSA Samuel, MK Pandian Silicon 12 (8), 1819-1829, 2020 | 19 | 2020 |
Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects P Vimala, NB Balamurugan Journal of Semiconductors 34 (11), 114001, 2013 | 17 | 2013 |
Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET P Vimala, NRN Kumar Journal of Nano Research 59, 137-148, 2019 | 16 | 2019 |
Comparative analysis of various Parameters of Tri-gate MOSFET with high-K spacer P Vimala, NRN Kumar Journal of Nano Research 56, 119-130, 2019 | 16 | 2019 |
A tunneling FET exploiting in various structures and different models: A review C Usha, P Vimala Int. Conf. Innov. Inf.Embedded Commun. Syst.(ICIIECS).2015, 1-6, 2015 | 16 | 2015 |
Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach P Vimala, NB Balamurugan Journal of Semiconductors 33 (3), 034001, 2012 | 16 | 2012 |
Modelling the centroid and charge density in double-gate MOSFETs including quantum effects P Vimala, NB Balamurugan International Journal of Electronics 100 (9), 1283-1295, 2012 | 16 | 2012 |
Investigation of ON current and subthreshold swing of an InSb/Si heterojunction stacked oxide double-gate TFET with graphene nanoribbon TSA Samuel, M Venkatesh, MK Pandian, P Vimala Journal of Electronic Materials 50, 7037-7043, 2021 | 15 | 2021 |
Investigation of cylindrical channel gate all around InGaAs/InP heterojunction heterodielectric tunnel FETs P Vimala, TS Arun Samuel Silicon 13 (11), 3899-3907, 2021 | 15 | 2021 |
A novel 2‑D analytical model for the electrical characteristics of a gate‑all‑around heterojunction tunnel field‑effect transistor including depletion regions C Usha, P Vimala, TSA Samuel, MK Pandian Journal of Computational Electronics, 2020 | 15 | 2020 |
Analytical drain current model for fully depleted surrounding gate TFET C Usha, P Vimala Journal of Nano Research 55, 75-81, 2018 | 15 | 2018 |
Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects P Vimala, NB Balamurugan Journal of Semiconductors 35 (3), 034001, 2014 | 15 | 2014 |
A detailed roadmap from single gate to heterojunction TFET for next generation devices JE Jeyanthi, TSA Samuel, AS Geege, P Vimala Silicon 14 (7), 3185-3197, 2022 | 13 | 2022 |